2000 IXYS All rights reserved
1 - 4
Symbol
Test Conditions Maximum Ratings
VUB 120
VUB160
V
RRM
1200/1600
1200/1600
V
I
dAVM
T
C
= 75
C, sinusoidal 120
121
157
A
I
FSM
T
VJ
= 45
C,
t = 10 ms, V
R
= 0 V
650
850
A
T
VJ
= 150
C,
t = 10 ms, V
R
= 0 V
580
760
A
I
2
t
T
VJ
= 45
C,
t = 10 ms, V
R
= 0 V
2110
3610
A
T
VJ
= 150
C,
t = 10 ms, V
R
= 0V
1680
2880
A
P
tot
T
C
= 25
C per diode
130
160
W
V
CES
T
VJ
= 25
C to 150
C
1200
1200
V
V
GE
Continuous
20
20
V
I
C25
T
C
= 25
C, DC
100
150
A
I
C75
T
C
= 75
C, DC
71
106
A
T
C
= 75
C, d = 0.5
56
85
A
I
CM
t
p
= Pulse width limited by T
VJM
200
300
A
P
tot
T
C
= 25
C
400
600
W
V
RRM
1200
V
I
FAV
T
C
= 75
C, rectangular d = 0.5
25
A
I
FRMS
T
C
= 75
C, rectangular d = 0.5
39
A
I
FRM
T
C
= 75
C, t
P
= 10 s, f = 5 kHz
tbd
A
I
FSM
T
VJ
= 45
C,
t = 10 ms
200
A
T
VJ
= 150
C,
t = 10 ms
180
A
P
tot
T
C
= 25
C
100
W
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+125
C
V
ISOL
50/60 Hz
t = 1 min
3000
V~
I
ISOL
1 mA
t = 1 s
3600
V~
M
d
Mounting torque
(M5)
2-2.5
Nm
(10-32 unf)
18-22
lb.in.
d
S
Creep distance on surface
12.7
mm
d
A
Strike distance in air
9.4
mm
a
Maximum allowable acceleration
50
m/s
2
Weight
typ.
80
g
V
RRM
Type
V
RRM
Type
V
V
1200
VUB 120-12 NO1 1600 VUB 120-16 NO1
1200
VUB 160-12 NO1 1600 VUB 160-16 NO1
IGBT
Fast Recovery Diode
Module
Rectifier Diodes
Features
q
Soldering connections for PCB
mounting
q
Isolation voltage 3600 V~
q
Ultrafast diode
q
Convenient package outline
q
UL registered E 72873
q
Case and potting UL94 V-0
q
Thermistor
Applications
q
Drive Inverters with brake system
Advantages
q
2 functions in one package
q
Easy to mount with two screws
q
Suitable for wave soldering
q
High temperature and power cycling
capability
Dimensions in mm (1 mm = 0.0394")
VUB 120 / 160
Preliminary Data
0 31
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.
V
RRM
= 1200/1600 V
I
dAVM
= 121/157 A
Three Phase Rectifier Bridge
with IGBT and Fast Recovery Diode
for Braking System
2000 IXYS All rights reserved
2 - 4
I
R
V
R
= V
RRM
,
T
VJ
= 25
C
0.3
mA
V
R
= V
RRM
,
T
VJ
= 150
C
5
mA
V
F
I
F
= 150 A,
T
VJ
= 25
C
VUB 120
1.59
V
VUB 160
1.49
V
V
T0
For power-loss calculations only
VUB 120
0.80
V
VUB 160
0.75
V
r
T
T
VJ
= 150
C
VUB 120
6.1
m
W
VUB 160
4.6
m
W
R
thJC
per diode
VUB 120
1.0 K/W
VUB 160
0.8 K/W
R
thJH
VUB 120
1.3 K/W
VUB 160
1.1 K/W
V
BR(CES)
V
GS
= 0 V, I
C
= 3 mA
1200
V
V
GE(th)
I
C
= 20 mA
VUB 120
5
8
V
I
C
= 30 mA
VUB 160
5
8
V
I
CES
T
VJ
=
25
C,
V
CE
= 1200 V
VUB 120
0.8
mA
VUB 160
1.2
mA
T
VJ
=
125
C, V
CE
= 0,8
z
V
CES
VUB 120
3
mA
VUB 160
4.5
mA
V
CEsat
V
GE
= 15 V, I
C
= 50 A
VUB 120
2.9
V
V
GE
= 15 V, I
C
= 75 A
VUB 160
2.9
V
t
SC
V
GE
= 15 V, V
CE
= 720 V, T
VJ
=
125
C,
(SCSOA)
R
G
= 11
W,
non repetitive
VUB 120
10
m
s
R
G
= 7
W
, non repetitive
VUB 160
10
m
s
RBSOA
V
GE
= 15 V, V
CE
= 960 V, T
VJ
=
125
C,
Clamped Inductive load, L = 100
m
H
R
G
= 11
W
VUB 120
100
A
R
G
= 7
W
VUB 160
150
A
C
ies
V
CE
= 25 V, f = 1 MHz, V
GE
= 0 V
VUB 120
9
nF
VUB 160
13.5
nF
t
d(on)
300
ns
t
d(off)
350
ns
E
on
VUB 120
12
mJ
VUB 160
18
mJ
E
off
VUB 120
16
mJ
VUB 160
24
mJ
R
thJC
VUB 120
0.32 K/W
VUB 160
0.21 K/W
R
thJH
VUB 120
0.45 K/W
VUB 160
0.30 K/W
I
R
V
R
= V
RRM
,
T
VJ
= 25
C
0.75
mA
V
R
= 0,8
V
CES
, T
VJ
= 125
C
4
7
mA
V
F
I
F
= 30 A,
T
VJ
= 25
C
2.55
V
V
T0
For power-loss calculations only
1.65
V
r
T
T
VJ
= 150
C
18.2
m
W
I
RM
I
F
= 30 A, -di
F
/dt = 240 A/
m
s, V
R
= 540 V
16
18
A
t
rr
I
F
= 1 A, -di
F
/dt = 100 A/
m
s, V
R
= 30 V
40
60
ns
R
thJC
1.2 K/W
R
thJH
1.6 K/W
R
25
Siemens S 891/2,2/+9
2.2
k
W
Symbol
Test Conditions
Characteristic Values
(T
VJ
= 25
C, unless otherwise specified)
min.
