IXYS Corporation
3540 Bassett Street; Santa Clara, CA 95054
Tel: 408-982-0700; Fax: 408-496-0670
IXYS Semiconductor GmbH
POB 1180; D-68619; Lampertheim, Germany
Tel: +49-6206-5030; Fax: +49-6206-503627
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25C to 150C
1200
V
V
CGR
T
J
= 25C to 150C; R
GE
= 1 M
1200
V
V
GES
Continuous
20
V
V
GEM
Transient
30
V
I
C25
T
C
= 25C
30
A
I
C90
T
C
= 90C
15
A
I
CM
T
C
= 25C, 1 ms
60
A
SSOA
V
GE
= 15 V, T
J
= 125C, R
G
= 82
I
CM
= 30
A
(RBSOA)
Clamped inductive load, L = 100 H
@ 0.8 V
CES
t
sc
T
J
= 125C, V
CE
= 720 V; V
GE
= 15V, R
G
= 82
5
s
P
C
T
C
= 25C
150
W
T
J
-55 ... +150
C
T
JM
150
C
T
STG
-55 ... +150
C
M
d
Mounting torque
1.15/10 Nm/lb-in.
.
Weight
6
g
Max. Lead Temperature for
300
C
Soldering (1.6mm from case for 10s)
IGBT with Diode
"S" Series - Improved SCSOA Capability
IXSH15N120AU1
Features
High frequency IGBT with guaranteed
Short Circuit SOA capability.
IGBT with anti-parallel diode in one
package
2
nd
generation HDMOS
TM
process
Low V
CE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
Uninterruptible power supplies
(UPS)
Switched-mode and resonant-mode
power supplies
DC choppers
Advantages
Saves space (two devices in one
package)
Easy to mount (isolated mounting hole)
Reduces assembly time and cost
Operates cooler
Easier to assemble
E
G
C
C
E
G
TO-247AD
I
C25
=
30 A
V
CES
= 1200 V
V
CE(sat)
= 4.0 V
PRELIMINARY DATA SHEET
94522B(6/95)
1994 IXYS Corporation. All rights reserved.
Symbol
Test Conditions
Characteristic Values
(T
J
= 25C unless otherwise specified)
Min.
Typ. Max.
BV
CES
I
C
= 4.0 mA, V
GE
= 0 V
1200
V
V
GE(th)
I
C
= 1.5 mA, V
CE
= V
GE
4
8
V
I
CES
V
CE
= 0.8 V
CES
, V
GE
= 0 V
T
J
= 25C
500 A
Note 2
T
J
= 125C
8 mA
I
GES
V
CE
= 0 V, V
GE
= 20 V
+ 100 nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
4.0
V
IXYS Corporation
3540 Bassett Street; Santa Clara, CA 95054
Tel: 408-982-0700; Fax: 408-496-0670
IXYS Semiconductor GmbH
POB 1180; D-68619; Lampertheim, Germany
Tel: +49-6206-5030; Fax: +49-6206-503627
g
fs
I
C
= I
C90
,
V
CE
= 10 V,
6
7
S
Pulse test, t < 300 s, duty cycle
< 2 %
I
C(on)
V
GE
= 15V, V
CE
= 10 V
65
A
C
ies
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
1800
pF
C
oes
160
pF
C
res
45
pF
Q
g
I
C
= I
c90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
75
nC
Q
ge
20
nC
Q
gc
35
nC
t
d(on)
Inductive load, T
J
= 25C
100
ns
t
ri
I
C
= I
C90
, V
GE
= 15 V, L = 100H
200
ns
t
d(off)
R
G
= 82
, V
CLAMP
= 0.8 V
CES
450
ns
t
fi
Note 1
600
ns
t
c
750
ns
E
off
5.4
mJ
t
d(on)
Inductive load, T
J
= 125C
100
ns
t
ri
I
C
= I
C90,
V
GE
= 15 V, L = 100H
200
ns
E
(on)
R
G
= 82
TBD
mJ
t
d(off)
V
CLAMP
= 0.8 V
CES
ns
t
fi
Note 1
900
ns
t
c
1200
ns
E
off
14.5
mJ
R
thJC
0.83 K/W
R
thCK
0.25
K/W
Reverse Diode (FRED)
Characteristic Values
(TJ = 25C unless otherwise specified)
Min. Typ. Max.
V
F
I
F
= I
C90
, V
GE
= 0V
2.3
V
Pulse test, t< 300 s, duty cycle < 2%
T
J
= 125C
2.1
t
rr
I
F
= 1A; di/dt = -100A/s; V
R
= 30V;
T
J
= 25C
40
60
ns
I
RM
I
F
= I
C90
, V
GE
= 0V, -di
F
/dt = 240 A/s
16
18
A
t
rr
T
J
= 100C, V
R
= 540V
300
ns
R
thJC
1.0 K/W
Notes:
1) Switching times may increase for V
CE
(Clamp) > 0.8 V
CES
, higher T
J
or R
G
values.
2) Device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway.
IXYS reserves the right to change limits, test conditions and dimensions.
Symbol
Test Conditions
Characteristic Values
(T
J
= 25C unless otherwise specified)
Min Typ.
Max.
IXSH15N120AU1
TO-247AD (IXSH)
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