I
T(AV)
50
70
90
A
@ T
C
70
70
70
o
C
I
T(RMS)
80
110
141
A
I
TSM
@
50Hz
1310
1660
1780
A
@ 60Hz
1370
1740
1870
A
I
2
t
@ 50Hz
8550
13860
15900
A
2
s
@ 60Hz
7800
12650
14500
A
2
s
I
2
t
85500
138500
159100
A
2
s
V
DRM
/V
RRM
100 to 1200
V
T
J
-40 to 125
o
C
Parameters T50RIA
T70RIA T90RIA
Units
Major Ratings and Characteristics
Features
Electrically isolated base plate
Types up to 1200 V
RRM
3500 V
RMS
isolating voltage
Simplified mechanical designs,
rapid assembly
High surge capability
Large creepage distances
UL E78996 approved
These series of T-modules are inteded for general
purpose applications such as battery chargers,
welders and plating equipment, regulated power
supplies and temperature and speed control circuits.
The semiconductors are electrically isolated from the
metal base, allowing common heatsinks and compact
assemblies to be built.
Description
MEDIUM POWER PHASE CONTROL THYRISTORS
Power Modules
50 A
70 A
90 A
T..RIA SERIES
1
Bulletin I27105 rev. B 02/02
www.irf.com
T..RIA Series
2
Bulletin I27105 rev. B 02/02
www.irf.com
I
T(AV)
Max. average on-state current
50
70
90
A
180 conduction, half sine wave
@ Case temperature
70
70
70
C
I
T(RMS)
Max. RMS on-state current
80
110
141
A
I
TSM
Maximum peak, one-cycle
1310
1660
1780
A
t = 10ms No voltage
on-state, non-repetitive
1370
1740
1870
t = 8.3ms reapplied
surge current
1100
1400
1500
t = 10ms 100% V
RRM
1150
1460
1570
t = 8.3ms reapplied
Sine half wave,
I
2
t
Maximum I
2
t for fusing
8550
13860
15900
A
2
s
t = 10ms No voltage
Initial T
J
= T
J
max.
7800
12650
14500
t = 8.3ms reapplied
6050
9800
11250
t = 10ms 100% V
RRM
5520
8950
10270
t = 8.3ms reapplied
I
2
t
Maximum I
2
t for fusing
85500
138500
159100
A
2
s
t = 0.1 to 10ms, no voltage reapplied
V
T(TO)1
Low level value of threshold
0.97
0.77
0.78
V
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), @ T
J
max.
voltage
V
T(TO)2
High level value of threshold
1.13
0.88
0.88
(I >
x I
T(AV)
), @ T
J
max.
voltage
r
t1
Low level value on-state
4.1
3.6
2.9
m
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), @ T
J
max.
slope resistance
r
t2
High level value on-state
3.3
3.2
2.6
(I >
x I
T(AV)
), @ T
J
max.
slope resistance
V
TM
Maximum on-state voltage drop
1.60
1.55
1.55
V
I
TM
=
x I
T(AV)
, T
J
= 25C., tp = 400s square
Av. power = V
T(TO)
x I
T(AV)
+ r
f
x (I
T(RMS)
)
2
I
H
Maximum holding current
200
mA
Anode supply = 6V initial I
T
= 30A, T
J
= 25C
I
L
Maximum latching current
400
mA
Anode supply = 6V resistive load = 10
gate pulse: 10V, 100s, T
J
= 25C
t
gd
Typical turn-on time
0.9
s
T
J
= 25
o
C Vd = 50% V
DRM
, I
TM
= 50 A
I
g
= 500mA, tr <= 0.5, tp >= 6s
t
rr
Typical reverse recovery time
3.0
s
T
J
=125C, I
TM
= 50A tp = 300s di/dt =10A/s
t
q
Typical turn-off time
110
s
T
J
= T
J
max., I
TM
= 50A, tp = 300s,
-di/dt = 15A/s, V
r
= 100V; linear to 80%V
DRM
Parameter
T50RIA
T70RIA
T90RIA
Units Conditions
On-state Conduction
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage V
DRM
/V
RRM
, maximum repetitive V
RSM
, maximum non-repetitive
I
DRM
/I
RRM
max.
Code
peak reverse voltage
peak reverse voltage
@ 25C
V
V
A
10
100
150
20
200
300
T50RIA
40
400
500
T70RIA
60
600
700
100
T90RIA
80
800
900
100
1000
1100
120
1200
1300
Switching
Parameter
T50RIA
T70RIA
T90RIA
Units Conditions
T..RIA Series
3
Bulletin I27105 rev. B 02/02
www.irf.com
T
J
Max. junction operating
-40 to 125
C
temperature range
T
stg
Max. storage temperature
-40 to 150
C
range
R
thJC
Max. thermal resistance,
0.65
0.50
0.38
K/W
DC operation, per junction
junction to case
R
thCS
Max. thermal resistance,
0.2
K/W
Mounting surface smooth, flat and greased
case to heatsink
T
Mounting
to heatsink
1.3 10%
Nm
M3.5 mounting screws (2)
torque 10%
terminals
3 10%
M5 screw terminals
wt
Approximate weight
54
g
See outline table
Case style
D-56
T type
I
RRM
Maximum peak reverse and
15
mA
T
J
= T
J
= T
J
max.
I
DRM
off-state leakage current
V
INS
RMS isolation voltage
3500
V
50Hz, circuit to base, all terminals shorted,
T
J
= 25C, t = 1s
dv/
dt
Critical rate of rise of off-state
500
V/s
T
J
= T
J
max., linear to 80% rated V
DRM
(1)
voltage
Blocking
Thermal and Mechanical Specifications
(2) A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the
spread of the compound.
