JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
3DK2222A
TRANSISTOR(NPN )
FEATURE
Power dissipation
P
CM
: 0.625 W(Tamb=25
)
MAXIMUM RATINGS* T
A
=25
unless otherwise noted
Symbol Parameter Value
Units
V
CBO
Collector-Base Voltage
75 V
V
CEO
Collector-Emitter Voltage
40 V
V
EBO
Emitter-Base Voltage
6 V
I
C
Collector Current -Continuous
600
mA
P
D
Total Device Dissipation
625
mW
T
J
Junction Temperature
150
T
stg
Junction and Storage Temperature
-55-150
*These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.
ELECTRICAL CHARACTERISTICS(Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= 10uA , I
E
=0 75
V
Collector-emitter breakdown voltage
V(BR)
CEO
I
C
= 10 mA , I
B
=0 40
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= 10uA, I
C
=0 6
V
Collector cut-off current
I
CBO
V
CB
= 60 V , I
E
=0
10
nA
Collector cut-off current
I
CEX
V
CE
= 60 V , V
EB(OFF)
=3V
10
nA
Emitter cut-off current
I
EBO
V
EB
= 3 V , I
C
=0
10
nA
h
FE(1)
V
CE
=10 V, I
C
= 150mA
100
300
h
FE(2)
V
CE
=10 V, I
C
= 0.1mA
40
DC current gain
h
FE(3)
V
CE
=10 V, I
C
= 500mA
42
V
CE(sat)(1)
I
C
= 500 mA, I
B
= 50 mA
0.6
V
Collector-emitter saturation voltage
V
CE(sat)(2)
I
C
= 150 mA, I
B
= 15 mA
0.3
V
Base-emitter saturation voltage
V
BE(sat)
I
C
= 500 mA, I
B
= 50 mA
1.2
V
Storage time
t
stg
V
CC
=30V, I
C
=150mA, I
B1
=I
B2
=15mA 225
ns
Transition frequency
f
T
V
CE
= 20 V, I
C
= 20mA,
f =
100MHz
300 MHz
CLASSIFICATION OF h
FE(1)
Rank
L H
Range
100-200 200-300
1
2
3
TO-92
1.
EMITTER
2.
BASE
3. COLLECTOR
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