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1
6/29/00
IRFR13N15D
IRFU13N15D
SMPS MOSFET
HEXFET
Power MOSFET
V
DSS
R
DS(on)
max
I
D
150V
0.18
14A
Parameter
Max.
Units
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
14
I
D
@ T
C
= 100C
Continuous Drain Current, V
GS
@ 10V
9.8
A
I
DM
Pulsed Drain Current
56
P
D
@T
C
= 25C
Power Dissipation
86
W
Linear Derating Factor
0.57
W/C
V
GS
Gate-to-Source Voltage
30
V
dv/dt
Peak Diode Recovery dv/dt
3.8
V/ns
T
J
Operating Junction and
-55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Absolute Maximum Ratings
Notes
through
are on page 10
D-Pak
IRFR13N15D
I-Pak
IRFU13N15D
PD - 93905A
l
High frequency DC-DC converters
Benefits
Applications
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
Typical SMPS Topologies
l
Telecom 48V input Active Clamp Forward Converter
2
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IRFR13N15D/IRFU13N15D
Parameter
Min. Typ. Max. Units
Conditions
g
fs
Forward Transconductance
5.0
S
V
DS
= 50V, I
D
= 8.3A
Q
g
Total Gate Charge
19 29 I
D
= 8.3A
Q
gs
Gate-to-Source Charge
5.5
8.2
nC
V
DS
= 120V
Q
gd
Gate-to-Drain ("Miller") Charge
9.4
14
V
GS
= 10V,
t
d(on)
Turn-On Delay Time
8.0
V
DD
= 75V
t
r
Rise Time
26
I
D
= 8.3A
t
d(off)
Turn-Off Delay Time
12
R
G
= 11
t
f
Fall Time
11
V
GS
= 10V
C
iss
Input Capacitance
620
V
GS
= 0V
C
oss
Output Capacitance
130
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
38
pF
= 1.0MHz
C
oss
Output Capacitance
780
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
C
oss
Output Capacitance
62
V
GS
= 0V, V
DS
= 120V, = 1.0MHz
C
oss
eff.
Effective Output Capacitance
110
V
GS
= 0V, V
DS
= 0V to 120V
Dynamic @ T
J
= 25C (unless otherwise specified)
ns
Parameter
Typ.
Max.
Units
E
AS
Single Pulse Avalanche Energy
130
mJ
I
AR
Avalanche Current
8.3
A
E
AR
Repetitive Avalanche Energy
8.6
mJ
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.3
V
T
J
= 25C, I
S
= 8.3A, V
GS
= 0V
t
rr
Reverse Recovery Time
110
ns
T
J
= 25C, I
F
= 8.3A
Q
rr
Reverse RecoveryCharge
520
nC
di/dt = 100A/s
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Diode Characteristics
14
56
A
Static @ T
J
= 25C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
150
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.17 V/C Reference to 25C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
0.18
V
GS
= 10V, I
D
= 8.3A
V
GS(th)
Gate Threshold Voltage
3.0
5.5
V
V
DS
= V
GS
, I
D
= 250A
25
A
V
DS
= 150V, V
GS
= 0V
250
V
DS
= 120V, V
GS
= 0V, T
J
= 150C
Gate-to-Source Forward Leakage
100
V
GS
= 30V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -30V
I
GSS
I
DSS
Drain-to-Source Leakage Current
Parameter
Typ.
Max.
Units
R
JC
Junction-to-Case
1.75
R
JA
Junction-to-Ambient (PCB mount)*
50
C/W
R
JA
Junction-to-Ambient
110
Thermal Resistance
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3
IRFR13N15D/IRFU13N15D
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
100
5
6
7
8
9
10
11
V = 50V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 175 C
J
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
10V
14A
0.01
0.1
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
0.1
1
10
100
0.1
1
10
100
20s PULSE WIDTH
T = 175 C
J
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.0V
4
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IRFR13N15D/IRFU13N15D
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
5
10
15
20
25
30
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
8.3A
V
= 30V
DS
V
= 75V
DS
V
= 120V
DS
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 175 C
J
0.1
1
10
100
1000
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 175 C
= 25 C
J
C
V , Drain-to-Source Voltage (V)
I , Drain Current (A)
I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
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5
IRFR13N15D/IRFU13N15D
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
V
GS
+
-
V
DD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
10
0.00001
0.0001
0.001
0.01
0.1
