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Электронный компонент: ILQ1

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ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
1/4/03
0.5
7.62
7.0
6.0
1.2
10.16
9.16
7.0
6.0
7.62
1.2
13
Max
0.5
2.54
0.5
0.26
0.5
3
4
1
5
8
2
1
3
4
6
Dimensions in mm
HIGH DENSITY
PHOTOTRANSISTOR OPTICALLY
COUPLED ISOLATORS
7.0
6.0
1.2
7.62
3.0
0.5
0.26
2.54
0.5
0.26
13
Max
3.0
13
Max
3.35
4.0
3.0
3.0
20.32
19.32
4.0
3.0
4.0
3.0
3.35
3.35
2.54
3
6
4
5
2
7
14
15
1
8
7.62
6.62
2
5
16
13
12
11
6
10
7
9
IL1, IL2, IL5, IL74
ILD1, ILD2, ILD5, ILD74
ILQ1, ILQ2, ILQ5, ILQ74
IL1
IL2
IL5
IL74
ILD1
ILD2
ILD5
ILD74
ILQ1
ILQ2
ILQ5
ILQ74
OPTION G
7.62
SURFACE MOUNT
OPTION SM
10.16
0.26
DB91088m-AAS/A6
ISOCOM INC
1024 S. Greenville Ave, Suite 240,
Allen, TX 75002 USA
Tel: (214) 495-0755 Fax: (214) 495-0901
e-mail info@isocom.com
http://www.isocom.com
10.46
9.86
0.6
0.1
1.25
0.75
APPROVALS
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UL recognised, File No. E91231
IL* Package 'FF' (marked I_ _ _ FF)
ILD*/ILQ* Package 'GG' (marked I_ _ _ GG)
'X' SPECIFICATION APPROVALS
Add 'X' after part number
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VDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
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BSI approved - Certificate No. 8001
DESCRIPTION
The IL*, ILD*, ILQ* series of optically coupled
isolators consist of infrared light emitting diodes
and NPN silicon photo transistors in space
efficient dual in line plastic packages.
FEATURES
l
Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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Three package types
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High Current Transfer Ratio (50% min)
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High Isolation Voltage (5.3kV
RMS
,7.5kV
PK
)
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High BV
CEO
(70V min)
IL2, ILD2, ILQ2, IL5, ILD5, ILQ5
APPLICATIONS
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Computer terminals
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Industrial systems controllers
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Measuring instruments
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Signal transmission between systems of
different potentials and impedances
Input
Forward Voltage (V
F
)
1.2
1.65
V
I
F
= 50mA
Reverse Current (I
R
)
10
A
V
R
= 4V
Output
Collector-emitter Breakdown (BV
CEO
)
IL2, ILD2, ILQ2, IL5, ILD5, ILQ5
70
V
I
C
= 1mA , ( Note 2 )
IL1, ILD1, ILQ1, IL74, ILD74, ILQ74
50
V
I
C
= 1mA , ( Note 2 )
Emitter-collector Breakdown (BV
ECO
)
6
V
I
E
= 100
A
Collector-emitter Dark Current (I
CEO
)
50
nA
V
CE
= 10V
Coupled
Current Transfer Ratio (CTR) (Note 2)
IL1, ILD1, ILQ1
20
300
%
10mA I
F
, 10V V
CE
IL2, ILD2, ILQ2
100
500
%
10mA I
F
, 10V V
CE
IL5, ILD5, ILQ5
50
400
%
10mA I
F
, 10V V
CE
IL74, ILD74, ILQ74
12.5
%
16mA I
F
, 5V V
CE
Saturated Current Transfer Ratio
IL1, ILD1, ILQ1
75
%
10mA I
F
, 0.4V V
CE
IL2, ILD2, ILQ2
170
%
10mA I
F
, 0.4V V
CE
IL5, ILD5, ILQ5
100
%
10mA I
F
, 0.4V V
CE
IL74, ILD74, ILQ74
12.5
%
16mA I
F
, 0.5V V
CE
Collector-emitter Saturation Voltage,V
CE (SAT)
0.4
V
16mA I
F
, 2mA I
C
Input to Output Isolation Voltage V
ISO
5300
V
RMS
See note 1
Input to Output Isolation Voltage V
ISO
7500
V
PK
See note 1
Input-output Isolation Resistance R
ISO
5x10
10
V
IO
= 500V (note 1)
Output Rise Time
tr
2
s
I
F
= 10mA
Output Fall Time
tf
2
s
V
CC
= 5V, R
L
= 75
PARAMETER
MIN TYP MAX UNITS TEST CONDITION
Note 1
Measured with input leads shorted together and output leads shorted together.
Note 2
Special Selections are available on request. Please consult the factory.
1/4/03
ELECTRICAL CHARACTERISTICS ( T
A
= 25C Unless otherwise noted )
ABSOLUTE MAXIMUM RATINGS
(25C unless otherwise specified)
Storage Temperature
-40C to + 125C
Operating Temperature
-25C to + 100C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260C
INPUT DIODE
Forward Current
50mA
Reverse Voltage
6V
Power Dissipation
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
IL2,ILD2,ILQ2,IL5,ILD5,ILQ5
70V
IL1,ILD1,ILQ1,IL74,ILD74,ILQ74
50V
Emitter-collector Voltage BV
ECO
6V
Power Dissipation
150mW
POWER DISSIPATION
Total Power Dissipation
170mW
(derate linearly 2.67mW/C above 25C)
DB91088m-AAS/A6
DB91088m-AAS/A6
1/4/03
50
Ambient temperature T
A
( C )
150
0
200
Ambient temperature T
A
( C )
Collector power dissipation P
C
(mW)
60
30
20
10
0
40
50
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
Ambient temperature T
A
( C )
100
0
0.5
1.0
1.5
I
F
= 10mA
V
CE
= 10V
Forward current
I
F
(mA)
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
-30 0 25 50 75 100 125
-30 0 25 50 75 100 125
-30 0 25 50 75 100
1 2 5 10 20 50
0
0.4
0.6
0.8
1.0
1.2
0.2
1.4
V
CE
= 10V
T
A
= 25C
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Forward Current
Forward current I
F
(mA)
Ambient temperature T
A
( C )
0
0.5
1.0
1.5
I
F
= 10mA
V
CE
= 0.4V
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
-30 0 25 50 75 100
1 2 5 10 20 50
0
1.2
1.6
2.0
2.4
2.8
V
CE
= 0.4V
T
A
= 25C
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Forward Current
Forward current I
F
(mA)
0.8
0.4
01/04/03
DB91088m-AAS/A6



