JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220 Plastic-Encapsulate Transistors
3DD13005
TRANSISTOR
NPN
FEATURES
Power dissipation
P
CM
: 1.5 W
Tamb=25
Collector current
I
CM:
4 A
Collector-base voltage
V
(BR)CBO
: 700 V
Operating and storage junction temperature range
T
J
T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= 1000 A
I
E
=0
700
V
Collector-emitter breakdown voltage
V(BR)
CEO
Ic= 10 mA
I
B
=0
400
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= 1000 A
I
C
=0
9
V
Collector cut-off current
I
CBO
V
CB
= 700 V
I
E
=0
1000
A
Collector cut-off current
I
CEO
V
CE
= 400 V
I
B
=0
100
A
Emitter cut-off current
I
EBO
V
EB
= 9 V
I
C
=0
1000
A
DC current gain
h
FE
V
CE
= 5 V, I
C
= 1000mA
10
40
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=2000mA,I
B
=500 mA
0.6
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
=2000mA, I
B
= 500mA
1.6
V
Transition Frequency
f
T
V
CE
=10 V, IC=500mA
f = 1MHz
5
MHz
Fall time
t
f
0.9
s
Storage time
t
s
I
B1
=-I
B2
=0.4A, I
C
=2A
V
CC
=120V
4
s
CLASSIFICATION OF h
FE
Rank
Range
10-15
15-20
20-25
25-30
30-35
35-40
1 2 3
TO
--
220
1.BASE
2.COLLECTOR
3.EMITTER
D
C1
C
A
A1
b
b1
E
F
E
1
L
L
1
e
e1
TO-220-3L PACKAGE OUTLINE DIMENSIONS
Symbol
A
A1
b
b1
c
c1
D
E
E1
e
e1
F
L
L1
Min
4.470
2.520
0.710
1.170
0.310
1.710
10.010
8.500
12.060
4.980
2.590
13.400
3.560
3.790
Max
4.670
2.820
0.910
1.370
0.530
1.370
10.310
8.900
12.460
5.180
2.890
13.800
3.960
3.890
Min
1.176
0.099
0.028
0.046
0.012
0.046
0.394
0.335
0.475
0.196
0.102
0.528
0.140
0.149
Max
0.184
0.111
0.036
0.054
0.021
0.054
0.406
0.350
0.491
0.204
0.114
0.543
0.156
0.153
Dimensions In Millimeters
Dimensions In Inches
0.100TYP
2.540TYP
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