2003 IXYS All rights reserved
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min.
Typ.
Max.
BV
CES
I
C
= 250
A, V
GE
= 0 V
1200
V
V
GE(th)
I
C
= 250
A, V
CE
= V
GE
2.5
5.0
V
I
CES
V
CE
= V
CES
T
J
= 25
C
100
A
V
GE
= 0 V
T
J
= 125
C
3.5
mA
I
GES
V
CE
= 0 V, V
GE
=
20 V
100
nA
V
CE(sat)
I
C
= I
CE90
, V
GE
= 15
3.8
V
T
J
= 125
C
3.0
V
IGBT
Lightspeed
Series
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
C to 150
C
1200
V
V
CGR
T
J
= 25
C to 150
C; R
GE
= 1 M
1200
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25
C
30
A
I
C90
T
C
= 90
C
15
A
I
CM
T
C
= 25
C, 1 ms
60
A
SSOA
V
GE
= 15 V, T
VJ
= 125
C, R
G
= 10
I
CM
= 40
A
(RBSOA)
Clamped inductive load
@ 0.8 V
CES
P
C
T
C
= 25
C
150
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
Maximum lead temperature for soldering
300
C
1.6 mm (0.062 in.) from case for 10 s
M
d
Mounting torque with screw M3
0.45/4 Nm/lb.in.
Mounting torque with screw M3.5
0.55/5 Nm/lb.in.
Weight
TO-220
4
g
TO-263
2
g
DS98632A(01/03)
Features
International standard packages
JEDEC TO-220AB and TO-263AA
Low switching losses
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
Easy to mount with one screw
Reduces assembly time and cost
High power density
G
E
C (TAB)
TO-263 AA (IXGA)
G C
E
TO-220AB (IXGP)
V
CES
=1200 V
I
C25
= 30 A
V
CE(sat)
= 3.8 V
t
fi(typ)
= 115 ns
IXGA 15N120C
IXGP 15N120C
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961
5,187,117
5,486,715
6,306,728B1
4,850,072
4,931,844
5,034,796
5,063,307
5,237,481
5,381,025
TO-263 AA Outline
1. Gate
2. Collector
3. Emitter
4. Collector
Bottom Side
Dim.
Millimeter
Inches
Min.
Max.
Min.
Max.
A
4.06
4.83
.160
.190
A1
2.03
2.79
.080
.110
b
0.51
0.99
.020
.039
b2
1.14
1.40
.045
.055
c
0.46
0.74
.018
.029
c2
1.14
1.40
.045
.055
D
8.64
9.65
.340
.380
D1
7.11
8.13
.280
.320
E
9.65
10.29
.380
.405
E1
6.86
8.13
.270
.320
e
2.54
BSC
.100
BSC
L
14.61
15.88
.575
.625
L1
2.29
2.79
.090
.110
L2
1.02
1.40
.040
.055
L3
1.27
1.78
.050
.070
L4
0
0.38
0
.015
R
0.46
0.74
.018
.029
Pins: 1 - Gate
2 - Collector
3 - Emitter
4 - Collector
Bottom Side
TO-220 AB Dimensions
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
C, unless otherwise specified)
Min. Typ.
Max.
g
fs
I
C
= I
C90
; V
CE
= 10 V,
12
15
S
Pulse test, t
300
s, duty cycle
2 %
C
ies
1720
pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
95
pF
C
res
35
pF
Q
g
69
nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
13
nC
Q
gc
26
nC
t
d(on)
25
ns
t
ri
15
ns
t
d(off)
150
200
ns
t
fi
115
190
ns
E
off
1.05
1.6
mJ
t
d(on)
25
ns
t
ri
18
ns
E
on
0.60
mJ
t
d(off)
220
ns
t
fi
250
ns
E
off
2.1
mJ
R
thJC
0.83
K/W
R
thCK
TO-220
0.5
K/W
Inductive load, T
J
= 25
C
I
C
= I
C90
, V
GE
= 15 V
V
CE
= 960 V, R
G
= R
off
= 10
Remarks: Switching
times
may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 125
C
I
C
= I
C90
, V
GE
= 15 V
V
CE
= 960 V, R
G
= R
off
= 10
Remarks: Switching times may
increase for V
CE
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
IXGA 15N120C
IXGP 15N120C
Min. Recommended Footprint
(Dimensions in inches and mm)
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