1 - 2
2000 IXYS All rights reserved
98532 (7/98)
Features
Latest generation HDMOS
TM
process
International standard package
Guaranteed Short Circuit SOA
capability
Low V
CE(sat)
- for low on-state conduction losses
High current handling capability
MOS Gate turn-on
- drive simplicity
Fast fall time for switching speeds
up to 20 kHz
Applications
AC motor speed control
Uninterruptible power supplies (UPS)
Welding
Advantages
High power density
IXSH 16N60U1
Low V
CE(sat)
IGBT
with Diode
Short Circuit SOA Capability
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
600
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
W
600
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
32
A
I
C90
T
C
= 90
C
16
A
I
CM
T
C
= 25
C, 1 ms
52
A
SSOA
V
GE
= 15 V, T
J
= 125
C, R
G
= 150
W
I
CM
= 32
A
(RBSOA)
Clamped inductive load, L = 300
m
H
@ 0.8 V
CES
t
SC
V
GE
= 15 V, V
CE
= 360 V, T
J
= 125
C
5
m
s
(SCSOA)
R
G
= 82
W,
non repetitive
P
C
T
C
= 25
C
100
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
Weight
2
g
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering for 10s
260
C
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
BV
CES
I
C
= 250
m
A, V
GE
= 0 V
600
V
V
GE(th)
I
C
= 750
m
A, V
CE
= V
GE
3.5
6.5
V
I
CES
V
CE
= 0.8 V
CES
T
J
= 25
C
200
m
A
V
GE
= 0 V
T
J
= 125
C
1
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
1.8
2.3
V
Preliminary data
C (TAB)
G
C
E
TO-247 AD
IXYS reserves the right to change limits, test conditions, and dimensions.
V
CES
= 600V
I
C25
=
16A
V
CE(sat)typ
=
1.8V
2 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
3.3
5.0
S
Pulse test, t
300
m
s, duty cycle
2 %
I
C(on)
V
GE
= 15 V, V
CE
= 10 V
50
A
C
ies
920
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
65
pF
C
res
14
pF
Q
g
40
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
13
nC
Q
gc
18
nC
t
d(on)
30
ns
t
ri
30
ns
t
d(off)
100
420
ns
t
fi
310
470
ns
E
off
1.9
2.9
mJ
t
d(on)
30
ns
t
ri
30
ns
E
on
0.12
mJ
t
d(off)
150
ns
t
fi
510
ns
E
off
3.0
mJ
R
thJC
1.25 K/W
Inductive load, T
J
= 25
C
I
C
= 16A, V
GE
= 15 V, L = 300
m
H
V
CE
= 0.8 V
CES
, R
G
= 22
W
Switching times may increase for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
Inductive load, T
J
= 125
C
I
C
= 16 A, V
GE
= 15 V, L = 300
m
H
V
CE
= 0.8 V
CES
, R
G
= 22
W
Switching times may increase for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or
increased R
G
IXSH 16N60U1
Reverse Diode (FRED)
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Symbol
Test Conditions
min.
typ.
max.
V
F
I
F
= I
C90
, V
GE
= 0 V,
1.75
V
Pulse test, t
300
m
s, duty cycle d
2 %
I
RM
I
F
= I
C90
, V
GE
= 0 V, -di
F
/dt = 64 A/
m
s
2.5
A
t
rr
V
R
= 360 V
T
J
= 100
C
165
ns
I
F
= 1 A; -di/dt = 50 A/
m
s; V
R
= 30 V
T
J
= 25
C
35
50
ns
R
thJC
2.5 K/W
TO-247 AD (IXSH) Outline
Dim. Millimeter
Inches
Min.
Max.
Min.
Max.
A
19.81 20.32
0.780 0.800
B
20.80 21.46
0.819 0.845
C
15.75 16.26
0.610 0.640
D
3.55
3.65
0.140 0.144
E
4.32
5.49
0.170 0.216
F
5.4
6.2
0.212 0.244
G
1.65
2.13
0.065 0.084
H
-
4.5
-
0.177
J
1.0
1.4
0.040 0.055
K
10.8
11.0
0.426 0.433
L
4.7
5.3
0.185 0.209
M
0.4
0.8
0.016 0.031
N
1.5
2.49
0.087 0.102
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
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