1999 IXYS All rights reserved
C3 - 18
C3
D
S
G
KS
Symbol
Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150C
200
V
V
DGR
T
J
= 25
C to 150C; R
GS
= 10 k
200
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
500
A
I
D80
T
C
= 80
C
370
A
I
DM
T
C
= 25
C, t
P
= 10
s
2000
A
P
D
T
C
= 25
C
2200
W
T
J
-40 ...+150
C
T
JM
150
C
T
stg
-40 ... +125
C
V
ISOL
50/60 Hz
t = 1 min
3000
V~
I
ISOL
1 mA
t = 1 s
3600
V~
M
d
Mounting torque (M6)
2.25-2.75/20-25 Nm/lb.in.
Terminal connection torque (M5)
2.5-3.7/22-33 Nm/lb.in.
Weight
typical including screws
250
g
V
DSS
= 200 V
I
D25
= 500 A
R
DS(on) typ
= 3.5 mW
N-Channel Enhancement Mode
Features
l
International standard package
l
Direct Copper Bonded Al
2
O
3
ceramic
base plate
l
Low R
DS(on)
HDMOS
TM
process
l
Low package inductance for high
speed switching
l
Kelvin Source contact for easy drive
Applications
l
AC motor speed control for electric
vehicles
l
DC servo and robot drives
l
Switched-mode and resonant-mode
power supplies
l
DC choppers
Advantages
l
Easy to mount
l
Space and weight savings
l
High power density
l
Low losses
D = Drain
S =
Source
KS = Kelvin Source
G =
Gate
D
S
KS
G
Symbol
Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ. max.
V
DSS
V
GS
= 0 V, I
D
= 12 mA
200
V
V
GS(th)
V
DS
= 20 V, I
D
= 44 mA
2
4
V
I
GSS
V
GS
=
20 V DC, V
DS
= 0
500 nA
I
DSS
V
DS
= 0.8 V
DSS
, V
GS
= 0 V T
J
= 25
C
2.4 mA
T
J
= 125
C
12 mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
3.5
4.2 m
Pulse test, t
300
s, duty cycle d
2 %
MegaMOS
TM
FET
Module
VMO 500-02F
Additional current limitation by external leads
E 72873
918
IXYS reserves the right to change limits, test conditions and dimensions.
1999 IXYS All rights reserved
C3 - 19
C3
IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Symbol
Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ. max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
pulsed
420
S
C
iss
57
nF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
10
nF
C
rss
3.7
nF
t
d(on)
210
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
500
ns
t
d(off)
R
G
= 1
900
ns
t
f
350
ns
Q
g
2500
nC
Q
gs
V
GS
= 10 V, V
DS
= 100 V, I
D
= 200 A
450
nC
Q
gd
1200
nC
R
thJC
0.057 K/W
R
thJK
with 30
m heat transfer paste
0.085
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Conditions
min.
typ. max.
I
S
V
GS
= 0, T
C
= 25
C, T
J
= T
JM
500
A
I
SM
Repetitive; pulse width limited by T
JM
2000
A
V
SD
I
F
= 500 A; V
GS
= 0 V,
1
1.25
V
Pulse test, t
300
s, duty cycle d
2 %
t
rr
I
F
= I
S
, -di/dt = 1200 A/
s, V
DS
= 100 V
600
ns
VMO 500-02F
Additional current limitation by external leads
Dimensions in mm (1 mm = 0.0394")
5
1999 IXYS All rights reserved
C3 - 20
C3
VMO 500-02F
Fig. 1 Typical output characteristics I
D
= f (V
DS
)
Fig. 2 Typical transfer characteristics I
D
= f (V
GS
)
0
1
2
3
4
5
6
0
250
500
750
1000
1250
5 V
6 V
7 V
8 V
9 V
V
DS
I
D
A
V
A
I
D
0
2
4
6
8
0
250
500
750
1000
1250
V
DS
= 30 V
V
V
GS
T
J
= 125C
T
J
= 25C
0
25
50
75
100
125
150
0
50
100
150
200
250
300
350
400
450
500
550
T
C
T
J
C
A
-50
-25
0
25
50
75
100
125
150
0.6
0.7
0.8
0.9
1.0
1.1
1.2
V
DSS
norm.
C
V
GS(th)
-50
-25
0
25
50
75
100
125
150
0.5
1.0
1.5
2.0
2.5
norm.
C
0
200
400
600
800
1000
1200
0.8
0.9
1.0
1.1
1.2
1.3
1.4
R
DS(on)
T
J
V
GS
= 15 V
V
DSS
V
GS
= 10 V
A
I
D
norm.
R
DS(on)
I
D
V
GS
= 10 V
V
GS(th)
I
D
= 250 A
VMO500-02F
Fig. 5 Continuous drain current I
D
= f (T
C
)
Fig. 6 V
DSS
= f (T
J
), V
GS(th)
= f (T
J
), normalized
Fig. 3 Typical R
DS(on)
= f (I
D
), normalized
Fig. 4 R
DS(on)
= f (T
J
), normalized
1999 IXYS All rights reserved
C3 - 21
C3
VMO 500-02F
0.001
0.01
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
100
1000
1
10
100
1000
10000
Z
thJC
D=0.01
D=0.02
D=0.05
D= 0.1
D= 0.2
D = 0.5
s
K/W
0
500
1000
1500
2000
2500
3000
0
3
6
9
12
15
V
GS
V
I
D
A
Limited by R
DS(on)
t = 100 ms
t = 10 ms
V
DS
V
0.0001
0.001
0.01
0.1
1
0
400
800
1200
t
t
p
s
0.00
0.25
0.50
0.75
1.00
1.25
1.50
0
200
400
600
800
1000
1200
T
J
= 25C
T
J
= 125C
V
A
0
5
10
15
20
25
1
10
100
1000
nF
V
SD
I
S
C
oss
V
DS
V
C
I
D
= 210 A
I
G
= 12 mA
V
DS
= 100 V
Q
g
nC
t = 1 ms
non-repetitive
T
J
= 150C
T
C
= 25C
C
iss
C
rss
I
d
A
D = single pulse
0
D= 0.1
D= 0.2
D= 0.3
D= 0.4
D= 0.5
D= 0.7
T
C
= 80
C
t = 10 s
VMO500-02F
Fig. 7 Typical turn-on gate charge characteristics
Fig. 8 Forward Bias Safe Operating Area, I
D
= f (V
DS
)
p
Fig. 11 Drain current versus pulse width and
Fig. 12 Transient thermal resistance Z
thJC
= f (t
p
)
duty cycle
Fig. 9 Typical capacitances C = f (V
DS
), f = 1 MHz
Fig. 10 Typical forward characteristics of reverse
diode, I
S
= f (V
SD
)
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