www.docs.chipfind.ru
2000 IXYS All rights reserved
1 - 4
Symbol
Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
1200
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 20 k
W
1200
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
670
A
I
C80
T
C
= 80
C
460
A
I
CM
T
C
= 80
C, t
p
= 1 ms
920
A
t
SC
V
GE
= 15 V, V
CE
= V
CES
, T
J
= 125
C
10
m
s
(SCSOA)
R
G
= 1.8
W
, non repetitive
RBSOA
V
GE
= 15 V, T
J
= 125
C, R
G
= 1.8
W
I
CM
= 800
A
Clamped inductive load, L = 100
m
H
V
CEK
< V
CES
P
tot IGBT
T
C
= 25
C
2750
W
T
J
150
C
T
stg
-40 ... +150
C
V
ISOL
50/60 Hz, RMS
t = 1 min
4000
V~
I
ISOL
1 mA
t = 1 s
4800
V~
Insulating material: Al
2
O
3
M
d
Mounting torque (module)
2.25-2.75
Nm
20-25
lb.in.
(teminals)
2.5-3.7
Nm
22-33
lb.in.
d
S
Creepage distance on surface
14
mm
d
A
Strike distance through air
9.6
mm
a
Max. allowable acceleration
50
m/s
2
Weight
Typical
250
g
8.8
oz.
Data according to a single IGBT/FRED unless otherwise stated.
I
C25
= 670 A
V
CES
= 1200 V
V
CE(sat) typ.
= 2.3 V
Features
q
NPT IGBT technology
q
low saturation voltage
q
low switching losses
q
switching frequency up to 30 kHz
q
square RBSOA, no latch up
q
high short circuit capability
q
positive temperature coefficient for
easy parallelling
q
MOS input, voltage controlled
q
ultra fast free wheeling diodes
q
package with DCB ceramic base plate
q
isolation voltage 4800 V
q
UL registered E72873
Advantages
q
space and weight savings
q
reduced protection circuits
Typical Applications
q
AC and DC motor control
q
power supplies
q
welding inverters
Short Circuit SOA Capability
Square RBSOA
MID 550-12 A4
MDI 550-12 A4
8
9
1
2
3
11
10
E 72873
2
1
3
10
11
MID
2
1
3
9
8
MDI
IGBT Modules
Additional current limitation by external leads
030
2000 IXYS All rights reserved
2 - 4
Symbol
Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
(BR)CES
V
GE
= 0 V
1200
V
V
GE(th)
I
C
= 16 mA, V
CE
= V
GE
4.5
6.5
V
I
CES
V
CE
= V
CES
T
J
= 25
C
21 mA
T
J
= 125
C
30
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
1.6
A
V
CE(sat)
I
C
= 400 A, V
GE
= 15 V
2.3
2.8
V
C
ies
26
nF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
4
nF
C
res
2
nF
t
d(on)
100
ns
t
r
60
ns
t
d(off)
600
ns
t
f
90
ns
E
on
64
mJ
E
off
59
mJ
R
thJC
0.05 K/W
R
thJS
with heatsink compound
0.09
K/W
Free Wheeling Diode (FRED)
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
F
I
F
= 400 A, V
GE
= 0 V
2.4
2.6
V
I
F
= 400 A, V
GE
= 0 V, T
J
= 125
C
1.9
2.0
V
I
F
T
C
= 25
C
750
A
T
C
= 80
C
460
A
I
RM
I
F
= 400 A, V
GE
= 0 V, -di
F
/dt = 3000 A/
m
s
300
A
t
rr
T
J
= 125
C, V
R
= 600 V
200
ns
R
thJC
0.09 K/W
R
thJS
0.18
K/W
Anti Parallel Diode (FRED)
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
F
I
F
= 100 A, V
GE
= 0 V
2.4
2.6
V
I
F
= 100 A, V
GE
= 0 V, T
J
= 125
C
1.9
2.0
V
I
F
T
C
= 25
C
150
A
T
C
= 80
C
95
A
I
RM
I
F
= 100 A, V
GE
= 0 V, -di
F
/dt = 600 A/
m
s
62
A
t
rr
T
J
= 125
C, V
R
= 600 V
200
ns
R
thJC
0.45 K/W
R
thJS
0.9
K/W
Inductive load, T
J
= 125
C
I
C
= 400 A, V
GE
= 15 V
V
CE
= 600 V, R
G
= 1.8
W
MID 550-12 A4
MDI 550-12 A4
Dimensions in mm (1 mm = 0.0394")
Additional current limitation by external leads
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at V
GE
= 15 V; T
J
= 125C)
V
0
= 1.3 V; R
0
= 3.2 mW
Free Wheeling Diode (typ. at T
J
= 125C)
V
0
= 1.3 V; R
0
= 1.5 mW
Thermal Response
IGBT (typ.)