Parameter
T50RIA
T70RIA
T90RIA
Units Conditions
Parameter
T50RIA
T70RIA
T90RIA
Units Conditions
Triggering
P
GM
Max. peak gate power
10
12
12
W
tp
5ms, T
J
= T
J
max.
P
G(AV)
Max. average gate power
2.5
3.0
3.0
W
f=50Hz, T
J
= T
J
max.
I
GM
Max. peak gate current
2.5
3.0
3.0
A
tp
5ms, T
J
= T
J
max.
-V
GT
Max. peak negative
10
10
10
V
gate voltage
V
GT
Max. required DC gate
4.0
4.0
4.0
V
T
J
= - 40C
Anode supply = 6V, resistive
voltage to trigger
2.5
2.5
2.5
T
J
= 25C
load; Ra = 1
1.5
1.5
1.5
T
J
= T
J
max.
I
GT
Max. required DC gate
250
270
270
T
J
= - 40C
Anode supply = 6V, resistive
current to trigger
100
120
120
mA
T
J
= 25C
load; Ra = 1
50
60
60
T
J
= T
J
max.
V
GD
Max. gate voltage
0.2
0.2
0.2
V
@ T
J
= T
J
max., rated V
DRM
applied
that will not trigger
I
GD
Max. gate current
5.0
6.0
6.0
mA
that will not trigger
di/
dt
Max. rate of rise of
200
A/s
V
D
= 0.67 rated V
DRM
, I
TM
= 2 x rated di/dt
turned-on current
180
I
g
= 400mA for T50RIA and I
g
= 500mA for
160
T70RIA & T90RIA; tr < 0.5s, tp >= 6s
150
For repetitive value use 40% non-repetitive
Per JEDEC std. RS397,5.2.2.6
Parameter
T50RIA
T70RIA
T90RIA
Units Conditions
non lubricated
threads
(1) Available with dv/dt = 1000V/
s, to complete code add S90 i.e. T90RIA80S90
T..RIA Series
4
Bulletin I27105 rev. B 02/02
www.irf.com
Sinusoidal conduction @ T
J
max.
Rectangular conduction @ T
J
max.
Devices
Units
180
o
120
o
90
o
60
o
30
o
180
o
120
o
90
o
60
o
30
o
T50RIA
0.08
0.10
0.13
0.19
0.31
0.06
0.10
0.14
0.20
0.32 K/W
T70RIA
0.07
0.08
0.10
0.14
0.24
0.05
0.08
0.11
0.15
0.24
T90RIA
0.05
0.06
0.08
0.12
0.20
0.04
0.06
0.09
0.12
0.20
R Conduction (per Junction)
(The following table shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC)
All dimensions in millimeters (inches)
Outline Table
Device Code
1
T
50
RIA
120
Circuit configuration **
2
3
4
1
-
Module type
2
-
Current rating
3
-
Circuit configuration **
4
-
Voltage code : code x 10 = V
RRM
Ordering Information Table
G
+
-
T..RIA Series
5
Bulletin I27105 rev. B 02/02
www.irf.com
Fig. 4 - On-state Power Loss Characteristics
Fig. 3 - On-state Power Loss Characteristics
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
50
60
70
80
90
100
110
120
130
0
10
20
30
40
50
60
70
80
DC
30
60
90
120
180
Average On-s tate Current (A)
M
a
x
i
mu
m A
l
l
o
w
a
b
l
e
C
a
s
e
T
e
m
p
e
r
at
u
r
e
(
C
)
Conduction P eriod
T 50R IA.. S eries
R (DC) = 0.65 K /W
thJC
0
20
40
60
80
100
120
Maximum Allowable Ambient T emperature ( C)
0.3
K
/W
10 K/W
5 K /W
3 K/W
2 K
/W
1.5
K /W
1 K
/W
0.7
K
/W
0.5
K
/W
R
=
0
.1
K
/W
- D
elt
a
R
th
S
A
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
R MS L imit
Conduction Angle
180
120
90
60
30
M
a
x
i
mu
m A
v
e
r
ag
e
O
n
-
s
t
a
t
e
P
o
w
e
r
L
o
s
s
(
W
)
Average On-s tate Current (A)
T 50R IA.. S eries
T = 125 C
J
0
20
40
60
80
100
120
Max imum Allowable Ambient T emperature ( C)
R
= 0.
1
K
/W
- D
el
ta
R
th
S
A
5 K /W
3 K/W
2 K/W
1.5 K
/W
1 K
/W
0.7
K/W
0.5
K/W
0.3
K
/W
0
10
20
30
40
50
60
70
80
90
10 0
11 0
0
10
20
30
40
50
60
70
80
DC
1 80
1 20
90
60
30
R MS L imit
Conduction P eriod
M
a
x
i
m
u
m
A
v
e
r
a
g
e
On
-
s
ta
te
P
o
w
e
r
L
o
s
s
(
W
)
Average On-s tate Current (A)
T 5 0R IA.. S eries
T = 125 C
J
50
60
70
80
90
10 0
11 0
12 0
13 0
0
10
20
30
40
50
60
30
60
90
1 20
1 80
Average On-s tate Current (A)
M
a
x
i
mu
m A
l
l
o
w
a
b
l
e
C
a
s
e
T
e
m
p
er
a
t
u
r
e (
C
)
Conduction Angle
T 50R IA.. S eries
R (DC) = 0.65 K /W
thJC
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