2002. 1. 24
1/4
SEMICONDUCTOR
TECHNICAL DATA
KRC857E~KRC859E
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
High Packing Density.
DIM
MILLIMETERS
A
A1
B1
C
TES6
1.6 0.05
1.0 0.05
1.6 0.05
1.2 0.05
0.50
0.2 0.05
0.5 0.05
0.12 0.05
B
D
H
J
B1
B
D
A
A1
C
C
J
H
1
2
3
6
4
P
P
P
5
5
+
_
+
_
+
_
+
_
+
_
+
_
+
_
1. Q COMMON (EMITTER)
4. Q COMMON (EMITTER)
3. Q OUT (COLLECTOR)
5. Q IN (BASE)
6. Q OUT (COLLECTOR)
1
2
2. Q IN (BASE)
1
1
2
2
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25 )
BIAS RESISTOR VALUES
R1
R2
COMMON
OUT
IN
MARK SPEC
Type Name
1
2
3
6
5
4
1
Q1
2
3
6
5
4
Q2
EQUIVALENT CIRCUIT (TOP VIEW)
TYPE NO.
R1(k )
R2(k )
KRC857E
10
47
KRC858E
22
47
KRC859E
47
22
CHARACTERISTIC
SYMBOL
RATING
UNIT
Output Voltage
KRC857E 859E
V
O
50
V
Input Voltage
KRC857E
V
I
30, -6
V
KRC858E
40, -7
KRC859E
40,-15
Output Current
KRC857E 859E
I
O
100
mA
Power Dissipation
P
D
*
200
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
TYPE
KRC857E
KRC858E
KRC859E
MARK
NH
NI
NJ
* Total Rating.
Marking