1 - 5
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
600
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
W
600
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
48
A
I
C110
T
C
= 110
C
24
A
I
CM
T
C
= 25
C, 1 ms
80
A
SSOA
V
GE
= 15 V, T
VJ
= 125
C, R
G
= 22
W
I
CM
= 48
A
(RBSOA)
Clamped inductive load, L = 100
m
H
@ 0.8 V
CES
P
C
T
C
= 25
C
150
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque (M3)
1.13/10 Nm/lb.in.
Weight
TO-247
6
g
TO-268
4
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 750
m
A, V
GE
= 0 V
600
V
V
GE(th)
I
C
= 250
m
A, V
CE
= V
GE
2.5
5.5
V
I
CES
V
CE
= 0.8 V
CES
T
J
= 25
C
200
m
A
V
GE
= 0 V
T
J
= 150
C
3
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
C110
, V
GE
= 15 V
2.1
2.5
V
98603A (4/99)
TO-268
(IXGT)
C (TAB)
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
G
C
E
TO-247 AD
(IXGH)
E
C (TAB)
Features
International standard packages
JEDEC TO-247 and surface
mountable TO-268
High frequency IGBT
High current handling capability
Latest generation HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Fast recovery expitaxial Diode (FRED)
- soft recovery with low I
RM
Applications
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
High power density
Very fast switching speeds for high
frequency applications
IXGH 24N60CD1 V
CES
= 600 V
IXGT 24N60CD1
I
C25
= 48 A
V
CE(sat)
= 2.5 V
G
HiPerFAST
TM
IGBT
with Diode
Lightspeed
Series
Preliminary data
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 5
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C110
; V
CE
= 10 V,
9
17
S
Pulse test, t
300
m
s, duty cycle
2 %
C
ies
1500
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
170
pF
C
res
40
pF
Q
g
55
nC
Q
ge
I
C
= I
C110
, V
GE
= 15 V, V
CE
= 0.5 V
CES
13
nC
Q
gc
17
nC
t
d(on)
15
ns
t
ri
25
ns
t
d(off)
75
140
ns
t
fi
60
110
ns
E
off
0.24
0.36
mJ
t
d(on)
15
ns
t
ri
25
ns
E
on
1
mJ
t
d(off)
130
ns
t
fi
110
ns
E
off
0.6
mJ
R
thJC
0.83 K/W
R
thCK
(TO-247)
0.25
K/W
Inductive load, T
J
= 25
C
I
C
= I
C110
, V
GE
= 15 V, L = 100
m
H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 10
W
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 125
C
I
C
= I
C110
, V
GE
= 15 V, L = 100
m
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 10
W
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
IXGH 24N60CD1
IXGT 24N60CD1
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
V
F
I
F
= I
C110
, V
GE
= 0 V,
T
J
= 150
C
1.6
V
Pulse test, t
300
m
s, duty cycle d
2 % T
J
= 25
C
2.5
V
I
RM
I
F
= I
C110
, V
GE
= 0 V, -di
F
/dt = 100 A/
m
s
6
A
t
rr
V
R
= 100 V
T
J
= 100
C
100
ns
I
F
= 1 A; -di/dt = 100 A/
m
s; V
R
= 30 V T
J
= 25
C
25
ns
R
thJC
0.9 K/W
TO-247 AD (IXGH) Outline
Dim. Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780 0.800
B
20.80 21.46
0.819 0.845
C
15.75 16.26
0.610 0.640
D
3.55
3.65
0.140 0.144
E
4.32
5.49
0.170 0.216
F
5.4
6.2
0.212 0.244
G
1.65
2.13
0.065 0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040 0.055
K
10.8
11.0
0.426 0.433
L
4.7
5.3
0.185 0.209
M
0.4
0.8
0.016 0.031
N
1.5
2.49
0.087 0.102
TO-268AA (D
3
PAK)
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.9
5.1
.193
.201
A
1
2.7
2.9
.106
.114
A
2
.02
.25
.001
.010
b
1.15
1.45
.045
.057
b
2
1.9
2.1
.75
.83
C
.4
.65
.016
.026
D
13.80
14.00
.543
.551
E
15.85
16.05
.624
.632
E
1
13.3
13.6
.524
.535
e 5.45 BSC .215 BSC
H
18.70
19.10
.736
.752
L
2.40
2.70
.094
