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Электронный компонент: FBAT54CDW

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-06C Plastic-Encapsulate Diodes
FBAT54CDW
SURFACE MOUNT
SCHOTTKY BARRIER DIODE ARRAYS

DESCRIPTION
Silicon epitaxial planar
PN Junction Guard Ring for Schottky Diode

FEATURES
Low Forward Voltage Drop
Fast Switching SCHOTTKY DIODE

APPLICATION
Ultra high speed switching, rectifiers
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
Maximum Ratings @T
A
=25
Parameter Symbol
Limits
Unit
Peak Repetitive reverse voltage
DC Blocking Voltage
V
RM
V
R
30
V
Average Rectified Output Current
I
O
100
mA
Power Dissipation
P
D
150
mW
Junction temperature
T
J
125
Storage temperature range
T
STG
-65-125
ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Reverse breakdown voltage
V
(BR)
I
R
= 100
A
30 V
Reverse voltage leakage current
I
R
V
R
=25V
2
u
A
Forward voltage
V
F
I
F
=0.1mA
I
F
=1mA
I
F
=10mA
I
F
=30mA
I
F
=100mA

240
320
400
500
1000
mV
Total capacitance
C
T
V
R
=1V,f=1MHz
10
pF
Reverse recovery time
t
r r
I
F
=10mA, I
R
=10mA~1mA
R
L
=100
5
nS
WBFBP-06C
(220.5)
unit: mm
FBAT54CDW
Marking:KL7
Typical Characteristics











































Min.
Max.
Min.
Max.
A
0.450
0.550
0.018
0.022
A1
0.000
0.100
0.000
0.004
b
0.150
0.250
0.006
0.010
D
1.900
2.100
0.075
0.083
E
1.900
2.100
0.075
0.083
D1
E1
e
L
k
z
0.032 REF.
0.500 REF.
0.020 REF.
Symbol
Dimensions In Millimeters
Dimensions In Inches
0.650 TYP.
0.026 TYP.
0.420 REF.
0.017 REF.
0.800 REF.
0.400 REF.
0.016 REF.
0.350 REF.
0.014 REF.
APPLICATION CIRCUITS
Bridge rectifiers