IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
1 - 2
1998 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
835
N-Channel Enhancement Mode
Symbol
Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
70
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 10 k
70
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
620
A
I
D80
T
C
= 80
C
460
A
I
DM
T
C
= 25
C; t
p
= 10 s
2480
A
P
D
T
C
= 25
C
1350
W
T
J
-40 ...+150
C
T
JM
150
C
T
stg
-40 ... +125
C
V
ISOL
50/60 Hz
t = 1 min
3000
V~
I
ISOL
1 mA
t = 1 s
3600
M
d
Mounting torque (M6)
2.25-2.75/20-25 Nm/lb.in.
Terminal connection torque (M5)
2.5-3.7/22-33 Nm/lb.in.
Weight
typical including screws
250
g
Symbol
Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 10 mA
70
V
V
GS(th)
I
D
= 30 mA
2
4
V
I
GSS
V
GS
=
20 V DC, V
DS
= 0
500
nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25
C
1 mA
V
GS
= 0 V
T
J
= 125
C
4 mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
1.6
2.1 m
Pulse test, t
300
s, duty cycle d
2 %
Features
q
International standard package
q
Direct Copper Bonded Al
2
O
3
ceramic
base plate
q
Low R
DS(on)
HDMOS
TM
process
q
Low package inductance for high
speed switching
q
Kelvin Source contact for easy drive
Applications
q
Motor speed control for electric
vehicles
q
DC servo and robot drives
q
Switched-mode and resonant-mode
power supplies
q
DC choppers
Advantages
q
Easy to mount
q
Space and weight savings
q
High power density
q
Low losses
Additional current limitation by external leads
Dual Power
HiPerFET
TM
Module
with Schottky Diode
11
2
1
3
10
1
2
3
11
10
V
DSS
= 70 V
I
D25
= 620 A
R
DS(on)
typ.
= 1.6 m
VMD 600-007S
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
2 - 2
1998 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
835
Symbol
Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
pulsed
300
S
C
iss
35
nF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
15
nF
C
rss
10
nF
t
d(on)
150
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
300
ns
t
d(off)
R
G
= 1
500
ns
t
f
200
ns
Q
g
1900
nC
Q
gs
V
GS
= 10 V, V
DS
= 35 V, I
D
= 300 A
240
nC
Q
gd
950
nC
R
thJC
0.09 K/W
R
thJS
with heat transfer paste
0.13
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Conditions
min.
typ.
max.
I
S
V
GS
= 0 V, T
C
= 25C, T
J
= T
JM
620
A
I
SM
2480
A
V
SD
I
F
= 600 A, V
GS
= 0 V,
1.2
1.4
V
Pulse test, t
300
s, duty cycle d
2 %
t
rr
I
F
= 600 A, -di/dt = 700 A/
s, V
DS
= 25 V
300
ns
VMD 600-007S
Dimensions in mm (1 mm = 0.0394")
Additional current limitation by external leads
Free-Wheeling Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Conditions
min.
typ.
max.
I
F25
V
GS
= 0 V, T
C
= 25C, T
J
= T
JM
650
A
I
F80
500
A
V
F
I
F
= 300 A, V
GS
= 0 V,
0.9
V
Pulse test, t
300
s, duty cycle d
2 %
I
R
V
R
= 0.8 V
DSS
, T
J
= 25C
3 mA
T
J
= 125C
60 mA
R
thJC
0.19 K/W
R
thJS
with heat transfer paste
0.28
K/W
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