.106
L1
1.20
1.40
.047
.055
L2
1.00
1.15
.039
.045
L3 0.25 BSC .010 BSC
L4
3.80
4.10
.150
.161
Min. Recommended Footprint
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
3 - 5
2000 IXYS All rights reserved
IXGH 24N60CD1
IXGT 24N60CD1
V
CE
-Volts
0
5
10
15
20
25
30
35
40
C
a
pacit
a
nce
-
pF
10
100
1000
T
J
- Degrees C
25
50
75
100
125
150
V
CE (
s
a
t
)
-
N
o
r
m
ali
z
ed
0.6
0.8
1.0
1.2
1.4
V
CE
- Volts
0
1
2
3
4
5
I
C
- A
m
p
e
r
e
s
0
10
20
30
40
50
V
GE
- Volts
2
3
4
5
6
7
8
9
10
I
C
-
A
m
per
e
s
0
10
20
30
40
50
V
CE
- Volts
0
4
8
12
16
20
I
C
- A
m
p
e
r
e
s
0
40
80
120
160
200
11V
9V
7V
V
CE
= 10V
T
J
= 25C
T
J
= 25C
I
C
= 12A
I
C
= 24A
I
C
= 48A
T
J
=
125C
C
rss
f = 1Mhz
9V
V
GE
= 15V
T
J
= 25C
V
CE
- Volts
0
1
2
3
4
5
I
C
-
A
m
per
e
s
0
10
20
30
40
50
T
J
= 125C
V
GE
= 15V
13V
V
GE
= 15V
13V
5V
7V
7V
V
GE
= 15V
13V
C
iss
C
oss
11V
9V
11V
Fig. 1 Saturation Voltage Characteristics
Fig. 2 Extended Output Characteristics
Fig.4
Temperature Dependence of V
CE(sat)
Fig. 6 Temperature Dependence of V
F &
V
F
Fig. 3 Saturation Voltage Characteristics
Fig. 5 Admittance Curves
4 - 5
2000 IXYS All rights reserved
IXGH 24N60CD1
IXGT 24N60CD1
Pulse Width - Seconds
0.00001
0.0001
0.001
0.01
0.1
1
Z
th
J
C
(
K
/W
)
0.001
0.01
0.1
1
D=0.2
V
CE
- Volts
0
100
200
300
400
500
600
I
C
- A
m
p
e
r
e
s
0.1
1
10
100
Q
g
- nanocoulombs
0
20
40
60
80
V
GE
- V
o
l
t
s
0
4
8
12
16
R
G
- Ohms
0
10
20
30
40
50
60
E
(O
F
F
)
-
m
ill
ij
o
u
l
e
s
0.0
0.5
1.0
1.5
2.0
E
(O
N)
-
mi
ll
i
j
ou
le
s
0.0
0.5
1.0
1.5
2.0
I
C
- Amperes
0
10
20
30
40
50
E
(
O
FF)
-
mi
ll
iJ
ou
l
e
s
0.0
0.5
1.0
1.5
2.0
E
(O
N)
-
mi
ll
ij
oul
es
0.00
0.25
0.50
0.75
1.00
V
CE
= 300V
I
C
= 12A
I
C
= 24A
E
(ON)
E
(OFF)
T
J
= -55 to +125C
R
G
= 4.7
W
dV/dt < 5V/ns
D=0.5
D=0.1
D=0.05
D=0.02
D=0.01
Single pulse
D = Duty Cycle
R
G
= 10
W
T
J
= 125C
40
E
(ON)
I
C
=48A
E
(OFF)
T
J
= 125C
E
(ON)
I
C
= 24A
E
(ON)
E
(OFF)
E
(OFF)
Fig. 11 IGBT Transient Thermal Resistance
Fig.10. Turn-off Safe Operating Area
Fig.9. Gate Charge
Fig.7. Dependence of E
OFF
and E
OFF
on I
C
Fig.8. Dependence of E
OFF
on R
G
5 - 5
2000 IXYS All rights reserved
IXGH 24N60CD1
IXGT 24N60CD1
200
600
1000
0
400
800
60
70
80
90
0.00001
0.0001
0.001
0.01
0.1
1
0.001
0.01
0.1
1
0
40
80
120
160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
C
-di
F
/dt
t
s
K/W
0
200
400
600
800
1000
0
5
10
15
20
0.00
0.25
0.50
0.75
1.00
V
FR
di
F
/dt
V
200
600
1000
0
400
800
0
5
10
15
20
25
30
100
1000
0
200
400
600
800
1000
0
1
2
3
0
10
20
30
40
50
60
I
RM
Q
r
I
F
A
V
F
-di
F
/dt
-di
F
/dt
A/
m
s
A
V
nC
A/
m
s
A/
m
s
t
rr
ns
t
fr
Z
thJC
A/
m
s
s
DSEP 29-06
I
F
= 60A
I
F
= 30A
I
F
= 15A
T
VJ
= 100C
V
R
= 300V
T
VJ
= 100C
I
F
= 30A
Fig. 14 Peak reverse current I
RM
versus -di
F
/dt
Fig. 13 Reverse recovery charge Q
r
versus -di
F
/dt
Fig. 12 Forward current I
F
versus V
F
T
VJ
= 100C
V
R
= 300V
T
VJ
= 100C
V
R
= 300V
I
F
= 60A
I
F
= 30A
I
F
= 15A
Q
r
I
RM
Fig. 15 Dynamic parameters Q
r
, and
I
RM
versus T
VJ
temperature
Fig. 16 Recovery time t
rr
versus -di
F
/dt
Fig. 17 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
I
F
= 60A
I
F
= 30A
I
F
= 15A
t
fr
V
FR
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
t
i
(s)
1
0.502
0.0052
2
0.193
0.0003
3
0.205
0.0162
T
VJ
=25C
T
VJ
=100C
T
VJ
=150C
Fig. 18 Transient thermal resistance junction to case
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