JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92MOD Plastic-Encapsulate Transistors
2SC3243
TRANSISTOR (NPN)
FEATURES
Power dissipation
P
CM
: 0.9 W (Tamb=25
)
Collector current
I
CM
: 1 A
Collector-base voltage
V
(BR)CBO
: 60 V
Operating and storage junction temperature range
T
J
, T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=
10
A, I
E
=0
60
V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic=
2
mA, I
B
=0
60
V
Emitter-base breakdown voltage
V
(BR)EBO
I
E
=
10
A, I
C
=0
6
V
Collector cut-off current
I
CBO
V
CB
=
50
V, I
E
=0
0.2
A
Emitter cut-off current
I
EBO
V
EB
=
4
V, I
C
=0
0.2
A
DC current gain
h
FE(1)
V
CE
=4V, I
C
=
100
mA
55
300
Collector-emitter saturation voltage
V
CE(sat)
I
C
=
500
mA, I
B
=
25
mA
0.3
V
Transition frequency
f
T
V
CE
=
2
V, I
C
=
10
mA
80 MHz
Collector output capacitance
C
ob
V
CB
=
10
V, I
E
=0, f=
1
MHz
25 pF
CLASSIFICATION OF h
FE(1)
Rank
C D E
Range
55-110 90-180 150-300
Marking
TO-92MOD
1.
EMITTER
2.
COLLECTOR
3.
BASE
123
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