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1
6/23/03
IRF7413Z
HEXFET
Power MOSFET
Notes
through
are on page 10
Benefits
l
Ultra-Low Gate Impedance
l
Very Low R
DS(on)
l
Fully Characterized Avalanche Voltage
and Current
Applications
l
Control FET for Notebook Processor
Power
l
Control and Synchronous Rectifier
MOSFET for Graphics Cards and POL
Converters in Computing, Networking
and Telecommunication Systems
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
SO-8
PD - 94646
Absolute Maximum Ratings
Parameter
Units
V
DS
Drain-to-Source Voltage
V
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
c
P
D
@T
A
= 25C
Power Dissipation
W
P
D
@T
A
= 70C
Power Dissipation
Linear Derating Factor
W/C
T
J
Operating Junction and
C
T
STG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
R
JL
Junction-to-Drain Lead
20
C/W
R
JA
Junction-to-Ambient
f
50
-55 to + 150
2.5
0.02
1.6
Max.
13
10
100
20
30
V
DSS
R
DS(on)
max
I
D
30V
10m
:
@V
GS
= 10V
13A
IRF7413Z
2
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Static @ T
J
= 25C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage
30
V
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.025
V/C
R
DS(on)
Static Drain-to-Source On-Resistance
8.0
10
m
10.5
13
V
GS(th)
Gate Threshold Voltage
1.35
1.80
2.25
V
V
GS(th)
/
T
J
Gate Threshold Voltage Coefficient
-5.0
mV/C
I
DSS
Drain-to-Source Leakage Current
1.0
A
150
I
GSS
Gate-to-Source Forward Leakage
100
nA
Gate-to-Source Reverse Leakage
-100
gfs
Forward Transconductance
62
S
Q
g
Total Gate Charge
9.5
14
Q
gs1
Pre-Vth Gate-to-Source Charge
3.0
Q
gs2
Post-Vth Gate-to-Source Charge
1.0
nC
Q
gd
Gate-to-Drain Charge
3.0
Q
godr
Gate Charge Overdrive
2.5
See Fig. 16
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
4.0
Q
oss
Output Charge
5.6
nC
t
d(on)
Turn-On Delay Time
8.7
t
r
Rise Time
6.3
t
d(off)
Turn-Off Delay Time
11
ns
t
f
Fall Time
3.8
C
iss
Input Capacitance
1210
C
oss
Output Capacitance
270
pF
C
rss
Reverse Transfer Capacitance
140
Avalanche Characteristics
Parameter
Units
E
AS
Single Pulse Avalanche Energy
d
mJ
I
AR
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
I
S
Continuous Source Current
3.1
(Body Diode)
A
I
SM
Pulsed Source Current
100
(Body Diode)
V
SD
Diode Forward Voltage
1.0
V
t
rr
Reverse Recovery Time
24
36
ns
Q
rr
Reverse Recovery Charge
16
24
nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
I
D
= 10A
V
GS
= 0V
V
DS
= 15V
V
GS
= 4.5V, I
D
= 10A
e
V
GS
= 4.5V
Typ.
V
DS
= V
GS
, I
D
= 250A
Clamped Inductive Load
V
DS
= 15V, I
D
= 10A
V
DS
= 24V, V
GS
= 0V, T
J
= 125C
T
J
= 25C, I
F
= 10A, V
DD
= 15V
di/dt = 100A/s
e
T
J
= 25C, I
S
= 10A, V
GS
= 0V
e
showing the
integral reverse
p-n junction diode.
MOSFET symbol
V
DS
= 15V, V
GS
= 0V
V
DD
= 16V, V
GS
= 4.5V
I
D
= 10A
V
DS
= 15V
V
GS
= 20V
V
GS
= -20V
V
DS
= 24V, V
GS
= 0V
Conditions
V
GS
= 0V, I
D
= 250A
Reference to 25C, I
D
= 1mA
V
GS
= 10V, I
D
= 13A
e
Conditions
Max.
32
10
= 1.0MHz
IRF7413Z
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3
Fig 4. Normalized On-Resistance
vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.1
1
10
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.5V
20s PULSE WIDTH
Tj = 150C
VGS
TOP
10V
8.0V
4.5V
4.0V
3.5V
3.0V
2.8V
BOTTOM
2.5V
0.1
1
10
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.5V
20s PULSE WIDTH
Tj = 25C
VGS
TOP
10V
8.0V
4.5V
4.0V
3.5V
3.0V
2.8V
BOTTOM
2.5V
2
3
4
5
6
VGS, Gate-to-Source Voltage (V)
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
)
TJ = 25C
TJ = 150C
VDS = 10V
20s PULSE WIDTH
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (C)
0.5
1.0
1.5
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
ID = 13A
VGS = 10V
IRF7413Z
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-to-Drain Voltage (V)
0.10
1.00
10.00
100.00
1000.00
I S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
TJ = 25C
TJ = 150C
VGS = 0V
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100sec
TA = 25C
Tj = 150C
Single Pulse
0
4
8
12
16
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
VDS= 24V
VDS= 15V
ID= 10A
IRF7413Z
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5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current vs.
Ambient Temperature
Fig 10. Threshold Voltage vs. Temperature
-75
-50
-25
0
25
50
75
100
125
150
TJ , Temperature ( C )
0.5
1.0
1.5
2.0
2.5
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
ID = 250A
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
100
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
A
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci
i
/
Ri
Ci=
i
/
Ri
C
4
4
R
4
R
4
Ri (C/W)
i (sec)
1.8556 0.000337
2.4927 0.012752
25.570 0.691000
20.340 21.90000
25
50
75
100
125
150
TA , Ambient Temperature (C)
0
2
4
6
8
10
12
14
I D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
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