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Электронный компонент: ST730C16L1

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Features
Center amplifying gate
Metal case with ceramic insulator
International standard case TO-200AC (B-PUK)
Typical Applications
DC motor controls
Controlled DC power supplies
AC controllers
I
T(AV)
990
A
@ T
hs
55
C
I
T(RMS)
2000
A
@ T
hs
25
C
I
TSM
@
50Hz
17800
A
@ 60Hz
18700
A
I
2
t
@
50Hz
1591
KA
2
s
@ 60Hz
1452
KA
2
s
V
DRM
/V
RRM
800 to 2000
V
t
q
typical
150
s
T
J
- 40 to 125
C
Parameters
ST730C..L
Units
Major Ratings and Characteristics
case style TO-200AC (B-PUK)
990A
PHASE CONTROL THYRISTORS
Hockey Puk Version
ST730C..L SERIES
1
Bulletin I25191 rev. D 04/03
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ST730C..L Series
2
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Bulletin I25191 rev. D 04/03
di/dt
Max. non-repetitive rate of rise
Gate drive 20V, 20
, t
r
1s
of turned-on current
T
J
= T
J
max, anode voltage
80% V
DRM
Gate current 1A, di
g
/dt = 1A/s
V
d
= 0.67% V
DRM
,
T
J
= 25C
I
TM
= 750A, T
J
= T
J
max, di/dt
= 60A/s, V
R
= 50V
dv/dt
= 20V/s, Gate 0V 100
,
t
p
= 500s
Parameter
ST730C..L
Units Conditions
Switching
1000
A/s
t
d
Typical delay time
1.0
t
q
Typical turn-off time
150
s
Voltage
V
DRM
/V
RRM
, max. repetitive
V
RSM
, maximum non-
I
DRM
/I
RRM
max.
Type number
Code
peak and off-state voltage
repetitive peak voltage
@ T
J
= T
J
max
V
V
mA
08
800
900
12
1200
1300
ST730C..L
14
1400
1500
80
16
1600
1700
18
1800
1900
20
2000
2100
ELECTRICAL SPECIFICATIONS
Voltage Ratings
I
T(AV)
Max. average on-state current
990 (375)
A
180 conduction, half sine wave
@ Heatsink temperature
55 (85)
C
double side (single side) cooled
I
T(RMS)
Max. RMS on-state current
2000
DC @ 25C heatsink temperature double side cooled
I
TSM
Max. peak, one-cycle
17800
t = 10ms
No voltage
non-repetitive surge current
18700
A
t = 8.3ms
reapplied
15000
t = 10ms
100% V
RRM
15700
t = 8.3ms
reapplied
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
1591
t = 10ms
No voltage
Initial T
J
= T
J
max.
1452
t = 8.3ms
reapplied
1125
t = 10ms
100% V
RRM
1027
t = 8.3ms
reapplied
I
2
t
Maximum I
2
t for fusing
15910
KA
2
s
t = 0.1 to 10ms, no voltage reapplied
V
T(TO)
1
Low level value of threshold
voltage
V
T(TO)
2
High level value of threshold
voltage
r
t1
Low level value of on-state
slope resistance
r
t2
High level value of on-state
slope resistance
V
TM
Max. on-state voltage
1.62
V
I
pk
= 2000A, T
J
= T
J
max, t
p
= 10ms sine pulse
I
H
Maximum holding current
600
I
L
Typical latching current
1000
0.98
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
0.32
(16.7% x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
max.
0.27
(I >
x I
T(AV)
),T
J
= T
J
max.
Parameter
ST730C..L
Units Conditions
1.12
(I >
x I
T(AV)
),T
J
= T
J
max.
On-state Conduction
KA
2
s
V
m
mA
T
J
= 25C, anode supply 12V resistive load
ST730C..L Series
3
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Bulletin I25191 rev. D 04/03
dv/dt
Maximum critical rate of rise of
off-state voltage
I
DRM
Max. peak reverse and off-state