typ.
max.
Rectifier Diodes
Fast Recovery Diode
V
CE
= 720 V, I
C
= 50/75 A
V
GE
= 15 V, R
G
= 11/7
W
Inductive load; L = 100
m
H
T
VJ
=
125
C
IGBT
VUB 120 / 160
Rectifier Diodes
NTC
2000 IXYS All rights reserved
3 - 4
R
G
0.9
1.0
1.1
1.2
1.3
0
40
80
120
160
0
20
40
60
80
100
120
140
0.0001
0.001
0.01
0.1
1
10
0
50
100
150
200
-50 -25
0
25 50 75 100 125 150
0.50
0.75
1.00
1.25
1.50
0
2
4
6
8
0
50
100
150
200
W
I
C
norm.
V
A
T
C
I
d(AV)M
C
V
CE(sat)
T
VJ
I
C
V
CE
A
0
20
40
60
80
100
120
0
50
100
150
200
250
300
P
tot
I
d(AV)M
A
W
T
A
V
GE
= 15V
T
VJ
= 25C
I
C
= 50A
E
off
t
fi
s
T
VJ
=125
C
I
C
= 25A
norm. to 4.7
W
0
40
80
120
160
C
R
thKA
[K/W]
0.1
0.3
0.5
0.7
1
1.5
3
V
GE
= 11V
V
GE
= 9V
A
D=0.1
D=0.2
D=0.4
C
I
C
= 25A
I
C
= 100A
E
off
t
fi
A
norm.
E
off
t
fi
E
off
t
fi
t
p
T
V
J
=125
C
R
G
= 4.7
W
norm.
V
GE
= 15V
T
K
= 80
C
D=0.5
under evaluation
under evaluation
V
GE
= 13V
D=0.3
I
C
VUB 120
D=0.7
Fig. 3 Output characteristics for
Fig. 4 Temperature dependence of
Fig. 5 Turn-off energy per pulse and
braking (IGBT)
output saturation voltage,
fall time in collector current,
normalized (IGBT)
normalized (IGBT)
VUB 120
Fig. 6 Collector current dependence on pulse width and duty cycle (IGBT)
Fig.7 Turn-off energy per pulse and
fall time on R
G
(IGBT)
Fig. 1 Power dissipation versus direct output current and ambient temperature
Fig. 2 Maximum forward current
(Rectifier bridge)
versus case temperature
(Rectifier bridge)
2000 IXYS All rights reserved
4 - 4
1
10
100
1000
0
1
2
3
4
5
6
0
1
2
3
4
0
10
20
30
40
50
-di
F
/dt
0.001
0.01
0.1
1
10
100
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
100
200
300
400
500
600
0
10
20
30
40
50
0
100
200
300
400
500
600
0.0
0.2
0.4
0.6
0.8
1.0
0
40
80
120
160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
400
800
1200
0.1
1
10
100
K
f
Z
thJK
t
-di
F
/dt
T
VJ
C
t
rr
m
s
0
100
200
300
400
500
600
0
10
20
30
40
50
60
70
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
FR
m
C
V
CE
I
C
A
V
F
I
F
I
RM
A
Q
R
V
A/
m
s
V
per Rectifier
Diode
Fast Diode
IGBT
I
F
= 30 A
I
F
= 60 A
I
F
= 30 A
I
F
= 15 A
V
-di
F
/dt
A/
m
s
s
V
FR
t
FR
t
FR
m
s
Q
r
T
V
J
=100
C
V
R
= 540 V
T
V
J
=125
C
R
G
= 11
W
A
max.
I
RM
T
V
J
=100
C
V
R
= 540 V
-di
F
/dt
typ.
max.
T
V
J
=100
C
V
R
= 540 V
T
V
J
=150
C
T
V
J
=25
C
typ.
max.
T
V
J
=125
C
I
F
= 30A
typ.
A/
m
s
I
F
= 30 A
I
F
= 60 A
I
F
= 30 A
I
F
= 15 A
I
F
= 30 A
I
F
= 60 A
I
F
= 30 A
I
F
= 15 A
200
A/
m
s
VUB 120
K/W
Fig. 8 Reverse baised safe operation
Fig. 9 Forward current versus
Fig. 10 Recovery charge versus
area (IGBT)
voltage drop (Fast Diode)
-di
F
/dt (Fast Diode)
Fig.11 Peak forward voltage and
Fig.12 Recovery time versus -di
F
/dt
Fig.13 Peak reverse current versus
recovery time versus -di
F
/dt
(Fast Diode)
-di
F
/dt (Fast Diode)
(Fast Diode)
Fig.14 Dynamic parameters versus
Fig.15 Transient thermal impedance junction to heatsink Z
thJK
junction temperature (Fast Diode)
VUB 120
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