2003 IXYS All rights reserved
1 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
V
RSM
V
RRM
Types
V
V
900
800
VBO 55-08NO7
1300
1200
VBO 55-12NO7
1500
1400
VBO 55-14NO7
1700
1600
VBO 55-16NO7
1900
1800
VBO 55-18NO7
Symbol
Conditions
Maximum Ratings
I
dAV
T
C
= 100C, module
55
A
I
FSM
T
VJ
= 45C;
t = 10 ms (50 Hz), sine
750
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
820
A
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
600
A
V
R
= 0
t = 8.3 ms (60 Hz), sine
700
A
I
2
t
T
VJ
= 45C
t = 10 ms (50 Hz), sine
2800
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
2820
A
2
s
T
VJ
= T
VJM
t = 10 ms (50 Hz), sine
2200
A
2
s
V
R
= 0
t = 8.3 ms (60 Hz), sine
2250
A
2
s
T
VJ
-40...+150
C
T
VJM
150
C
T
stg
-40...+125
C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
I
ISOL
1 mA
t = 1 s
3000
V~
M
d
Mounting torque (M5)
5 15%
Nm
(10-32 UNF)
44 15%
lb.in.
Weight
typ.
110
g
I
dAV
= 55 A
V
RRM
= 800-1600 V
Symbol
Conditions
Characteristic Values
I
R
V
R
= V
RRM
;
T
VJ
= 25C
0.5
mA
V
R
= V
RRM
;
T
VJ
= T
VJM
10
mA
V
F
I
F
= 150 A;
T
VJ
= 25C
1.6
V
V
T0
For power-loss calculations only
0.8
V
r
T
T
VJ
= T
VJM
6
m
R
thJC
per diode; DC current
1.3
K/W
per module
0.325
K/W
R
thJK
per diode, DC current
1.6
K/W
per module
0.4
K/W
d
S
Creeping distance on surface
16.1
mm
d
A
Creepage distance in air
7.5
mm
a
Max. allowable acceleration
50
m/s
2
Features
Package with copper base plate
Isolation voltage 3000 V~
Planar passivated chips
Low forward voltage drop
" fast-on power terminals
Applications
Supplies for DC power equipment
Input rectifiers for PWM inverter
Battery DC power supplies
Field supply for DC motors
Advantages
Easy to mount with two screws
Space and weight savings
Improved temperature and power
cycling capability
Small and light weight
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747 refer to a single diode unless otherwise stated.
Single Phase
Rectifier Bridge
A
+
B
-
C~
E~
316
VBO 55
2003 IXYS All rights reserved
2 - 2
IXYS reserves the right to change limits, test conditions and dimensions.
0.5
1
1.5
2
0
50
100
150
200
VF [V]
I
F
[A]
T
vj
= 150C
T
vj
= 25C
0.4
0.6
0.8
1
1.2
1.4
1.6
10
0
10
1
10
2
10
3
t[ms]
I
(A)
FSM
TVJ=45C
TVJ=150C
750
675
I
------
I
FSM
F(OV)
0 VRRM
1/2 VRRM
1 VRRM
2
4
6
10
TVJ=45C
TVJ=150C
t [ms]
1
10
10
10
2
3
4
As
2
50
30
10
0
25
50
75
100
125
150
175
200
85
90
95
100
105
110
115
120
125
130
135
140
145
150
TC
C
DC
sin.180
rec.120
rec.60
rec.30
2.67
1.17
0.67
0.42
0.3 0.17
= RTHCA [K/W]
IFAVM
[A]
Tamb
[K]
0
50
100
150
[W]
PVTOT
PSB 51
50
100
150
200
0
10
20
30
40
50
60
DC
sin.180
rec.120
rec.60
rec.30
T (C)
C
IdAV
[A]
0.01
0.1
1
10
1
2
K/W
Z th
t[s]
Z
thJK
Z
thJC
VBO 55
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current per
diode I
FSM
: Crest value. t: duration
Fig.5 Maximum forward current
at case temperature
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig. 3
i
2
dt versus time
(1-10ms) per diode or thyristor
Fig. 6 Transient thermal impedance per diode or thyristor, calculated
316
typ.
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