JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD
SOT-23 Plastic-Encapsulate Transistors
3DK2222A
TRANSISTOR ( NPN )
FEATURES
Epitaxial planar die construction
Complementary PNP Type available(MMBT2907ALT1)
MARKING: 1P
1
MAXIMUM RATINGS* T
A
=
25
unless otherwise noted
Symbol Parameter Value
Units
V
CBO
Collector-Base Voltage
75
V
V
CEO
Collector-Emitter Voltage
40
V
V
EBO
Emitter-Base Voltage
6
V
I
C
Collector Current -Continuous
600
mA
P
C
Collector Dissipation
300
mW
T
J
, T
stg
Junction and Storage Temperature
-55to+150
ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
I
C
= 10
A
I
E
=0
75
V
Collector-emitter breakdown voltage
V
(BR)CEO
I
C
= 10mA
I
B
=0
40
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=10
A
I
C
=0
6
V
Collector cut-off current
I
CBO
V
CB
=70 V , I
E
=0
0.1
A
Collector cut-off current
I
CEX
V
CE
=60V , V
BE(off)
=3V
0.1
A
Emitter cut-off current
I
EBO
V
EB
= 3V , I
C
=0 0.1
A
H
FE(1)
V
CE
=10V, I
C
= 150mA
100
300
H
FE(2)
V
CE
=10V, I
C
=
0.1mA
40
DC current gain
H
FE(3)
V
CE
=10V, I
C
=
500mA
42
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=500 mA, I
B
= 50mA
I
C
=150 mA, I
B
=15mA
0.6
0.3
V
Base-emitter saturation voltage
V
BE
(sat) I
C
=500 mA, I
B
= 50mA
1.2
V
Transition frequency
f
T
V
CE
=20V, I
C
= 20mA
f=
100MHz
300
MHz
Delay time
t
d
10
nS
Rise time
t
r
V
CC
=30V, V
BE(off)
=-0.5V
I
C
=150mA , I
B1
= 15mA
25
nS
Storage time
t
S
225
nS
Fall time
t
f
V
CC
=30V, I
C
=150mA
I
B1
=-I
B2
=15mA
60
nS
SOT-23
1. BASE
2.EMITTER
3.COLLECTOR
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