JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-126 Plastic-Encapsulate Transistors
3DD13003
TRANSISTOR
NPN
FEATURES
Power dissipation
P
CM
: 1.25 W
Tamb=25
Collector current
I
CM
: 1.5 A
Collector-base voltage
V
(BR)CBO
: 700 V
Operating and storage junction temperature range
T
J
T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS
Tamb=25
unless otherwise specified
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)
CBO
Ic= 1000
A
I
E
=0
700
V
Collector-emitter breakdown voltage
V(BR)
CEO
Ic= 10 mA
I
B
=0
400
V
Emitter-base breakdown voltage
V(BR)
EBO
I
E
= 1000
A
I
C
=0
9
V
Collector cut-off current
I
CBO
V
CB
= 700 V
I
E
=0
1000
A
Collector cut-off current
I
CEO
V
CE
= 400 V
I
B
=0
500
A
Emitter cut-off current
I
EBO
V
EB
= 9 V
I
C
=0
1000
A
H
FE
1
V
CE
= 2 V, I
C
= 0.5 A
8
40
DC current gain
H
FE
2
V
CE
= 10 V, I
C
= 0.5 mA
5
Collector-emitter saturation voltage
V
CE
(sat)
I
C
=1000mA,I
B
= 250 mA
1
V
Base-emitter saturation voltage
V
BE
(sat)
I
C
=1000mA, I
B
= 250mA
1.2
V
Base-emitter voltage
V
BE
I
E
= 2000 mA
3
V
Transition frequency
f
T
V
CE
=10V,Ic=100mA
f =1MHz
5
MHz
Fall time
t
f
0.5
s
Storage time
t
s
I
C
=1A, I
B1
=-I
B2
=0.2A
V
CC
=100V
2.5
s
CLASSIFICATION OF H
FE(1)
Rank
Range
8-15
15-20
20-25
25-30
30-35
35-40
1 2 3
TO
--
126
1.BASE
2.COLLECTOR
3.EMITTER
D
C
A
A1
b
b1
E
P
L
L
1
e
e1
TO-126 PACKAGE OUTLINE DIMENSIONS
Symbol
A
A1
b
b1
c
D
E
e
e1
L
L1
P
Min
2.500
1.100
0.660
1.170
0.450
7.400
10.600
4.480
15.300
2.100
3.900
3.000
Max
2.900
1.500
0.860
1.370
0.600
7.800
11.000
4.680
15.700
2.300
4.100
3.200
Min
0.098
0.043
0.026
0.046
0.018
0.291
0.417
0.176
0.602
0.083
0.154
0.118
Max
0.114
0.059
0.034
0.054
0.024
0.307
0.433
0.184
0.618
0.091
0.161
0.126
Dimensions In Millimeters
Dimensions In Inches
0.090TYP
2.290TYP
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