2002. 7. 9
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SEMICONDUCTOR
TECHNICAL DATA
KRA316E~KRA322E
EPITAXIAL PLANAR PNP TRANSISTOR
Revision No : 1
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION
FEATURES
With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
DIM
MILLIMETERS
A
B
D
E
ESM
1.60 0.10
0.85 0.10
0.70 0.10
0.27+0.10/-0.05
1.60 0.10
1.00 0.10
0.50
0.13 0.05
C
G
H
J
1
3
2
E
B
D
A
G
H
C
J
1. EMITTER
2. BASE
3. COLLECTOR
+
_
+
_
+
_
+
_
+_
+
_
EQUIVALENT CIRCUIT
MAXIMUM RATING (Ta=25 )
MARK SPEC
R1
R2
COMMON(+)
OUT
IN
Type Name
Marking
TYPE NO.
R1(k )
R2(k )
KRA316E
1
10
KRA317E
2.2
2.2
KRA318E
2.2
10
KRA319E
4.7
10
KRA320E
10
4.7
KRA321E
47
10
KRA322E
100
100
CHARACTERISTIC
SYMBOL
RATING
UNIT
Output Voltage
KRA316E 322E
V
O
-50
V
Input Voltage
KRA316E
V
I
-10, 5
V
KRA317E
-12, 10
KRA318E
-12, 5
KRA319E
-20, 7
KRA320E
-30, 10
KRA321E
-40, 15
KRA322E
-40, 10
Output Current
KRA316E 322E
I
O
-100
mA
Power Dissipation
P
D
100
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55 150
TYPE
KRA316E KRA317E KRA318E KRA319E KRA320E KRA321E KRA322E
MARK
P2
P4
P5
P6
P7
P8
P9