Product Summary

Part Number

DSS

DS(on)

IRHN7150

100V

0.055

34A

IRHN8150

100V

0.055

34A

Features:

Radiation Hardened up to 1 x 10

Rads (Si)

Single Event Burnout (SEB) Hardened

Single Event Gate Rupture (SEGR) Hardened

Gamma Dot (Flash X-Ray) Hardened

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Rating

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Light-weight

N-CHANNEL

MEGA RAD HARD

Provisional Data Sheet No. PD-9.720A

100 Volt, 0.055

, MEGA RAD HARD HEXFET

International Rectifier's MEGA RAD HARD technology
HEXFETs demonstrate excellent threshold voltage sta-
bility and breakdown voltage stability at total radiation
doses as high as 1 x 10

Rads (Si). Under identical pre-

and post-radiation test conditions, International Rectifier's
RAD HARD HEXFETs retain identical electrical specifi-
cations up to 1 x 10

Rads (Si) total dose. At 1 x 10

Rads

(Si) total dose, under the same pre-dose conditions, only
minor shifts in the electrical specifications are observed
and are so specified in table 1. No compensation in gate
drive circuitry is required. In addition, these devices are
capable of surviving transient ionization pulses as high
as 1 x 10

Rads (Si)/Sec, and return to normal operation

within a few microseconds. Single Event Effect (SEE)
testing of International Rectifier RAD HARD HEXFETs
has demonstrated virtual immunity to SEE failure. Since
the MEGA RAD HARD process utilizes International
Rectifier's patented HEXFET technology, the user can
expect the highest quality and reliability in the industry.

RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as volt-
age control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.

They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, au-
dio amplifiers and high-energy pulse circuits in space and
weapons environments.

IRHN7150
IRHN8150

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET

TRANSISTOR

Absolute Maximum Ratings

Parameter

IRHN7150, IRHN8150

Units

ID @ VGS = 12V, TC = 25°C

Continuous Drain Current

ID @ VGS = 12V, TC = 100°C Continuous Drain Current

IDM

Pulsed Drain Current

136

PD @ TC = 25°C

Max. Power Dissipation

150

Linear Derating Factor

1.2

W/K

VGS

Gate-to-Source Voltage

±20

EAS

Single Pulse Avalanche Energy

500

IAR

Avalanche Current

EAR

Repetitive Avalanche Energy

dv/dt

Peak Diode Recovery dv/dt

5.5

V/ns

Operating Junction

-55 to 150

TSTG

Storage Temperature Range

Package Mounting Surface Temperature

300 (for 5 sec.)

Weight

2.6 (typical)

Pre-Radiation

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Thermal Resistance

Parameter

Min. Typ. Max. Units

Test Conditions

RthJC

Junction-to-Case

0.83

K/W

RthJ-PCB

Junction-to-PC board

TBD

soldered to a copper-clad PC board

Source-Drain Diode Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

Continuous Source Current (Body Diode)

Modified MOSFET symbol showing the

ISM

Pulse Source Current (Body Diode)

136

integral reverse p-n junction rectifier.

VSD

Diode Forward Voltage

1.9

= 25°C, IS = 34A, VGS = 0V

t rr

Reverse Recovery Time

570

Tj = 25°C, IF = 34A, di/dt

100A/

QRR

Reverse Recovery Charge

5.8

VDD

50V

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

Electrical Characteristics

@ Tj = 25°C (Unless Otherwise Specified)

Parameter

Min.

Typ. Max. Units

Test Conditions

BVDSS

Drain-to-Source Breakdown Voltage

100

VGS = 0V, ID = 1.0 mA

BVDSS/

TJ Temperature Coefficient of Breakdown

0.13

V/°C

Reference to 25°C, ID = 1.0 mA

Voltage

RDS(on)

Static Drain-to-Source

0.055

VGS = 12V, ID = 21A

On-State Resistance

0.066

VGS = 12V, ID = 34A

VGS(th)

Gate Threshold Voltage

2.0

4.0

VDS = VGS, ID = 1.0 mA

gfs

Forward Transconductance

8.0

S (

)

