2005 IXYS All rights reserved
1 - 2
IXYS reserves the right to change limits, Conditions and dimensions.
0519
DSEC 60-03A
DSEC 60-03AR
V
RSM
V
RRM
Type
V
V
300
300
DSEC 60-03A
300
300
DSEC 60-03AR
I
FAV
= 2x30 A
V
RRM
= 300 V
t
rr
= 30 ns
Symbol
Conditions
Maximum Ratings
I
FRMS
70
A
I
FAVM
T
C
= 145C; rectangular, d = 0.5
30
A
T
C
= 135C (AR-Version)
I
FSM
T
VJ
= 45C; t
p
= 10 ms (50 Hz), sine
300
A
E
AS
T
VJ
= 25C; non-repetitive
1.2
mJ
I
AS
= 3 A; L = 180 H
I
AR
V
A
= 1.5V
R
typ.; f = 10 kHz; repetitive
0.3
A
T
VJ
-55...+175
C
T
VJM
175
C
T
stg
-55...+150
C
P
tot
T
C
= 25C
165
W
M
d
*
mounting torque
0.8...1.2
Nm
F
C
mounting force with clip
20...120
N
V
ISOL
**
50/60 Hz, RMS, t = 1 minute, leads-to-tab
2500
V~
Weight
typical
6
g
* Verson A only; ** Version AR only
Symbol
Conditions
Characteristic Values
typ.
max.
I
R
V
R
= V
RRM
; T
VJ
= 25C
10
A
T
VJ
= 150C
1
mA
V
F
I
F
= 30 A;
T
VJ
= 150C
0.91
V
T
VJ
= 25C
1.25
V
R
thJC
Version A
0.9
K/W
Version AR
1.1
K/W
R
thCH
0.25
K/W
t
rr
I
F
= 1 A; -di/dt = 200 A/s;
30
ns
V
R
= 30 V; T
VJ
= 25C
I
RM
V
R
= 100 V; I
F
= 50 A; -di
F
/dt = 100 A/s
7
A
T
VJ
= 100C
HiPerFRED
TM
Epitaxial Diode
with common cathode and soft recovery
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0%
Pulse Width = 300 s, Duty Cycle < 2.0%
Data according to IEC 60747 and per diode unless otherwise specified
Features
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Version AR isolated and
UL registered E153432
Applications
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Dimensions see Outlines.pdf
A
C
A
A = Anode, C = Cathode
TO-247 AD
ISOPLUS 247
TM
Version A
Version AR
A
A
C
A
A
C
Isolated
back surface *
*
Patent pending
C (TAB)
2005 IXYS All rights reserved
2 - 2
IXYS reserves the right to change limits, Conditions and dimensions.
0519
DSEC 60-03A
DSEC 60-03AR
NOTE: Fig. 2 to Fig. 6 shows typical values
200
600
1000
0
400
800
40
50
60
70
80
90
0.00001
0.0001
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
0
40
80
120
160
0.4
0.6
0.8
1.0
1.2
1.4
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0
200
400
600
800
1000
8
10
12
14
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
FR
di
F
/dt
V
200
600
1000
0
400
800
0
5
10
15
20
25
30
100
1000
0
200
400
600
800
0.0
0.5
1.0
1.5
0
20
40
60
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
s
A
V
nC
A/
s
A/
s
t
rr
ns
t
fr
A/
s
s
DSEP30-03A/DSEC 60-03A
Z
thJC
T
VJ
=150C
T
VJ
=100C
T
VJ
= 25C
I
F
= 60A
I
F
= 30A
I
F
= 15A
T
VJ
= 100C
V
R
= 150V
T
VJ
= 100C
V
R
= 150V
T
VJ
= 100C
V
R
= 150V
T
VJ
= 100C
I
F
= 30A
V
FR
t
fr
I
RM
Q
r
I
F
= 60A
I
F
= 30A
I
F
= 15A
I
F
= 60A
I
F
= 30A
I
F
= 15A
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
Fig. 1 Forward current I
F
versus V
F
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
Fig. 7 Transient thermal resistance junction to case
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.465
0.005
2
0.179
0.0003
3
0.256
0.04
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