irf7413.pmd
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1
10/30/02
IRF7413
SMPS MOSFET
HEXFET
Power MOSFET
l
High frequency DC-DC converters
Benefits
Applications
l
Low Gate to Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
Parameter
Max.
Units
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ 10V
12
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ 10V
9.6
A
I
DM
Pulsed Drain Current
96
P
D
@T
A
= 25C
Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/C
V
GS
Gate-to-Source Voltage
20
V
dv/dt
Peak Diode Recovery dv/dt
1.0
V/ns
T
J
Operating Junction and
-55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
C
Absolute Maximum Ratings
Notes
through
are on page 8
SO-8
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
V
DSS
R
DS(on)
max(m
W)
I
D
30V
11@V
GS
= 10V
12A
Symbol
Parameter
Typ.
Max.
Units
R
JL
Junction-to-Drain Lead
20
R
JA
Junction-to-Ambient
50
C/W
Thermal Resistance
PD- 91330G
IRF7413
2
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Parameter
Min. Typ. Max. Units
Conditions
g
fs
Forward Transconductance
16
S
V
DS
= 10V, I
D
= 7.2A
Q
g
Total Gate Charge
44
66 I
D
= 7.2A
Q
gs
Gate-to-Source Charge
7.9
nC
V
DS
= 24V
Q
gd
Gate-to-Drain ("Miller") Charge
9.2
V
GS
= 10V,
t
d(on)
Turn-On Delay Time
8.8
V
DD
= 15V
t
r
Rise Time
8.0
I
D
= 7.2A
t
d(off)
Turn-Off Delay Time
35
R
G
= 6.2
t
f
Fall Time
14
V
GS
= 10V
C
iss
Input Capacitance
1670
V
GS
= 0V
C
oss
Output Capacitance
670
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
100
pF
= 1.0MHz
C
oss
Output Capacitance
2290
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
C
oss
Output Capacitance
680
V
GS
= 0V, V
DS
= 24V, = 1.0MHz
C
oss
eff.
Effective Output Capacitance
1020
V
GS
= 0V, V
DS
= 0V to 24V
Dynamic @ T
J
= 25C (unless otherwise specified)
ns
Parameter
Typ.
Max.
Units
E
AS
Single Pulse Avalanche Energy
120
mJ
I
AR
Avalanche Current
7.2
A
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.0
V
T
J
= 25C, I
S
= 7.2A, V
GS
= 0V
t
rr
Reverse Recovery Time
50
75
ns
T
J
= 25C, I
F
= 7.2A
Q
rr
Reverse RecoveryCharge
74
110
nC
di/dt = 100A/s
Diode Characteristics
3.1
96
A
Static @ T
J
= 25C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
m
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
30
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.03
V/C
Reference to 25C, I
D
= 1mA
11
V
GS
= 10V, I
D
= 7.2A
18
V
GS
= 4.5V, I
D
= 6.0A
V
GS(th)
Gate Threshold Voltage
1.0
V
V
DS
= V
GS
, I
D
= 250A
1.0
A
V
DS
= 24V, V
GS
= 0V
25
V
DS
= 24V, V
GS
= 0V, T
J
= 125C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
nA
V
GS
= -20V
IRF7413
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3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
D
S
(
on)
V
=
I =
GS
D
10V
12A
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.5V
20s PULSE WIDTH
Tj = 25C
VGS
TOP 10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.5V
20s PULSE WIDTH
Tj = 150C
VGS
TOP 10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
2.0
3.0
4.0
5.0
6.0
VGS , Gate-to-Source Voltage (V)
0
1
10
100
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
TJ = 25C
TJ = 150C
VDS = 15V
20s PULSE WIDTH
IRF7413
4
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Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
C iss = C gs + C gd , C ds
SHORTED
Crss = Cgd
Coss = Cds + Cgd
0
10
20
30
40
50
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
VDS= 24V
VDS= 15V
VDS= 6.0V
ID= 7.2A
0.4
0.6
0.8
1.0
1.2
VSD, Source-toDrain Voltage (V)
0.1
1.0
10.0
100.0
I S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
TJ = 25C
TJ = 150C
VGS = 0V
0
1
10
100
1000
VDS , Drain-toSource Voltage (V)
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc = 25C
Tj = 150C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100sec
IRF7413
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5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Ther
m
a
l
R
e
sponse
(Z
)
1
th
J
A
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
V
DS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
-
V
DD
25
50
75
100
125
150
0
2
4
6
8
10
12
T , Case Temperature
( C)
I , Drain Current (A)
C
D
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
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