VDS

15V, IDS = 21A

IDSS

Zero Gate Voltage Drain Current

VDS = 0.8 x Max Rating,VGS = 0V

250

VDS = 0.8 x Max Rating

VGS = 0V, TJ = 125°C

IGSS

Gate-to-Source Leakage Forward

100

VGS = 20V

IGSS

Gate-to-Source Leakage Reverse

-100

VGS = -20V

Total Gate Charge

160

VGS =12V, ID = 34A

Qgs

Gate-to-Source Charge

VDS = Max. Rating x 0.5

Qgd

Gate-to-Drain (`Miller') Charge

td(on)

Turn-On Delay Time

VDD = 50V, ID = 34A,

Rise Time

190

RG = 2.35

td(off)

Turn-Off Delay Time

170

Fall Time

130

Internal Drain Inductance

0.8

Internal Source Inductance

2.8

Ciss

Input Capacitance

4300

VGS = 0V, VDS = 25V

Coss

Output Capacitance

1200

f = 1.0 MHz

Crss

Reverse Transfer Capacitance

200

(see figure 22)

IRHN7150, IRHN8150 Devices

Pre-Radiation

Measured from the
drain lead, 6mm (0.25
in.) from package to
center of die.

Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.

Modified MOSFET
symbol showing the
internal inductances.

(see figure 28)

(see figures 23 and 31)

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Radiation Performance of Mega Rad Hard HEXFETs

IRHN7150, IRHN8150 Devices

Radiation Characteristics

International Rectifier Radiation Hardened HEX-FETs
are tested to verify their hardness capability.
The hardness assurance program at International
Rectifier uses two radiation environments.

Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of 12 volts per note 6 and
figure 8a and a V

DSS

bias condition equal to 80%

of the device rated voltage per note 7 and figure
8b. Pre- and post-radiation limits of the devices irra-
diated to 1 x 10

Rads (Si) are identical and are pre-

sented in Table 1, column 1, IRHN7150. Device
performance limits at a post radiation level of 1 x
10

Rads (Si) are presented in Table 1, column 2,

IRHN8150. The values in Table 1 will be met for ei-
ther of the two low dose rate test circuits that are
used. Typical delta curves showing radiation re-
sponse appear in figures 1 through 5. Typical post-
radiation curves appear in figures 10 through 17.

Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 10

Rads (Si), no change in limits are specified in DC
parameters. At a radiation level of 1 x10

Rads (Si),

leakage remains low and the device is usable with
no change in drive circuitry required.

High dose rate testing may be done on a special
request basis, using a dose rate up to 1 x 10

Rads

(Si)/Sec. Photocurrent and transient voltage wave-
forms are shown in figure 7, and the recommended
test circuit to be used is shown in figure 9.

International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. The ef-
fects on bulk silicon of the type used by Interna-
tional Rectifier on RAD HARD HEXFETs are shown
in figure 6. Single Event Effects characterization is
shown in Table 3.

Table 2. High Dose Rate

Rads (Si)/sec 10

Rads (Si)/sec

Parameter

Min. Typ Max. Min. Typ. Max.

Units

Test Conditions

VDSS

Drain-to-Source Voltage

Applied drain-to-source voltage
during gamma-dot

IPP

100

Peak radiation induced photo-current

di/dt

-- 1000

150 A/µsec Rate of rise of photo-current

0.1

0.5

µH

Circuit inductance required to limit di/dt

Table 3. Single Event Effects

LET (Si)

Fluence

Range

Bias

Parameter

Typ.

Units

Ion

(MeV/mg/cm

)

(ions/cm

)

(

(V)

BVDSS

100

1 x 10

~41

100

-5

Table 1. Low Dose Rate

IRHN7150

IRHN8150

Parameter

100K Rads (Si) 1000K Rads (Si)

Units

Test Conditions

min.

max.

min.

max.

DSS

Drain-to-Source Breakdown Voltage

100

= 0V, I

= 1.0 mA

GS(th)

Gate Threshold Voltage

2.0

4.0

1.25

4.5

= V

, I

= 1.0 mA

GSS

Gate-to-Source Leakage Forward

100

= +20V

GSS

Gate-to-Source Leakage Reverse

-100

= -20V

DSS

Zero Gate Voltage Drain Current

= 0.8 x Max Rating, V

= 0

DS(on)1

Static Drain-to-Source

0.055

0.075

= 12V, I

= 21A

On-State Resistance One

Diode Forward Voltage

1.9

TC = 25°C, IS = 34A,V

= 0V

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