1999. 6. 9
1/4
SEMICONDUCTOR
TECHNICAL DATA
KRC407E~KRC409E
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 0
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
FEATURES
With Built-in Bias Resistors
Simplify Circuit Design
Reduce a Quantity of Parts and Manufacturing Process
High Packing Density.
DIM
MILLIMETERS
A
B
D
E
ESM
1.60 0.10
0.85 0.10
0.70 0.10
0.27+0.10/-0.05
1.60 0.10
1.00 0.10
0.50
0.13 0.05
C
G
H
J
1
3
2
E
B
D
A
G
H
C
J
1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
+
_
+
_
+
_
+
_
+_
+
_
EQUIVALENT CIRCUIT
BIAS RESISTOR VALUES
MAXIMUM RATING (Ta=25 )
MARK SPEC
R1
R2
COMMON
OUT
IN
Type Name
Marking
TYPE NO.
R1(k )
R2(k )
KRC407E
10
47
KRC408E
22
47
KRC409E
47
22
CHARACTERISTIC
SYMBOL
RATING
UNIT
Output Voltage
KRC407E 409E
V
O
50
V
Input Voltage
KRC407E
V
I
30, -6
V
KRC408E
40, -7
KRC409E
40,-15
Output Current
KRC407E 409E
I
O
100
mA
Power Dissipation
P
D
100
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
TYPE
KRC407E
KRC408E
KRC409E
MARK
NH
NI
NJ