1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150
C
800
V
V
DGR
T
J
= 25
C to 150
C; R
GS
= 1 M
W
800
V
V
GS
Continuous
20
V
V
GSM
Transient
30
V
I
D25
T
C
= 25
C
8N80
8
A
9N80
9
A
I
DM
T
C
= 25
C, pulse width limited by T
JM
8N80
32
A
9N80
36
A
I
AR
T
C
= 25
C
8N80
8
A
9N80
9
A
E
AR
T
C
= 25
C
18
mJ
dv/dt
I
S
I
DM
, di/dt
100 A/
m
s, V
DD
V
DSS
,
5
V/ns
T
J
150
C, R
G
= 2
W
P
D
T
C
= 25
C
180
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
6
g
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3 mA
800
V
V
DSS
temperature coefficient
0.088
%/K
V
GS(th)
V
DS
= V
GS
, I
D
= 2.5 mA
2
4.5
V
V
GS(th)
temperature coefficient
-0.257
%/K
I
GSS
V
GS
=
20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= 0.8 V
DSS
T
J
= 25
C
250
m
A
V
GS
= 0 V
T
J
= 125
C
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
8N80
1.1
W
Pulse test, t
300
m
s, duty cycle
d
2%
9N80
0.9
W
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
TO-247 AD (IXFH)
Features
International standard packages
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
Space savings
High power density
V
DSS
I
D25
R
DS(on)
t
rr
IXFH8N80
800V
8A
1.1
W
250
ns
IXFH9N80
800V
9A
0.9
W
250
ns
96527A (8/97)
G = Gate
D = Drain
S = Source
TAB = Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
2 - 4
2000 IXYS All rights reserved
Source-Drain Diode
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
I
S
V
GS
= 0
8N80
8
A
9N80
9
A
I
SM
Repetitive; pulse width limited by T
JM
8N80
32
A
9N80
36
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
1.5
V
Pulse test, t
300
m
s, duty cycle
d
2 %
t
rr
T
J
=
25
C
250
ns
T
J
= 125
C
400
ns
Q
RM
T
J
=
25
C
0.5
m
C
T
J
= 125
C
1.0
m
C
I
RM
T
J
=
25
C
7.5
A
T
J
= 125
C
9.0
A
I
F
= I
S
-di/dt = 100 A/
m
s,
V
R
= 100 V
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
4
7
S
C
iss
2600
pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
240
pF
C
rss
60
pF
t
d(on)
35
ns
t
r
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
15
ns
t
d(off)
R
G
= 4.7
W
(External)
70
ns
t
f
35
ns
Q
g(on)
85
130
nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
15
30
nC
Q
gd
40
70
nC
R
thJC
0.7
K/W
R
thCK
0.25
K/W
IXFH8N80
IXFH9N80
TO-247 AD Outline
Dim. Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780 0.800
B
20.80 21.46
0.819 0.845
C
15.75 16.26
0.610 0.640
D
3.55
3.65
0.140 0.144
E
4.32
5.49
0.170 0.216
F
5.4
6.2
0.212 0.244
G
1.65
2.13
0.065 0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040 0.055
K
10.8
11.0
0.426 0.433
L
4.7
5.3
0.185 0.209
M
0.4
0.8
0.016 0.031
N
1.5
2.49
0.087 0.102
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
3 - 4
2000 IXYS All rights reserved
T
C
- Degrees C
-50 -25
0
25
50
75
100 125 150
I
D
-
A
m
peres
0
2
4
6
8
10
V
GS
- Volts
1
2
3
4
5
6
I
D
- A
m
p
e
r
e
s
0
2
4
6
8
10
T
J
- Degrees C
25
50
75
100
125
150
R
DS
(O
N)
-
N
o
r
m
ali
z
ed
0.8
1.2
1.6
2.0
2.4
I
D
= 4A
I
D
- Amperes
0
2
4
6
8
10
R
DS
(O
N
)
-
N
o
r
m
a
liz
ed
0.6
0.8
1.0
1.2
1.4
V
DS
- Volts
0
4
8
12
16
20
I
D
-
A
m
peres
0
2
4
6
8
10
V
DS
- Volts
0
2
4
6
8
10
I
D
-
A
m
peres
0
2
4
6
8
10
5V
V
GS
= 10V
T
J
= 125
O
C
V
GS
= 10V
T
J
= 25
O
C
T
J
= 25
o
C
T
J
= 125
o
C
T
J
= 25
O
C
6V
V
GS
=10V
V
GS
=10V
5V
6V
IXFH8N80
IXFH9N80
Figure 1. Output Characteristics at 25
O
C
Figure 2. Output Characteristics at 125
O
C
Figure 3. R
DS(on)
normalized to 15A/25
O
C vs. I
D
Figure 4. R
DS(on)
normalized to 15A/25
O
C vs. T
J
Figure 5. Drain Current vs. Case Temperature
Figure 6. Admittance Curves
IXFH8N80
IXFH9N80
4 - 4
2000 IXYS All rights reserved
V
DS
- Volts
1
1 0
1 00
I
D
-
A
m
pe
res
0. 1
1
1 0
V
DS
- Volts
0
5
10
15
20
25
30
35
40
C
a
p
aci
tan
ce -
p
F
10
100
1000
10000
V
SD
- Volts
0.0
0.2
0.4
0.6
0.8
1.0
I
D
- A
m
pe
r
e
s
0
2
4
6
8
10
Gate Charge - nC
0
20
40
60
80
100
120
V
GS
-
Vo
lt
s
0
2
4
6
8
10
12
Crss
Coss
Ciss
T
J
= 25
O
C
V
DS
= 400V
I
D
= 4A
I
G
= 1mA
f = 1MHz
32
T
C
= 25
O
C
10
ms
1 ms
100
ms
DC
800
T
J
= 125
O
C
Single Pulse
D=0.01
D=0.02
D=0.05
D=0.1
D=0.2
D=0.5
Pulse Width - Seconds
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
R
(th
)
JC
- K
/
W
0.00
0.01
0.10
1.00
Figure 7. Gate Charge
Figure 8. Capacitance Curves
Figure 9. Forward Voltage Drop of the Intrinsic Diode
Figure 11. Transient Thermal Resistance
IXFH8N80
IXFH9N80
Figure10. Forward Bias Safe Operating Area
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