1 - 4
2003 IXYS All rights reserved
320
FII 50-12E
Features
NPT
3
IGBT
- low saturation voltage
- positive temperature coefficient for
easy paralleling
- fast switching
- short tail current for optimized
performance in resonant circuits
HiPerFRED
TM
diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
ISOPLUS i4-PAC
TM
package
- isolated back surface
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered, E 72873
Applications
single phaseleg
- buck-boost chopper
H bridge
- power supplies
- induction heating
- four quadrant DC drives
- controlled rectifier
three phase bridge
- AC drives
- controlled rectifier
I
C25
= 50 A
V
CES
= 1200 V
V
CE(sat) typ.
= 2.0 V
NPT
3
IGBT phaseleg
in ISOPLUS i4-PAC
TM
1
5
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
3
5
4
1
2
IGBTs
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25C to 150C
1200
V
V
GES
20
V
I
C25
T
C
= 25C
50
A
I
C90
T
C
= 90C
32
A
I
CM
V
GE
=
15 V; R
G
= 39
; T
VJ
= 125C
50
A
V
CEK
RBSOA, Clamped inductive load; L = 100 H
V
CES
t
SC
V
CE
= 900V; V
GE
=
15 V; R
G
= 39
; T
VJ
= 125C
10
s
(SCSOA)
non-repetitive
P
tot
T
C
= 25C
200
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 30 A; V
GE
= 15 V; T
VJ
= 25C
2.0
2.6
V
T
VJ
= 125C
2.3
V
V
GE(th)
I
C
= 1 mA; V
GE
= V
CE
4.5
6.5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25C
0.4
mA
T
VJ
= 125C
0.4
mA
I
GES
V
CE
= 0 V; V
GE
=
20 V
200
nA
t
d(on)
85
ns
t
r
50
ns
t
d(off)
440
ns
t
f
50
ns
E
on
4.6
mJ
E
off
2.2
mJ
C
ies
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
2
nF
Q
Gon
V
CE
= 600 V; V
GE
= 15 V; I
C
= 30 A
250
nC
R
thJC
0.6 K/W
R
thJH
with heatsink compound
1.2
K/W
Inductive load, T
VJ
= 125C
V
CE
= 600 V; I
C
= 30 A
V
GE
= 15 V; R
G
= 39
2 - 4
2003 IXYS All rights reserved
320
FII 50-12E
Component
Symbol
Conditions
Maximum Ratings
T
VJ
-55...+150
C
T
stg
-55...+125
C
V
ISOL
I
ISOL
1 mA; 50/60 Hz
2500
V~
F
C
mounting force with clip
20...120
N
Symbol
Conditions
Characteristic Values
min.
typ.
max.
d
S
,d
A
pin - pin
1.7
mm
d
S
,d
A
pin - backside metal
5.5
mm
Weight
9
g
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at V
GE
= 15 V; T
J
= 125C)
V
0
= 0.95 V; R
0
= 45 m
Diode (typ. at T
J
= 125C)
V
0
= 1.26V; R
0
= 15 m
Thermal Response
IGBT
C
th1
= 0.067 J/K; R
th1
= 0.108 K/W
C
th2
= 0.175 J/K; R
th2
= 0.491 K/W
Diode
C
th1
= 0.039 J/K; R
th1
= 0.337 K/W
C
th2
= 0.090 J/K; R
th2
= 0.963 K/W
Dimensions in mm (1 mm = 0.0394")
Diodes
Symbol
Conditions
Maximum Ratings
I
F25
T
C
= 25C
48
A
I
F90
T
C
= 90C
25
A
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V
F
I
F
= 30 A; T
VJ
= 25C
2.4
2.8
V
T
VJ
= 125C
1.8
V
I
RM
51
A
t
rr
180
ns
E
rec(off)
1.8
mJ
R
thJC
(per diode)
1.3 K/W
R
thJS
1.6
K/W
I
F
= 30 A; di
F
/dt = -1100 A/s; T
VJ
= 125C
V
R
= 600 V; V
GE
= 0 V
3 - 4
2003 IXYS All rights reserved
320
FII 50-12E
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
Fig. 3 Typ. transfer characteristics
Fig. 4
Typ. forward characteristics of
free wheeling diode
Fig. 5
Typ. turn on gate charge
Fig. 6
Typ. transient thermal impedance
0
1
2
3
4
5
6
7
0
20
40
60
80
100
120
0
40
80
120
160
200
0
5
10
15
20
0
1
2
3
4
5
6
7
0
20
40
60
80
100
120
V
CE
V
I
C
V
CE
A
I
C
V
nC
Q
G
V
V
GE
9 V
11 V
9 V
11 V
A
4
6
8
10
12
14
16
0
20
40
60
80
100
120
V
V
GE
A
I
C
0
1
2
3
4
0
15
30
45
60
75
90
V
V
F
I
F
A
0.001
0.01
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
single pulse
t
s
K/W
Z
thJC
IGBT
MUBW3512E7
13 V
15 V
T
VJ
= 25C
V
GE
= 17 V
15 V
13 V
T
VJ
= 125C
V
GE
= 17 V
T
VJ
= 25C
T
VJ
= 125C
V
CE
= 20 V
T
VJ
= 125C
T
VJ
= 25C
V
CE
= 600 V
I
C
= 35 A
diode
4 - 4
2003 IXYS All rights reserved
320
FII 50-12E
Fig. 9
Typ. turn on energy and switching
Fig.10 Typ. turn off energy and switching
times versus gate resistor
times versus gate resistor
Fig. 11
Typ. turn off characteristics
Fig. 12
Typ. turn off characteristics
of free wheeling diode
of free wheeling diode
0
10
20
30
40
50
60
70
0
200
400
600
800
1000
1200
1400
1600
1800
-di
F
/dt [A/s]
I
RM
[A
]
0
50
100
150
200
250
300
350
t
rr
[n
s
]
R
G
=
I
RM
t
RR
0
2
4
6
8
10
12
0
200
400
600
800
1000
1200
1400
1600
1800
-di
F
/dt [A/s]
Q
rr
[
C]
I
F
=
R
G
=
75
56
39
24
15
7,5A
70A
50A
35A
15A
Fig. 7
Typ. turn on energy and switching
Fig. 8
Typ. turn off energy and switching
times versus collector current
times versus collector current
T
VJ
= 125C
I
F
= 30 A
V
R
= 600 V
T
VJ
= 125C
V
R
= 600 V
0
20
40
60
80
0
4
8
12
16
20
0
10
20
30
40
50
60
70
80
90
100
0
20
40
60
80
0
2
4
6
0
200
400
600
800
1000
1200
10
20
30
40
50
60
70
80
0
1
2
3
4
0
200
400
600
800
10
20
30
40
50
60
70
80
0
2
4
6
8
0
40
80
120
160
E
off
t
d(off)
t
f
E
off
t
d(off)
t
f
I
C
A
I
C
A
E
off
E
on
t
t
R
G
R
G
mJ
E
on
mJ
E
off
ns
t
ns
t
mJ
ns
mJ
V
CE
= 600 V
V
GE
= 15 V
I
C
= 35 A
T
VJ
= 125C
ns
Eon
tr
td(on)
Eon
tr
td(on)
V
CE
= 600 V
V
GE
= 15 V
R
G
= 39
T
VJ
= 125C
V
CE
= 600 V
V
GE
= 15 V
I
C
= 35 A
T
VJ
= 125C
V
CE
= 600 V
V
GE
= 15 V
R
G
= 39
T
VJ
= 125C
E
rec(off)
E
rec(off)
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