I
RRM
leakage current
Blocking
500
V/
s
T
J
= T
J
max. linear to 80% rated V
DRM
Parameter
ST730C..L
Units Conditions
80
mA
T
J
= T
J
max, rated V
DRM
/V
RRM
applied
P
GM
Maximum peak gate power
10.0
T
J
= T
J
max, t
p
5ms
P
G(AV)
Maximum average gate power
2.0
T
J
= T
J
max, f = 50Hz, d% = 50
I
GM
Max. peak positive gate current
3.0
A
T
J
= T
J
max, t
p
5ms
+V
GM
Maximum peak positive
gate voltage
-V
GM
Maximum peak negative
gate voltage
T
J
= - 40C
mA
T
J
= 25C
T
J
= 125C
T
J
= - 40C
V
T
J
= 25C
T
J
= 125C
I
GD
DC gate current not to trigger
10
mA
Parameter
ST730C..L
Units Conditions
20
5.0
Triggering
TYP.
MAX.
200
-
100
200
50
-
2.5
-
1.8
3.0
1.1
-
V
GD
DC gate voltage not to trigger
0.25
V
Max. gate current/voltage not to
trigger is the max. value which
will not trigger any unit with rated
V
DRM
anode-to-cathode applied
T
J
= T
J
max
Max. required gate trigger/ cur-
rent/ voltage are the lowest value
which will trigger all units 12V
anode-to-cathode applied
V
GT
DC gate voltage required
to trigger
I
GT
DC gate current required
to trigger
W
V
T
J
= T
J
max, t
p
5ms
T
J
Max. operating temperature range
-40 to 125
T
stg
Max. storage temperature range
-40 to 150
R
thJ-hs
Max. thermal resistance,
0.073
DC operation single side cooled
junction to heatsink
0.031
DC operation double side cooled
R
thC-hs
Max. thermal resistance,
0.011
DC operation single side cooled
case to heatsink
0.006
DC operation double side cooled
F
Mounting force, 10%
14700
N
(1500)
(Kg)
wt
Approximate weight
255
g
Parameter
ST730C..L
Units Conditions
K/W
C
Case style
TO - 200AC (B-PUK)
See Outline Table
K/W
Thermal and Mechanical Specification
ST730C..L Series
4
www.irf.com
Bulletin I25191 rev. D 04/03
1
-
Thyristor
2
-
Essential part number
3
-
0 = Converter grade
4
-
C = Ceramic Puk
5
-
Voltage code: Code x 100 = V
RRM
(See Voltage Rating Table)
6
-
L = Puk Case TO-200AC (B-PUK)
7
-
0 = Eyelet terminals (Gate and Auxiliary Cathode Unsoldered Leads)
1 = Fast-on terminals (Gate and Auxiliary Cathode Unsoldered Leads)
2 = Eyelet terminals (Gate and Auxiliary Cathode Soldered Leads)
3 = Fast-on terminals (Gate and Auxiliary Cathode Soldered Leads)
8
-
Critical dv/dt: None = 500V/sec (Standard selection)
L
= 1000V/sec (Special selection)
Ordering Information Table
Single Side Double Side Single Side Double Side
180
0.009
0.009
0.006
0.006
120
0.011
0.011
0.010
0.011
90
0.014
0.014
0.015
0.015
K/W
T
J
= T
J
max.
60
0.020
0.020
0.021
0.021
30
0.036
0.036
0.036
0.036
Sinusoidal conduction Rectangular conduction
Conduction angle
Units
Conditions
Device Code
5
1
2
3
4
ST 73
0
C
20
L
1
7
6
8
R
thJ-hs
Conduction
(The following table shows the increment of thermal resistence R
thJ-hs
when devices operate at different conduction angles than DC)
ST730C..L Series
5
www.irf.com
Bulletin I25191 rev. D 04/03
Outline Table
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
20
30
40
50
60
70
80
90
100
110
120
130
0
200
400
600
800
1000 1200
DC
30
60
90
120
180
Average On-state Current (A)
Conduc tion Period
Ma
x
i
m
u
m
Al
l
o
w
a
b
l
e
H
e
a
t
s
i
nk
T
e
m
p
er
a
t
u
r
e
(

