1999 IXYS All rights reserved
C (TAB)
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
G
C
E
TO-247 AD
98525A (5/99)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 750
A, V
GE
= 0 V
600
V
V
GE(th)
I
C
= 250
A, V
CE
= V
GE
2.5
5.0
V
I
CES
V
CE
= 0.8 V
CES
T
J
= 25
C
200
A
V
GE
= 0 V
T
J
= 125
C
3
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
1.8
V
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
600
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
600
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
76
A
I
C90
T
C
= 90
C
39
A
I
CM
T
C
= 25
C, 1 ms
152
A
SSOA
V
GE
= 15 V, T
VJ
= 125
C, R
G
= 22
I
CM
= 76
A
(RBSOA)
Clamped inductive load, L = 30
H
@ 0.8 V
CES
P
C
T
C
= 25
C
200
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
Maximum Lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque, TO-247 AD
1.13/10
Nm/lb.in.
Weight
TO-247 AD
6
g
HiPerFAST
TM
IGBT
with Diode
Features
International standard package
JEDEC TO-247 AD
Moderate frequency IGBT and
antiparallel FRED in one package
Low leakage current FRED
High current handling capability
Newest generation HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Applications
PFC circuits
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Advantages
Space savings (two devices in one
package)
High power density
Insulated mounting screw hole
Preliminary data sheet
V
CES
= 600 V
I
C25
= 76 A
V
CE(sat)
= 1.8 V
t
fi(typ)
= 200 ns
IXGH 39N60BD1
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
TO-247 AD Outline
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.7
5.3
.185
.209
A
1
2.2
2.54
.087
.102
A
2
2.2
2.6
.059
.098
b
1.0
1.4
.040
.055
b
1
1.65
2.13
.065
.084
b
2
2.87
3.12
.113
.123
C
.4
.8
.016
.031
D
20.80
21.46
.819
.845
E
15.75
16.26
.610
.640
e
5.20
5.72
0.205 0.225
L
19.81
20.32
.780
.800
L1
4.50
.177
P
3.55
3.65
.140
.144
Q
5.89
6.40
0.232 0.252
R
4.32
5.49
.170
.216
S
6.15 BSC
242 BSC
e
P
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
19
S
Pulse test, t
300
s, duty cycle
2 %
C
ies
2750
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
250
pF
C
res
50
pF
Q
g
140
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
30
nC
Q
gc
60
nC
t
d(on)
25
ns
t
ri
30
ns
t
d(off)
250
500
ns
t
fi
200
360
ns
E
off
4.0
6.0 mJ
t
d(on)
25
ns
t
ri
30
ns
E
on
1.0
mJ
t
d(off)
360
ns
t
fi
350
ns
E
off
6.0
mJ
R
thJC
0.62 K/W
R
thCK
0.25
K/W
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
V
F
I
F
= 30A, V
GE
= 0 V,
T
J
=150
C
1.6
V
Note 1
T
J
=25
C
2.5
V
I
RM
I
F
= 50A, V
GE
= 0 V, V
R
= 100 V T
J
=100
C 3.5
A
-di
F
/dt = 100 A/
s
t
rr
I
F
= 1 A; -di/dt = 100 A/
s; V
R
= 30 V T
J
=25
C 25
ns
R
thJC
1.0 K/W
Inductive load, T
J
= 25
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 150
C
I
C
= I
C90
, V
GE
= 15 V, L = 100
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 4.7
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Note 1: Pulse test, t
300
s, duty cycle d
2 %
IXGH 39N60BD1
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