DESCRIPTION
2SC5726 is a mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for high frequency application.
.
FEATURE
High gain bandwidth product.
fT=10.0GHz
High gain, low noise.
Can operate at low voltage.
Super mini package for easy mounting
APPLICATION
For TV tuners, high frequency amplifier , celluar phone system.
SMALL-SIGNAL TRANSISTOR
PRELIMINARY
2SC5726
Notics:This is not a final specification. FOR HIGH FREQUENCY AMPLIFY APPLICATION
Some parametric limits are subject to change. SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
Unit
MAXIMUM RATINGS
Ta=25
Symbol
Parameter
Ratings
Unit
V
CBO
Collector to Base voltage
15
V
V
CEO
Collector to Emitter voltage
6
V
V
EBO
Emitter to Base voltage
1.5
V
I
O
Collector current
50
mA
P
c
Collector dissipation
150
mW
T
j
Junction temperature
125
T
stg
Storage temperature
-55125
ELECTRICAL CHARACTERISTICS
Ta=25
Limits
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Collector cut off current
I
CBO
V
CB
=10V, I
E
=0mA
-
-
1.0
A
Emitter cut off current
I
EBO
V
EB
=1V, I
C
=0mA
-
-
1.0
A
DC forward current gain
hFE
V
CE
=3V, I
C
=10mA
30
-
250
Gain bandwidth product
fT
V
CE
=3V, I
E
=10mA
-
10.0
-
GHz
Collector output capacitance
Cob
V
CB
=3V, I
E
=0mA,f=1MHz
-
0.7
-
pF
Insertion power gain
|S
21
|
2
V
CE
=3V, I
C
=10mA,f=1GHz
10.0
13.0
-
dB
Noise figure
NF
V
CE
=3V, I
C
=5mA,f=1GHz
-
1.4
-
dB
JEITASC-59
TERMINAL CONNECTER
BASE
EMITTER
COLLECTOR
0
0.1
0.8
1.1
0.4
0.5
1.5
0.5
2.5
0.95
0.95
1.90
2.9
ISAHAYA ELECTRONICSCORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Jan.2003
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