2000 IXYS All rights reserved
1 - 2
N-Channel Enhancement Mode
Preliminary Data
D = Drain
S = Source
KS = Kelvin Source G = Gate
D
S
KS
G
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
100
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 10 k
W
100
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
S
= 25
C
590
A
I
D80
T
S
= 80
C
440
A
I
DM
T
S
= 25
C
pulse width limited by T
JM
2360
A
P
D
T
C
= 25
C
2200
W
T
S
= 25
C
1470
W
T
J
-40 ...+150
C
T
JM
150
C
T
stg
-40 ... +125
C
V
ISOL
50/60 Hz
t = 1 min
3000
V~
I
ISOL
1 mA
t = 1 s
3600
M
d
Mounting torque (M6)
2.25-2.75/20-25 Nm/lb.in.
Terminal connection torque (M5)
2.5-3.7/22-33 Nm/lb.in.
Weight
typical including screws
250
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 6 mA
100
V
V
GS(th)
V
DS
= 20 V, I
D
= 110 mA
3
6
V
I
GSS
V
GS
=
20 V DC, V
DS
= 0
500
nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25
C
3 mA
V
GS
= 0 V
T
J
= 125
C
12 mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
2.1 m
W
Pulse test, t
300
m
s, duty cycle d
2 %
Features
q
International standard package
q
Direct Copper Bonded Al
2
O
3
ceramic
base plate
q
Isolation voltage 3600 V~
q
Low R
DS(on)
HDMOS
TM
process
q
Low package inductance for high
speed switching
q
Kelvin Source contact for easy drive
Applications
q
AC motor speed control for electric
vehicles
q
DC servo and robot drives
q
Switched-mode and resonant-mode
power supplies
q
DC choppers
Advantages
q
Easy to mount
q
Space and weight savings
q
High power density
q
Low losses
VMO 550-01F
V
DSS
= 100 V
I
D25
= 590 A
R
DS(on)
= 2.1 m
W
IXYS reserves the right to change limits, test conditions and dimensions.
E 72873
750
HiPerFET
TM
MOSFET Module
D
S
G
KS
2000 IXYS All rights reserved
2 - 2
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
pulsed
330
S
C
iss
50
nF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
17.6
nF
C
rss
8.8
nF
t
d(on)
250
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
500
ns
t
d(off)
R
G
= 2
W
(external)
800
ns
t
f
200
ns
Q
g
2000
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
385
nC
Q
gd
940
nC
R
thJC
0.057 K/W
R
thJS
with 30
m
m heat transfer paste
0.085 K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
590
A
I
SM
Repetitive; pulse width limited by T
JM
2360
A
V
SD
I
F
= I
S
; V
GS
= 0 V,
0.9
1.2
V
Pulse test, t
300
m
s, duty cycle d
2 %
t
rr
I
F
= I
S
, -di/dt = 1000 A/
m
s, V
DS
= 0.5 V
DSS
300
ns
VMO 550-01F
IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Dimensions in mm (1 mm = 0.0394")
5
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