2001. 2. 24
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SEMICONDUCTOR
TECHNICAL DATA
KTC3911S
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 3
LOW NOISE AMPLIFIER APPLICATION.
FEATURES
High Voltage : V
CEO
=120V.
Excellent h
FE
Linearity
: h
FE
(0.1mA)/h
FE
(2mA)=0.95(Typ.).
High h
FE
: h
FE
=200 700.
Low Noise : NF=1dB(Typ.), 10dB(Max.).
Complementary to KTA1517S.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Note : h
FE
Classification GR(G):200 400 BL(L):350 700
h Rank
Type Name
Marking
Lot No.
AD
FE
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=120V, I
E
=0
-
-
0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
0.1
A
DC Current Gain
h
FE
(Note)
V
CE
=6V, I
C
=2mA
200
-
700
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=10mA, I
B
=1mA
-
-
0.3
V
Transition Frequency
f
T
V
CE
=6V, I
C
=1mA
-
100
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
4.0
-
pF
Noise Figure
NF
V
CE
=6V, I
C
=0.1mA
f=1kHz, Rg=10k
-
1.0
10
dB
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
120
V
Collector-Emitter Voltage
V
CEO
120
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
100
mA
Base Current
I
B
20
mA
Collector Power Dissipation
P
C
150
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
2001. 2. 24
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KTC3911S
Revision No : 3
h PARAMETER
1
500
100
30
1
COLLECTOR-EMITTER VOLTAGE V (V)
CE
h PARAMETER - V
I - V
CE
COLLECTOR EMITTER VOLTAGE V (V)
0
2
4
4
C
COLLECTOR CURRENT I (mA)
0
C - V
CB
COLLECTOR-BASE VOLTAGE V (V)
0
ob
1
COLLECTOR OUTPUT CAPACITANCE
C
CE
6
8
10
1
2
3
CE
10
3
3
10
30
100
300
COMMON EMITTER
I =-1mA
f=270Hz
Ta=25 C
E
h
fe
ie
h
re
h
oe
h
(
xk
)
(
x10 )
(
x
)
-5
ob
CB
C (pF)
10
20
30
40
50
60
70
80
3
5
10
30
50
f=1MHz
I =0
Ta=25 C
E
Ta=-25 C
Ta=25 C
Ta=100 C
COLLECTOR CURRENT I (mA)
DC CURRENT GAIN h
0.3
10
50
30
100
1
FE
500
300
1k
COMMON EMITTER
100
V =6V
3
10
CE
30
C
400
h - I
FE
C
COMMON EMITTER
Ta=25 C
0
I =1
A
B
2
3
4
5
6
7
8
9
10
COLLECTOR EMITTER SATURATION
100
COLLECTOR CURRENT I (mA)
0.3
0.01
0.05
0.03
0.1
1
3
10
30
C
CE(sat)
0.5
0.3
1
V - I
CE(sat)
C
400
VOLTAGE V (V)
Ta=100 C
25
-25
COMMON EMITTER
I /I =10
C B
0.4
BASE-EMITTER VOLTAGE V (V)
COLLECTOR CURRENT I (mA)
0
0
40
80
0.2
120
160
200
BE
0.8
0.6
1.2
1.0
I - V
C
BE
C
COMMON EMITTER
V =6V
CE
Ta=1
00
C
Ta
=25
C
T
a=-2
5
C
2001. 2. 24
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KTC3911S
Revision No : 3
10
100
10k
1k
100
10
1k
10k
100k
COMMON EMITTER
V =6V
f=1kHz
CE
12
10
8
6
4
3
2
NF
=1dB
NF
=1dB
2
3
4
6
8
10
12
10
h PARAMETER
1
100
-50
EMITTER CURRENT I (
A)
E
E
h PARAMETER - I
-100
-300
-1000 -3000
-10000
3
5
30
50
300
500
1k
-10
h
fe
h
(xk
)
ie
h (
x10
)
re
-5
h (
x
)
oe
COMMON
EMITTER
V =6V
f=270Hz
CE
AMBIENT TEMPERATURE Ta ( C)
P - Ta
75
COLLECTOR POWER DISSIPATION P (mW)
25
0
300
200
100
400
50
150
100
125
C
C
0
10
100k
10k
1k
100
10
100
1k
10k
C
g
NF - R , I
C
g
NF - R , I
SIGNAL SOURCE RESISTANCE R (
)
g
SIGNAL SOURCE RESISTANCE R (
)
g
COLLECTOR CURRENT I (
A)
C
COLLECTOR CURRENT I (
A)
C
COMMON EMITTER
CE
f=10Hz
V =6V
12
10
8
6
4
3
2
NF=1d
B
NF=1d
B
2
3
4
6
8
10
12
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