IRFR_U1N60A.pmd
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
1.4
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
0.89
A
I
DM
Pulsed Drain Current
5.6
P
D
@T
C
= 25C
Power Dissipation
36
W
Linear Derating Factor
0.28
W/C
V
GS
Gate-to-Source Voltage
30
V
dv/dt
Peak Diode Recovery dv/dt
3.8
V/ns
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
SMPS
MOSFET
HEXFET
Power MOSFET
Absolute Maximum Ratings
l
Switch Mode Power Supply (SMPS)
l
Uninterruptable Power Supply
l
Power Factor Correction
Benefits
Applications
l
Low Gate Charge Qg results in Simple
Drive Requirement
l
Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche Voltage and Current
V
DSS
Rds(on) max
I
D
600V
7.0
1.4A
Notes
through
are on page 9
www.irf.com
1
3/7/03
Applicable Off Line SMPS Topologies:
l
Low Power Single Transistor Flyback
D-Pak
IRFR1N60A
I-Pak
IRFU1N60A
IRFR1N60A
IRFU1N60A
PD - 91846B
IRFR/U1N60A
2
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Parameter
Min. Typ. Max. Units
Conditions
g
fs
Forward Transconductance
0.88
S
V
DS
= 50V, I
D
= 0.84A
Q
g
Total Gate Charge
14
I
D
= 1.4A
Q
gs
Gate-to-Source Charge
2.7
nC
V
DS
= 400V
Q
gd
Gate-to-Drain ("Miller") Charge
8.1
V
GS
= 10V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time
9.8
V
DD
= 250V
t
r
Rise Time
14
I
D
= 1.4A
t
d(off)
Turn-Off Delay Time
18
R
G
= 2.15
t
f
Fall Time
20
R
D
= 178
,See Fig. 10
C
iss
Input Capacitance
229
V
GS
= 0V
C
oss
Output Capacitance
32.6
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
2.4
pF
= 1.0MHz, See Fig. 5
C
oss
Output Capacitance
320
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
C
oss
Output Capacitance
11.5
V
GS
= 0V, V
DS
= 480V, = 1.0MHz
C
oss
eff.
Effective Output Capacitance
130
V
GS
= 0V, V
DS
= 0V to 480V
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
600
V
V
GS
= 0V, I
D
= 250A
R
DS(on)
Static Drain-to-Source On-Resistance
7.0
V
GS
= 10V, I
D
= 0.84A
V
GS(th)
Gate Threshold Voltage
2.0
4.0
V
V
DS
= V
GS
, I
D
= 250A
25
A
V
DS
= 600V, V
GS
= 0V
250
V
DS
= 480V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
V
GS
= 30V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -30V
Static @ T
J
= 25C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
Dynamic @ T
J
= 25C (unless otherwise specified)
ns
Parameter
Typ.
Max.
Units
E
AS
Single Pulse Avalanche Energy
93
mJ
I
AR
Avalanche Current
1.4
A
E
AR
Repetitive Avalanche Energy
3.6
mJ
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.6
V
T
J
= 25C, I
S
= 1.4A, V
GS
= 0V
t
rr
Reverse Recovery Time
290
440
ns
T
J
= 25C, I
F
= 1.4A
Q
rr
Reverse RecoveryCharge
510
760
nC
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Diode Characteristics
1.4
5.6
A
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
3.5
R
JA
Junction-to-Ambient (PCB mount)
50
C/W
R
JA
Junction-to-Ambient
110
Thermal Resistance
IRFR/U1N60A
www.irf.com
3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.01
0.1
1
10
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , D
r
a
i
n
-
to
-S
o
u
r
ce
C
u
rre
n
t
(A
)
DS
D
4.5V
0.1
1
10
1
10
100
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.1
1
10
4.0
5.0
6.0
7.0
8.0
9.0
V = 100V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , D
r
a
i
n
-
to
-S
o
u
r
ce
C
u
rre
n
t
(A
)
GS
D
T = 25 C
J
T = 150 C
J
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS
(
on)
V
=
I =
GS
D
10V
1.4A
IRFR/U1N60A
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
2
4
6
8
10
12
14
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V ,
Gat
e
-
t
o-
Sour
ce Vol
t
age (
V
)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
1.4A
V
= 120V
DS
V
= 300V
DS
V
= 480V
DS
0.1
1
10
0.4
0.6
0.8
1.0
1.2
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 150 C
J
0.1
1
10
100
10
100
1000
10000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)
I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
1
10
100
1000
10000
1
10
100
1000
C,
C
a
pac
i
t
a
nc
e (
p
F
)
DS
V , Drain-to-Source Voltage (V)
A
V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C
GS
iss gs gd ds
rss gd
oss ds gd
C
iss
C
oss
C
rss
IRFR/U1N60A
www.irf.com
5
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width 1 s
Duty Factor 0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal R
e
s
pons
e
(
Z
)
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
0.0
0.4
0.8
1.2
1.6
T , Case Temperature ( C)
I , Drain Current (A)
C
D
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