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJC
C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
175
0
2
4
6
8
10
12
14
T , Case Temperature
( C)
I , Drain Current (A)
C
D
6
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IRFR13N15D/IRFU13N15D
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
VDS
ID
IG
3mA
VGS
.3
F
50K
.2
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(B R )D SS
I
A S
R G
I
A S
0 .0 1
tp
D .U .T
L
V D S
+
-
VD D
D R IV E R
A
1 5 V
2 0 V
25
50
75
100
125
150
175
0
40
80
120
160
200
240
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
ID
TOP
BOTTOM
3.4A
5.9A
8.3A
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7
IRFR13N15D/IRFU13N15D
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFET
Power MOSFETs
*
V
GS
= 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
R
G
V
DD
dv/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
8
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IRFR13N15D/IRFU13N15D
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
6 .7 3 (.2 6 5 )
6 .3 5 (.2 5 0 )
- A -
4
1 2 3
6 .2 2 (.2 4 5 )
5 .9 7 (.2 3 5 )
- B -
3 X
0 .8 9 (.0 3 5 )
0 .6 4 (.0 2 5 )
0 .2 5 ( .0 1 0 ) M A M B
4 .5 7 ( .1 8 0 )
2 .2 8 ( .0 9 0 )
2 X
1 .1 4 (.0 4 5 )
0 .7 6 (.0 3 0 )
1 .5 2 ( .0 6 0 )
1 .1 5 ( .0 4 5 )
1.0 2 (.0 4 0 )
1.6 4 (.0 2 5 )
5 .4 6 (.2 1 5 )
5 .2 1 (.2 0 5 )
1 .2 7 (.0 5 0 )
0 .8 8 (.0 3 5 )
2 .3 8 (.0 9 4 )
2 .1 9 (.0 8 6 )
1 .1 4 (.0 4 5 )
0 .8 9 (.0 3 5 )
0 .5 8 (.0 2 3 )
0 .4 6 (.0 1 8 )
6 .4 5 (.2 4 5 )
5 .6 8 (.2 2 4 )
0 .5 1 (.0 2 0 )
M IN .
0 .5 8 ( .0 2 3 )
0 .4 6 ( .0 1 8 )
L E A D A S S IG N M E N T S
1 - G A T E
2 - D R A IN
3 - S O U R C E
4 - D R A IN
1 0 .4 2 (.4 1 0 )
9 .4 0 (.3 7 0 )
N O T E S :
1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 C O N F O R M S T O J E D E C O U T L IN E T O - 2 5 2 A A .
4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP ,
S O L D E R D IP M A X. + 0 .1 6 (.0 0 6 ) .
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9
IRFR13N15D/IRFU13N15D
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
6 .7 3 (.26 5 )
6 .3 5 (.25 0 )
- A -
6 .2 2 ( .2 4 5 )
5 .9 7 ( .2 3 5 )
- B -
3 X
0 .8 9 (.0 35 )
0 .6 4 (.0 25 )
0 .2 5 (.0 1 0 ) M A M B
2 .28 (.0 9 0 )
1 .1 4 (.0 45 )
0 .7 6 (.0 30 )
5 .4 6 (.2 1 5 )
5 .2 1 (.2 0 5 )
1 .2 7 ( .0 5 0 )
0 .8 8 ( .0 3 5 )
2 .3 8 (.0 9 4 )
2 .1 9 (.0 8 6 )
1 .1 4 ( .0 4 5 )
0 .8 9 ( .0 3 5 )
0 .5 8 (.0 2 3 )
0 .4 6 (.0 1 8 )
L E A D A S S IG N M E N T S
1 - G A T E
2 - D R A IN
3 - S O U R C E
4 - D R A IN
N O T E S :
1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5M , 19 8 2 .
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 C O N F O R M S T O J E D E C O U T L IN E T O -2 5 2 A A .
4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP ,
S O L D E R D IP M A X. + 0.1 6 (.0 0 6 ).
9 .6 5 ( .3 8 0 )
8 .8 9 ( .3 5 0 )
2 X
3 X
2.2 8 (.0 9 0)
1.9 1 (.0 7 5)
1 .5 2 (.0 6 0 )
1 .1 5 (.0 4 5 )
4
1 2 3
6 .4 5 (.2 4 5 )
5 .6 8 (.2 2 4 )
0 .5 8 (.0 2 3 )
0 .4 6 (.0 1 8 )
10
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IRFR13N15D/IRFU13N15D
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
T R
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .47 6 )
11.9 ( .46 9 )
F E E D D IR E C T IO N
FE E D D IR E C T IO N
16 .3 ( .641 )
15 .7 ( .619 )
T R R
T R L
N O T ES :
1 . C O N T R O LLIN G D IM E N S IO N : M ILL IM ET E R .
2 . A LL D IM EN S IO N S A R E SH O W N IN M ILLIM ET E R S ( IN C H E S ) .
3 . O U TL IN E C O N FO R M S T O E IA -481 & E IA -54 1.
N O TE S :
1. O U TL IN E C O N F O R M S T O E IA -481 .
16 m m
1 3 IN C H
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 6/00
Repetitive rating; pulse width limited by
max. junction temperature.
I
SD
8.3A, di/dt
280A/s, V
DD
V
(BR)DSS
,
T
J
175C
Notes:
Starting T
J
= 25C, L = 3.8mH
R
G
= 25
, I
AS
= 8.3A.
Pulse width
300s; duty cycle
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
* When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
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