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Электронный компонент: KDV269E

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CATV TUNING.
FEATURES
High Capacitance Ratio : C2V/C25V=11.5(Typ.)
Low Series Resistance : r
S
=0.55 (Typ.)
Excellent C-V Characteristics, and Small Tracking Error.
Useful for Small Size Tuner.
MAXIMUM RATING (Ta=25 )
ESC
DIM
MILLIMETERS
A
B
C
D
E
1.60 0.10
1.20 0.10
0.80 0.10
0.30 0.05
0.60 0.10
CATHODE MARK
D
C
B
A
1
2
E
1. ANODE
2. CATHODE
F
0.13 0.05
F
+
_
+
_
+
_
+
_
+
_
+
_
2000. 3. 24
1/2
SEMICONDUCTOR
TECHNICAL DATA
KDV269E
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
Revision No : 0
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
RATING
UNIT
Reverse Voltage
V
R
34
V
Peak Reverse Voltage
V
RM
36 (R
L
=10k )
V
Junction Temperature
T
j
125
Storage Temperature Range
T
stg
-55 125
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Reverse Voltage
V
R
I
R
=1 A
34
-
-
V
Reverse Current
I
R
V
R
=28V
-
-
10
nA
Capacitance
C
2V
V
R
=2V, f=1MHz
29
31.5
34
pF
Capacitance
C
25V
V
R
=25V, f=1MHz
2.5
2.75
2.9
pF
Capacitance Ratio
C
2V
/C
25V
11.0
11.5
-
-
C
25V
/C
28V
1.03
1.05
-
Series Resistance
r
S
V
R
=5V, f=470MHz
-
0.55
0.7
Note : Available in matched group for capacitance to 2.0%.
C(Max.)-C(Min.)
C(Min.)
0.02
Type Name
Marking
R
U
(V
R
=2~25V)
KDV269E
2/2
2000. 3. 24
Revision No : 0
-40
AMBIENT TEMPERATURE Ta ( C)
C - Ta
R
REVERSE VOLTAGE V (V)
CAPACITANCE C (pF)
C - V
R
0
10
500
100
50
Ta=25 C
-2
CAPACITANCE CHANGE RATIO C (%)
V
V
10
20
30
f=1MHz
REVERSE CURRENT I (A)
R
0.1p
0
REVERSE VOLTAGE V (V)
R
I - V
R
R
8
1p
10p
100p
1000p
Ta=75 C
Ta=50 C
Ta=25 C
16
24
32
r - V
R
REVERSE VOLTAGE V (V)
1
3
10
30
0
SERIES RESISTANCE r (
)
R
5
f=470MHz
Ta=25 C
s
s
0.2
0.4
0.6
0.8
1.0
-20
0
20
40
60
80
-1
0
1
2
3
f=1MHz
V =2V
R
10V
20V
25V