JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92S
Plastic-Encapsulate Transistors
2SA608S
TRANSISTOR (PNP)
FEATURES
Power dissipation
P
CM
: 300 mW (Tamb=25
)
Collector current
I
CM
: -100 mA
Collector-base voltage
V
(BR)CBO
: -40 V
Operating and storage junction temperature range
T
J
, T
stg
: -55
to +150
ELECTRICAL CHARACTERISTICS (Tamb=25
unless otherwise specified)
Parameter
Symbol
Test conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V
(BR)CBO
Ic=-100
A, I
E
=0
-40 V
Collector-emitter breakdown voltage
V
(BR)CEO
Ic=-1mA,
I
B
=0 -30
V
Emitter-Base breakdown voltage
V
(BR)EBO
I
E
=-100
A, I
C
=0
-5 V
Collector cut-off current
I
CBO
V
CB
=-25V, I
E
=0
-1
A
Emitter cut-off current
I
EBO
V
EB
=-4V, I
C
=0
-1
A
DC current gain
h
FE
V
CE
=-6V, I
C
=-1mA 60 560
Collector-emitter saturation voltage
V
CE
(sat) I
C
=-50mA, I
B
=-5mA
-0.5
V
Transition frequency
f
T
V
CE
=-6V, I
C
=-10mA 180
MHz
Collector output capacitance
Cob V
CB
=-6V,
f=1MHz 7
pF
CLASSIFICATION OF h
FE
Rank D
E
F
G
Range
60-120 100-200 160-320 280-560
TO-92S
1. EMITTER
2. COLLECTOR
3. BASE
123
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