2001. 6. 29
1/3
SEMICONDUCTOR
TECHNICAL DATA
KTC3542T
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
RELAY DRIVERS, LAMP DRIVERS,
MOTOR DRIVERS, STROBES APPLICATION.
FEATURES
Adoption of MBIT Processes.
Large Current Capacitance.
Low Collector-to-Emitter Saturation Voltage.
High-Speed Switching.
Ultrasmall Package Facilitates Miniaturization in end Products.
High Allowable Power Dissipation.
Complementary to KTA1542T.
MAXIMUM RATING (Ta=25 )
DIM MILLIMETERS
A
B
D
E
TSM
2.9 0.2
1.6+0.2/-0.1
0.70 0.05
0.4 0.1
2.8+0.2/-0.3
1.9 0.2
0.95
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
C
F
G
H
I
J
K
0.60
L
0.55
A
F
G
G
D
K
B
E
C
L
H
J
J
I
2
1
3
+
_
+
_
+
_
+
_
+
_
1. EMITTER
2. BASE
3. COLLECTOR
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
40
V
Collector-Emitter Voltage
V
CEO
30
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
DC
I
C
3
A
Pulse
I
CP
5
Base Current
I
B
600
mA
Collector Power Dissipation
P
C
*
0.9
W
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
* Package mounted on a ceramic board (600
0.8 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
I
CBO
V
CB
=30V, I
E
=0
-
-
0.1
A
Emitter Cut-off Current
I
EBO
V
EB
=4V, I
C
=0
-
-
0.1
A
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=10 A, I
E
=0
40
-
-
V
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=1mA, I
B
=0
30
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=10 A, I
C
=0
5
-
-
V
Collector-Emitter Saturation Voltage
V
CE(sat)1
I
C
=1.5A, I
B
=30mA
-
120
180
mV
V
CE(sat)2
I
C
=1.5A, I
B
=75mA
-
105
155
mV
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=1.5A, I
B
=30mA
-
0.83
1.2
V
DC Current Gain
h
FE
V
CE
=2V, I
C
=500mA
200
-
560
Transition Frequency
f
T
V
CE
=10V, I
C
=500mA
-
450
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, f=1MHz
-
20
-
pF
Swiitching
Time
Turn-On Time
t
on
-
30
-
nS
Storage Time
t
stg
-
300
-
Fall Time
t
f
-
15
-
Type Name
Marking
Lot No.
H H
I
B1
B2
I
INPUT
OUTPUT
50
24
100
F
PW=20
s
DC 1%
470
F
R
V
B
R
BE
V =-5V
CC
V =12V
20I =-20I =I =500mA
B1
B2 C
<
=
2001. 6. 29
2/3
KTC3542T
Revision No : 0
V - I
C
COLLECTOR CURRENT I (A)
C
COLLECTOR CURRENT I (A)
COLLECTOR-EMITTER VOLTAGE V (mV)
0
CE
0
I - V
C
CE
200
400
600
800
1K
0.4
0.8
1.2
1.6
2.0
CE(sat)
C
DC CURRENT GAIN h
FE
COLLECTOR CURRENT I (A)
C
CE(sat)
COLLECTOR-EMITTER SATURATION
I =0mA
B
2.0mA
30mA
40mA
4.0mA
6.0mA
8.0mA
10mA
20
mA
50mA
VOLTAGE V (V)
Ta=-25 C
Ta=25 C
Ta=75 C
Ta=75
C
I /I =50
C B
I /I =50
C B
I /I =20
C B
Ta=7
5 C
Ta=2
5 C
Ta=
-25
C
Ta=
25
C
Ta=
-25
C
Ta=-25 C
V =2V
CE
Ta=25 C
Ta=75 C
h - I
FE
C
0.1
10
0.3
0.5
1
3
5
0.01
0.03
0.001
0.1
0.3
1
3
10
0.003
0.005
0.01
0.03
0.05
0.1
0.3
0.5
1
V - I
C
COLLECTOR CURRENT I (A)
BE(sat)
C
BE(sat)
BASE-EMITTER SATURATION
VOLTAGE V (mV)
0.01
0.03
0.1
0.3
1
3
10
10
1K
30
50
100
300
500
0.01
0.03
0.1
0.3
1
3
10
V - I
C
COLLECTOR CURRENT I (A)
CE(sat)
C
CE(sat)
COLLECTOR-EMITTER SATURATION
VOLTAGE V (V)
0.01
0.03
0.01
0.1
0.3
1
3
10
0.03
0.05
0.1
0.3
0.5
1
3
5
10
T
a=75
C
V =2V
CE
T
a=-
25
C
Ta=
25
C
C
COLLECTOR CURRENT I (A)
BASE-EMITTER VOLTAGE V (V)
0
BE
0
I - V
C
BE
0.2
0.4
0.6
0.8
1.0
1.2
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
2001. 6. 29
3/3
KTC3542T
Revision No : 0
COLLECTOR OUTPUT CAPACITANCE
ob
COLLECTOR-BASE VOLTAGE V (V)
CB
C (pF)
C - V
ob
CB
TRANSITION FREQUENCY f (MHz)
T
COLLECTOR CURRENT I (mA)
C
f - I
T
C
10
30
100
1K
3K
300
f=1MHz
V = 10V
CE
1
3
5
3 0
10
I MAX.(PULSED)
C
I MAX
(CONTIN-
UOUS)
C
100
mS*
10mS*
1m
S*
500
S
*
100
S*
DC
OP
ER
AT
IO
N
MOUNTED ON A CERAMIC BOARD
SINGLE NONREPETITIVE
PULSE Ta=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
*
(600mm 0.8mm)
2
C
COLLECTOR POWER DISSIPATION
P (W)
AMBIENT TEMPERATURE Ta ( C)
0
0
Pc - Ta
20
40
60
80
100
120
140 160
0.2
0.4
0.6
0.8
1.0
1.2
MOUNTED ON A
CERAMIC BOARD
(600mm 0.8mm)
2
10
1K
30
50
100
300
500
10
30
50
70
100
COLLECTOR-EMITTER VOLTAGE V (V)
SAFE OPERATING AREA
COLLECTOR CURRENT I (A)
0.1
0.01
C
CE
0.3
1
3
10
30
0.5
5
50
0.03
0.05
0.1
0.3
0.5
1
3
5
10
PDF 
ZIP