1 - 4
2005 IXYS All rights reserved
0549
FII 30-12E
IXYS reserves the right to change limits, test conditions and dimensions.
Features
NPT
3
IGBT
- positive temperature coefficient of
saturation voltage for easy paralleling
- fast switching
- short tail current for optimized
performance in resonant circuits
HiPerFRED
TM
diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
ISOPLUS i4-PAC
TM
package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered, E 72873
Applications
single phaseleg
- buck-boost chopper
H bridge
- power supplies
- induction heating
- four quadrant DC drives
- controlled rectifier
three phase bridge
- AC drives
- controlled rectifier
I
C25
= 33 A
V
CES
= 1200 V
V
CE(sat) typ
= 2.4 V
NPT
3
IGBT
Phaseleg Topology
in ISOPLUS i4-PAC
TM
3
5
4
1
2
1
5
IGBTs
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25C to 150C
1200
V
V
GES
20
V
I
C25
T
C
= 25C
33
A
I
C90
T
C
= 90C
20
A
I
CM
V
GE
=
15 V; R
G
= 68
; T
VJ
= 125C
40
A
V
CEK
RBSOA, Clamped inductive load; L = 100 H
V
CES
t
SC
V
CE
= 900V; V
GE
=
15 V; R
G
= 68
; T
VJ
= 125C
10
s
(SCSOA)
non-repetitive
P
tot
T
C
= 25C
150
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 20 A; V
GE
= 15 V; T
VJ
= 25C
2.4
2.9
V
T
VJ
= 125C
2.8
V
V
GE(th)
I
C
= 0.6 mA; V
GE
= V
CE
4.5
6.5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25C
0.2
mA
T
VJ
= 125C
0.2
mA
I
GES
V
CE
= 0 V; V
GE
=
20 V
200
nA
t
d(on)
205
ns
t
r
105
ns
t
d(off)
320
ns
t
f
175
ns
E
on
4.1
mJ
E
off
1.5
mJ
C
ies
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
1.2
nF
Q
Gon
V
CE
= 600 V; V
GE
= 15 V; I
C
= 20 A
100
nC
R
thJC
0.8 K/W
R
thJH
with heat transfer paste
1.2
K/W
Inductive load, T
VJ
= 125C
V
CE
= 600 V; I
C
= 20 A
V
GE
= 15 V; R
G
= 68
2 - 4
2005 IXYS All rights reserved
0549
FII 30-12E
IXYS reserves the right to change limits, test conditions and dimensions.
Component
Symbol
Conditions
Maximum Ratings
T
VJ
-55...+150
C
T
stg
-55...+125
C
V
ISOL
I
ISOL
1 mA; 50/60 Hz
2500
V~
F
C
mounting force with clip
20...120
N
Symbol
Conditions
Characteristic Values
min.
typ.
max.
C
p
coupling capacity between shorted pins
40
pF
and mounting tab in the case
d
S
,d
A
pin - pin
1.7
mm
d
S
,d
A
pin - backside metal
5.5
mm
Weight
9
g
Diodes
Symbol
Conditions
Maximum Ratings
I
F25
T
C
= 25C
25
A
I
F90
T
C
= 90C
15
A
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V
F
I
F
= 20 A; T
VJ
= 25C
2.5
3.0
V
T
VJ
= 125C
1.9
V
I
RM
I
F
= 15 A; di
F
/dt = -400 A/s; T
VJ
= 125C
16
A
t
rr
V
R
= 600 V; V
GE
= 0 V
130
ns
R
thJC
(per diode)
2.3 K/W
R
thCH
with heat transfer paste
3.6
K/W
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at V
GE
= 15 V; T
J
= 125C)
V
0
= 1.09 V; R
0
= 85 m
Free Wheeling Diode (typ. at T
J
= 125C)
V
0
= 1.3 V; R
0
= 32 m
Thermal Response
IGBT (typ.)
C
th1
= 0.049 J/K; R
th1
= 0.15 K/W
C
th2
= 0.133 J/K; R
th2
= 0.65 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.021 J/K; R
th1
= 0.63 K/W
C
th2
= 0.052 J/K; R
th2
= 1.67 K/W
Dimensions in mm (1 mm = 0.0394")
3 - 4
2005 IXYS All rights reserved
0549
FII 30-12E
IXYS reserves the right to change limits, test conditions and dimensions.
0
200
400
600
800
1000
0
10
20
30
40
0
50
100
150
200
0
1
2
3
4
5
6
0
20
40
60
80
0
20
40
60
80
100
0
3
6
9
12
15
0
1
2
3
4
5
6
0
10
20
30
40
50
60
V
CE
V
I
C
V
CE
A
I
C
V
nC
Q
G
-di/dt
V
V
GE
I
RM
t
rr
A/
s
FII30-12E
I
RM
t
rr
9 V
11 V
A
11 V
0
5
10
15
20
0
20
40
60
80
V
V
GE
A
I
C
0
1
2
3
4
0
10
20
30
40
50
V
V
F
I
F
A
ns
9 V
13 V
13 V
15 V
T
VJ
= 25C
T
VJ
= 125C
V
CE
= 20 V
T
VJ
= 125C
T
VJ
= 25C
T
VJ
= 125C
V
R
= 600 V
I
F
= 15 A
T
VJ
= 25C
V
GE
= 17 V
A
V
GE
= 17 V
T
VJ
= 125C
V
CE
= 600 V
I
C
= 20 A
15 V
Fig. 1
Typ. output characteristics
Fig. 2
Typ. output characteristics
Fig. 3
Typ. transfer characteristics
Fig. 4
Typ. forward characteristics of
free wheeling diode
Fig. 5
Typ. turn on gate charge
Fig. 6
Typ. turn off characteristics of
free wheeling diode
4 - 4
2005 IXYS All rights reserved
0549
FII 30-12E
IXYS reserves the right to change limits, test conditions and dimensions.
0
10
20
30
40
0
4
8
12
16
20
0
50
100
150
200
250
0
10
20
30
40
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
50
100
150
200
250
300
350
400
0.00001 0.0001 0.001
0.01
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
0
50
100
150
200
250
0.0
0.5
1.0
1.5
2.0
2.5
0
250
500
750
1000
1250
0
50
100
150
200
250
0
2
4
6
8
10
single pulse
0
200
400
600
800
1000 1200
0
20
40
60
80
E
off
t
d(off)
t
f
E
on
t
r
E
off
t
d(off)
t
f
I
C
A
I
C
A
E
off
E
on
t
t
R
G
R
G
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
I
CM
K/W
Z
thJC
IGBT
diode
V
A
mJ
ns
t
d(on)
V
CE
= 600 V
V
GE
= 15 V
I
C
= 20 A
T
VJ
= 125C
V
CE
= 600 V
V
GE
= 15 V
I
C
= 20 A
T
VJ
= 125C
FII30-12E
V
CE
= 600 V
V
GE
= 15 V
R
G
= 68
T
VJ
= 125C
V
CE
= 600 V
V
GE
= 15 V
R
G
= 68
T
VJ
= 125C
R
G
= 68
T
VJ
= 125C
mJ
ns
Fig. 7 Typ. turn on energy and switching
Fig. 8
Typ. turn off energy and switching
times versus collector current
times versus collector current
Fig. 9 Typ. turn on energy vs gate resistor
Fig.10 Typ. turn off energy and switching
times versus gate resistor
Fig. 11 Reverse biased safe operating area
Fig. 12 Typ. transient thermal impedance
RBSOA
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