C)
ST730C..L Series
(Single Side Cooled)
R (DC) = 0.073 K/ W
thJ-hs
40
50
60
70
80
90
100
110
120
130
0
100 200 300 400 500 600 700
30
60
90
120
180
Average On-state Current (A)
Conduction Angle
Ma
x
i
m
u
m A
l
l
o
w
a
b
l
e
H
e
a
t
s
i
n
k
T
e
mp
er
a
t
u
r
e
(

C
)
ST730C..L Series
(Single Side Cooled)
R (DC) = 0.073 K/ W
thJ-hs
Case Style TO-200AC (B-PUK)
All dimensions in millimeters (inches)
TWO PLACES
PIN RECEPTACLE
AMP. 60598-1
0.7 (0.03) MIN.
34 (1.34) DIA. MAX.
53 (2.09) DIA. MAX.
5
8
.5
(2
.3
) D
I
A
.
M
A
X
.



2 HOLES DIA. 3.5 (0.14) x
2.5 (0.1) DEEP
4.7 (0.18)
27 (
1
.
0
6)

M
A
X
.
0.7 (0.03) MIN.
6.2 (0.24) MIN.
20 5
36.5 (1.44)
CREPAGE DISTANCE 36.33 (1.430) MIN.
STRIKE DISTANCE 17.43 (0.686) MIN.
ST730C..L Series
6
www.irf.com
Bulletin I25191 rev. D 04/03
7000
8000
9000
10000
11000
12000
13000
14000
15000
16000
1
10
100
Numb er Of Eq ual Amplitud e Half Cycle Current Pulses (N)
P
e
a
k
H
a
l
f

S
i
ne
W
a
v
e
O
n
-
s
t
a
t
e
C
u
r
r
ent
(A
)
Initial T = 125C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
ST730C..L Series
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
20
30
40
50
60
70
80
90
100
110
120
130
0
200 400 600 800 1000 1200 1400
30
60
90
120
180
Average On-state Current (A)
Conduction Angle
M
a
x
i
m
u
m
A
l
l
o
w
a
bl
e
H
e
ats
i
n
k
T
e
mpe
r
atu
r
e
(

C
)
ST730C..L Series
(Double Side Cooled)
R (DC) = 0.031 K/ W
thJ-hs
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
20
30
40
50
60
70
80
90
100
110
120
130
0
400
800
1200 1600 2000 2400
DC
30
60
90
120
180
Average On-state Current (A)
Conduction Period
M
a
x
i
mu
m A
l
l
o
w
a
b
l
e
H
e
a
t
s
i
n
k
T
em
p
e
r
a
t
u
r
e
(

C
)
ST730C..L Series
(Double Side Cooled)
R (DC) = 0.031 K/ W
thJ-hs
0
500
1000
1500
2000
2500
0
200 400 600 800 1000 1200 1400
180
120
90
60
30
RMS Limit
Conduc tion Angle
M
a
x
i
m
u
m
A
v
e
r
a
g
e
O
n
-s
t
a
t
e
P
o
w
e
r L
o
s
s
(
W
)
Average On-state Current (A)
ST730C..L Series
T = 125C
J
0
500
1000
1500
2000
2500
3000
3500
0
400
800
1200 1600 2000 2400
DC
180
120
90
60
30
RMS Limit
Conduction Period
Ma
x
i
m
u
m
A
v
er
a
g
e
O
n
-
s
t
a
t
e
P
o
w
e
r

L
o
s
s
(
W
)
Average On-state Current (A)
ST730C..L Series
T = 125C
J
Fig. 5- On-state Power Loss Characteristics
Fig. 6- On-state Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
7000
8000
9000
10000
11000
12000
13000
14000
15000
16000
17000
18000
0.01
0.1
1
Pulse Train Duration (s)
Versus Pulse Train Duration. Control
P
e
ak
H
a
l
f

S
i
n
e
W
a
v
e
O
n
-
s
tat
e
C
u
r
r
e
n
t
(
A
)
Initial T = 125C
No Voltage Reapplied
Rated V Reapplied
RRM
J
ST730C..L Series
Maximum Non Repetitive Surge Current
Of Conduction May Not Be Maintained.
ST730C..L Series
7
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Bulletin I25191 rev. D 04/03
Fig. 9 - On-state Voltage Drop Characteristics
100
1000
10000
0.5
1
1.5
2
2.5
3
3.5
T = 25C
J
I
n
s
t
a
n
ta
n
e
o
u
s

O
n
-
s
ta
te C
u
r
r
e
nt (
A
)
Instantaneous On-state Voltage (V)
T = 125C
J
ST730C..L Series
0.001
0.01
0.1
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
th
J
-
h
s
Steady State Value
R = 0.073 K/ W
(Single Side Cooled)
R = 0.031 K/ W
(Double Side Cooled)
(DC Operation)
thJ-hs
thJ-hs
ST730C..L Series
T
r
a
n
s
i
e
n
t
T
h
e
r
m
a
l

I
m
pe
d
a
nc
e
Z



(
K
/
W
)
0.1
1
10
100
0.001
0.01
0.1
1
10
100
VGD
IGD
(b)
(a)
Tj
=
2
5
C
Tj
=
1
2
5
C
T
j
=
-
40
C
(2) (3)
Instantaneous Gate Current (A)
I
n
s
t
a
n
t
a
ne
ou
s
G
a
t
e

V
o
l
t
a
g
e
(
V
)
a) Recommended load line for
b) Recommended load line for
<=30% rated di/ dt : 10V, 10ohms
Frequency Limited by PG(AV)
rated di/ dt : 20V, 10ohms; tr<=1 s
tr<=1 s
(1)
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
Rectangular gate pulse
Device: ST730C..L Series
(4)
Fig. 11 - Gate Characteristics
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
ST730C..L Series
8
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Bulletin I25191 rev. D 04/03
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 04 /03
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.