Fig.1 Forword Current
Fig.2 Collector Power Dissiption
vs. Ambient Temperature
Fig.4 Forward Current vs. Forward
Fig.5 Current Transfer Ratio vs.
Forward Current
Fig.6 Collector Current vs.
Collector-emitter Voltage
F
F
CE
F
F
0
-25
Ta= 75 C
50 C
25 C
0 C
-25 C
V = 5V
Ta= 25 C
CE
Ta= 25 C
I = 30mA
Pc(MAX.)
5mA
F
10mA
20mA
vs. Ambient Temperatute
Collector-emitter voltage V (V)
Forward voltage V (V)
Ambient temperature Ta ( C)
Ambient temperature Ta ( C)
Forward current I (mA)
F
o
rw
a
r
d
c
u
rrent

I
(
m
A
)
Co
l
l
e
c
t
o
r
P
o
w
e
r
d
i
s
s
ip
a
t
io
n

P
c

(
m
W
)
F
o
rw
a
r
d
c
u
rrent

I
(
m
A
)
C
u
rren
t

t
r
a
n
s
f
er
rat
i
o
C
T
R
(%
)
C
o
l
l
ec
t
o
r c
u
rr
e
n
t
I
c

(
m
A
)
Fig.3 Collector-emitter Saturation
Voltage vs. Forward Current
F
CE
Ic
=
0
.
5
m
A
1m
A
3m
A
7m
A
5m
A
Ta= 25 C
C
o
ll
e
c
otr
-
e
m
i
tte
r
s
a
tu
r
a
ti
on
v
o
l
t
a
g
e
V
(
s
a
t
)
(V
)
Forward current I (mA)
Voltage
o
o
o
O
o
o
o
o
o
o
0
25
50
75
100
125
10
20
30
40
50
60
0
50
100
150
200
0
1
0
0
15
1
2
3
4
5
6
0.5
1.0
1.5
2.0
2.5
3.0
2
5
10
20
50
100
200
500
0
1
0
0
2
5
10
20
50
20
40
60
80
100
120
140
160
180
200
1
2
3
4
5
6
7
8
9
10
20
30
10
5
5
15
25
-25
0
50
25
75
100
125


01/04/03
DB91088m-AAS/A6



R = 10k
L
1k
100
tr
tf
td
ts
Fig.8 Collector-emitter Saturation Voltage
Fig.9 Collector Dark Current vs.
Ambient Temperature
Fig.10 Response Time vs. Load
Fig.11 Frequency Response
L
CE
O
0
-30
CE
V = 5V
Ic= 2mA
Ta= 25 C
CE
I = 5mA
V = 5V
CE
F
F
Ic= 1mA
I = 20mA
CE
V = 2V
Ic= 2mA
Ta= 25 C
vs. Ambient Temperature
Ambient temperature Ta ( C)
Load resistance R (k )
Ambient temperature Ta ( C)
Ambient temperature Ta ( C)
Frequency f (kHz)
R
e
sp
o
n
s
e

tim
e
(
s)
R
e
l
a
ti
v
e
c
u
r
r
e
nt
tr
a
n
s
f
e
r
r
a
t
i
o

(%
)
Co
lle
c
t
o
r

d
a
r
k
c
u
r
r
e
n
t
I

(
A
)
V
o
l
t
ag
e g
a
i
n
A
v

(d
B
)
C
o
l
l
e
c
t
o
r
-e
m
i
tte
r
sa
tu
r
a
ti
on v
o
l
t
a
g
e
V

(s
at)
(V
)
-10
o
o
o
o
o
0
25
50
75
100
50
100
150
-25
0
0
25
50
75
100
10
-25
0.2
0.05
0
25
50
75
100
10
10
10
10
10
10
-9
-8
-7
-6
-5
-11
0.1 0.2
0.5
1
2
5
10
0.5
1
2
5
10
20
50
100
200
500
0.5
-10
0
1000
Resistance
Fig.7 Relative Current Transfer Ratio
vs. Ambient Temperature
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
CE
V = 20V
1
2
5 10 20
100
500
-5
-20
-15
Test Circuit for Response Time
Test Circuit for Frequency Response
Input
R
D
Input
ts
Output
R
D
R
Output
Vcc
R
L
tr
Vcc
L
td
tf
10%
90%
Output