2000 IXYS All rights reserved
1 - 4
Symbol
Conditions
Maximum Ratings
V
DSS
T
J
= 25C to 150C
200
V
V
DGR
T
J
= 25C to 150C; R
GS
= 10 k
W
200
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25C
84
A
I
D80
T
C
= 80C
63
A
I
DM
T
C
= 25C, t
p
= 10 s, pulse width limited by T
JM
335
A
P
tot
T
C
= 25C
370
W
T
J
-40 ... +150
C
T
JM
150
C
T
stg
-40 ... +125
C
V
ISOL
50/60 Hz
t = 1 min
3000
V~
I
ISOL
1 mA
t = 1 s
3600
V~
M
d
Mounting torque (M5 or 10-32 UNF)
2.25-2.75/20-25 Nm/lb.in.
Terminal connection torque (M5)
2.5-4/22-35 Nm/lb.in.
Weight
Typical including screws
130
g
Phaseleg Configuration
High dv/dt, Low t
rr
, HDMOS
TM
Family
Features
Two MOSFET's in phaseleg config.
International standard package
Direct copper bonded Al
2
O
3
ceramic
base plate
Isolation voltage 3600 V~
Low R
DS(on)
HDMOS
TM
process
Low package inductance for high
speed switching
Kelvin source contact
Applications
Switched-mode and resonant-mode
power supplies
Uninterruptible power supplies (UPS)
Advantages
Easy to mount with two screws
Space and weight savings
High power density
Low losses
11
8
2
1
3
10
9
Data per MOSFET unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
943
Dual Power
HiPerFET
TM
Module
V
DSS
= 200 V
I
D25
= 84 A
R
DS(on)
= 25 m
W
VMM 85-02F
Symbol
Conditions
Characteristic Values
(T
J
= 25C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V
200
V
V
GS(th)
V
DS
= V
GS
, I
D
= 8 mA
2
4
V
I
GSS
V
GS
=
20 V DC, V
DS
= 0
500 nA
I
DSS
V
DS
= V
DSS
,
V
GS
= 0 V, T
J
= 25C
400 A
V
DS
= 0.8 V
DSS
, V
GS
= 0 V, T
J
= 125C
2 mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
20
25 m
W
Pulse test, t
300 s, duty cycle d
2%
1 = Drain 1, Source 2
2 = Source 1
3 = Drain 2
8 = Gate 2
9 = Kelvin Source 2
10 = Kelvin Source 1
11 = Gate 1
3
2
1
11
10
8
9
2000 IXYS All rights reserved
2 - 4
VMM 85-02F
IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
Symbol
Conditions
Characteristic Values
(T
J
= 25C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
pulsed
40
60
S
C
iss
9600 15000 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
1800
4500
pF
C
rss
620
1500
pF
t
d(on)
70
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
80
ns
t
d(off)
R
G
= 1
W
(External), resistive load
200
ns
t
f
100
ns
Q
g
380
450 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
70
110 nC
Q
gd
190
230 nC
R
thJC
0.33 K/W
R
thCH
heatsink compound applied
0.2
K/W
d
S
Creepage distance on surface
12.7
mm
d
A
Strike distance through air
9.6
mm
a
Allowable acceleration
50 m/s
2
Source-Drain Diode
Characteristic Values
(T
J
= 25C, unless otherwise specified)
Symbol
Conditions
min.
typ.
max.
I
S
V
GS
= 0 V
84
A
I
SM
Repetitive; pulse width limited by T
JM
335
A
V
SD
I
F
= I
S
; V
GS
= 0 V,
0.9
1.2
V
Pulse test, t
300 s, duty cycle d
2%
t
rr
I
F
= I
S
, -di/dt = 100 A/s, V
DS
= 100 V, V
GS
= 0 V
200
400
ns
Dimensions in mm (1 mm = 0.0394")
2000 IXYS All rights reserved
3 - 4
VMM 85-02F
0
1
2
3
4
5
6
0
25
50
75
100
125
150
175
200
5 V
V
DS
I
D
V
A
I
D
8 V
6 V
7 V
9 V
0
1
2
3
4
5
6
7
8
0
25
50
75
100
125
150
175
200
V
V
GS
T
J
= 125
C
T
J
= 25C
0
25
50
75
100
125
150
0
20
40
60
80
100
C
T
C
I
D
A
-50
-25
0
25
50
75
100
125
150
0.7
0.8
0.9
1.0
1.1
1.2
V
DSS
C
V
GS(th)
-50
-25
0
25
50
75
100
125
150
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50
I
D
= 45 A
norm.
C
0
25
50
75
100
125
150
0.8
0.9
1.0
1.1
1.2
1.3
1.4
R
DS(on)
norm.
R
DS(on)
T
J
A
I
D
V
DSS
A
T
J
V
GS
= 10 V
V
DS
= 30 V
V
GS
= 10 V
V
GS
= 15 V
norm.
V
GS(th)
normalized to
R
DS(on)
@0.5 I
D25
, V
GS
= 10V
Fig. 1 Typical output characteristics I
D
= f (V
DS
)
Fig. 2 Typical transfer characteristics I
D
= f (V
GS
)
Fig. 3 Typical normalized R
DS(on)
= f (I
D
)
Fig. 4 Typical normalized R
DS(on)
= f (T
J
)
Fig. 5 Continuous drain current I
D
= f (T
C
)
Fig. 6 Typical normalized V
DSS
= f (T
J
), V
GS(th)
= f (T
J
)
2000 IXYS All rights reserved
4 - 4
VMM 85-02F
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
D=0.02
D=0.05
D = single pulse
D = 0.1
D = 0.2
D = 0.5
s
K/W
Z
thJK
0
100
200
300
400
0
2
4
6
8
10
Q
g
nC
V
DS
= 100 V
I
D
= 40 A
I
G
= 2 mA
V
GS
V
I
D
1
10
100
1000
1
10
100
1000
Limited by R
DS(on)
t = 100 ms
t = 10 ms
t = 1 ms
V
DS
V
0
20
40
60
80
100
120
0
20
40
60
80
100
t
s
I
D
g
fs
A
0.00
0.25
0.50
0.75
1.00
1.25
1.50
0
50
100
150
200
V
A
0
5
10
15
20
25
0.1
1
10
100
nF
V
SD
I
S
Ciss
V
DS
V
C
A
0
non-repetitive
T
J
= 150C
T
K
= 25C
Crss
Coss
T
J
= 25C
T
J
= 125C
Fig. 7 Typical turn-on gate charge characteristics
Fig. 8 Forward Safe Operating Area, I
D
= f (V
DS
)
Fig. 9 Typical capacitances C = f (V
DS
), f = 1 MHz
Fig. 10 Typical forward characteristics of reverse
diode, I
S
= f (V
SD
)
Fig. 11 Typical transconductance g
fs
= f (I
D
)
Fig. 12 Transient thermal resistance Z
thJK
= f (t
p
)
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