C
th1
= 0.90 J/K; R
th1
= 0.049 K/W
C
th2
= 2.07 J/K; R
th2
= 0.001 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.71 J/K; R
th1
= 0.090 K/W
C
th2
= 1.30 J/K; R
th2
= 0.002 K/W
2000 IXYS All rights reserved
3 - 4
0
200
400
600
800
1000
0
40
80
120
0
100
200
300
0
1
2
3
4
0
200
400
600
800
1000
1200
1400
1600
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
100
200
300
400
500
600
700
800
900
0
500
1000
1500
2000
0
5
10
15
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
100
200
300
400
500
600
700
800
900
13V
11V
T
J
= 25C
V
GE
=17V
T
J
= 125C
V
CE
= 600V
I
C
= 400A
15V
5
6
7
8
9
10
11
0
100
200
300
400
500
600
700
800
13V
11V
V
GE
=17V
15V
V
CE
= 20V
T
J
= 25C
T
J
= 25C
T
J
= 125C
9V
9V
V
CE
V
A
I
C
V
CE
A
I
C
V
V
V
V
GE
V
F
A
I
C
A
I
F
nC
Q
G
-di/dt
V
V
GE
A
I
RM
t
rr
ns
A/
m
s
550-12
T
J
= 125C
V
R
= 600V
I
F
= 400A
I
RM
t
rr
Fig. 3
Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of
free wheeling diode
Fig. 5
Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of
free wheeling diode
Fig. 1
Typ. output characteristics
Fig. 2 Typ. output characteristics
MID 550-12 A4
MDI 550-12 A4
2000 IXYS All rights reserved
4 - 4
0
200
400
600
800
1000
0
40
80
120
160
0
40
80
120
160
0
200
400
600
800
1000
0
40
80
120
160
0
200
400
600
800
0.00001
0.0001
0.001
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
0
2
4
6
8
10
12
14
0
20
40
60
80
100
0
400
800
1200
1600
2000
0
2
4
6
8
10
12
14
0
40
80
120
160
200
0
80
160
240
320
400
single pulse
V
CE
= 600V
V
GE
= 15V
R
G
= 1.8
W
T
J
= 125C
550-12
V
CE
= 600V
V
GE
= 15V
I
C
= 400A
T
J
= 125C
0
200
400
600
800
1000 1200
0
200
400
600
800
1000
R
G
= 1.8
W
T
J
= 125C
V
CEK
< V
CES
V
CE
= 600V
V
GE
= 15V
R
G
= 1.8
W
T
J
= 125C
E
on
V
CE
= 600V
V
GE
= 15V
I
C
= 400A
T
J
= 125C
t
d(on)
t
r
E
off
t
d(off)
t
f
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
I
C
A
I
C
A
mJ
E
off
mJ
E
on
ns
t
ns
t
R
G
W
R
G
W
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
K/W
Z
thJC
IGBT
diode
I
CM
V
A
Fig. 7
Typ. turn on energy and switching
Fig. 8 Typ. turn off energy and switching
times versus collector current
times versus collector current
Fig. 9
Typ. turn on energy and switching
Fig.10 Typ. turn off energy and switching
times versus gate resistor
times versus gate resistor
Fig. 11 Reverse biased safe operating area
Fig. 12 Typ. transient thermal impedance
RBSOA
MID 550-12 A4
MDI 550-12 A4
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