1998. 6. 15
1/1
SEMICONDUCTOR
TECHNICAL DATA
BSS64
EPITAXIAL PLANAR NPN TRANSISTOR
Revision No : 1
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
MAXIMUM RATING (Ta=25 )
DIM
MILLIMETERS
1. EMITTER
2. BASE
3. COLLECTOR
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25 )
Type Name
Marking
Lot No.
U6
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
V
CBO
120
V
Collector-Emitter Voltage
V
CEO
80
V
Emitter-Base Voltage
V
EBO
5
V
Collector Current
I
C
100
mA
Emitter Current
I
E
-100
mA
Collector Power Dissipation
P
C
200
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-65 150
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector-Emitter Breakdown Voltage
V
(BR)CEO
I
C
=4mA, I
B
=0
80
-
-
V
Collector-Base Breakdown Voltage
V
(BR)CBO
I
C
=100 A, I
E
=0
120
-
-
V
Emitter-Base Breakdown Voltage
V
(BR)EBO
I
E
=100 A, I
C
=0
5.0
-
-
V
Collector Cut-off Current
I
CBO
V
CB
=90V, I
E
=0
-
-
100
nA
V
CB
=90V, I
E
=0, Ta=150
-
-
50
A
Emitter Cut-off Current
I
EBO
V
EB
=5V, I
C
=0
-
-
200
nA
DC Current Gain
h
FE
V
CE
=1V, I
C
=1mA
-
60
-
V
CE
=1V, I
C
=4mA
20
-
-
V
CE
=1V, I
C
=10mA
-
80
-
V
CE
=1V, I
C
=20mA
-
55
-
Base-Emitter Saturation Voltage
V
BE(sat)
I
C
=4mA, I
B
=0.4mA
-
-
1.2
V
Collector-Emitter Saturation Voltage
V
CE(sat)
I
C
=4mA, I
B
=0.4mA
-
-
0.15
V
I
C
=50mA, I
B
=15mA
-
-
0.2
Transition Frequency
f
T
V
CE
=10V, I
C
=4mA, f=100MHz
60
-
-
MHz
Collector Output Capacitance
C
ob
V
CB
=10V, I
E
=0, f=1MHz
-
-
5.0
pF
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