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Parameter
Maximum
Units
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ -10V
-3.4
A
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ -10V
-2.7
I
DM
Pulsed Drain Current
-27
P
D
@T
A
= 25C
Power Dissipation
2.0
W
P
D
@T
A
= 70C
Power Dissipation
1.3
Linear Derating Factor
16
mW/C
V
GS
Gate-to-Source Voltage
20
V
dv/dt
Peak Diode Recovery dv/dt
-5.0
V/ns
T
J,
T
STG
Junction and Storage Temperature Range
-55 to +150
C
l
Co-packaged HEXFET
Power
MOSFET and Schottky Diode
l
Ideal For Buck Regulator Applications
l
P-Channel HEXFET
l
Low V
F
Schottky Rectifier
l
SO-8 Footprint
IRF7342D2
03/09/01
FETKY
MOSFET & Schottky Diode
Absolute Maximum Ratings
(T
A
= 25C Unless Otherwise Noted)
TM
Description
V
DSS
= -55V
R
DS(on)
= 105m
Schottky Vf = 0.61V
The FETKY
TM
family of Co-packaged HEXFETs and
Schottky diodes offer the designer an innovative board
space saving solution for switching regulator and
power management applications. HEXFETs utilize
advanced processing techniques to achieve extremely
low on-resistance per silicon area. Combining this
technology with International Rectifier's low forward
drop Schottky rectifiers results in an extremely efficient
device suitable for use in a wide variety of portable
electronics applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The
SO-8 package is designed for vapor phase, infrared or
wave soldering techniques.
T op V ie w
8
1
2
3
4
5
6
7
A
A
S
G
D
D
K
K
Notes:
Repetitive rating pulse width limited by max. junction temperature (see fig. 11)
I
SD
-3.4A, di/dt
-150A/s, V
DD
V
(BR)DSS
, T
J
150C
Pulse width
400s duty cycle
2%
Surface mounted on 1 inch square copper board, t
10sec.
SO-8
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1
Symbol
Parameter
Typ.
Max.
Units
R
JL
Junction-to-Drain Lead, MOSFET
20
R
JA
Junction-to-Ambient
, MOSFET
62.5
C/W
Thermal Resistance
R
JA
Junction-to-Ambient
, SCHOTTKY
62.5
PD- 94101
IRF7342D2
2
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Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current(Body Diode)
-2.0
I
SM
Pulsed Source Current (Body Diode)
-27
V
SD
Body Diode Forward Voltage
-1.2
V
T
J
= 25C, I
S
= -2.0A, V
GS
= 0V
t
rr
Reverse Recovery Time (Body Diode)
54
80
ns
T
J
= 25C, I
F
= -2.0A
Q
r r
Reverse Recovery Charge
85
130
nC
di/dt = 100A/s
A
MOSFET Source-Drain Ratings and Characteristics
Parameter
Max. Units
Conditions
If (av)
Max. Average Forward Current
3.0
50% Duty Cycle. Rectangular Wave, T
A
= 57C
See Fig. 21
I
SM
Max. peak one cycle Non-repetitive
490
5s sine or 3s Rect. pulse
Following any rated
Surge current
70
10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
A
Schottky Diode Maximum Ratings
A
Schottky Diode Electrical Specifications
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-55
V
V
GS
= 0V, I
D
= -250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
-0.054
V/C
Reference to 25C, I
D
= -1mA
95
105
V
GS
= -10V, I
D
= -3.4A
150
170
V
GS
= -4.5V, I
D
= -2.7A
V
GS(th)
Gate Threshold Voltage
-1.0
V
V
DS
= V
GS
, I
D
= -250A
g
fs
Forward Transconductance
3.3
S
V
DS
= -10V, I
D
= -3.1A
-2.0
V
DS
= -44V, V
GS
= 0V
-25
V
DS
= -44V, V
GS
= 0V, T
J
= 70C
Gate-to-Source Forward Leakage
-100
V
GS
= -20V
Gate-to-Source Reverse Leakage
100
V
GS
= 20V
Q
g
Total Gate Charge
26
38
I
D
= -3.1A
Q
gs
Gate-to-Source Charge
3.0
4.5
nC
V
DS
= -44V
Q
gd
Gate-to-Drain ("Miller") Charge
8.4
13
V
GS
= -10V, See Fig. 6 & 14
t
d(on)
Turn-On Delay Time
14
22
V
DD
= -28V
t
r
Rise Time
10
15
I
D
= -1.0A
t
d(off)
Turn-Off Delay Time
43
64
R
G
= 6.0
t
f
Fall Time
22
32
V
GS
= -10V,
C
iss
Input Capacitance
690
V
GS
= 0V
C
oss
Output Capacitance
210
pF
V
DS
= -25V
C
rss
Reverse Transfer Capacitance
86
= 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
GSS
A
m
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
n A
ns
Parameter
Max. Units
Conditions
Vfm
Max. Forward Voltage Drop
0.61
If = 3.0A, Tj = 25C
0.76
If = 6.0A, Tj = 25C
0.53
If = 3.0A, Tj = 125C
0.65
If = 6.0A, Tj = 125C
Vrrm
Max. Working Peak Reverse Voltage
60
Irm
Max. Reverse Leakage Current
2.0
mA Vr = 60V
Tj = 25C
30
Tj = 125C
V
V
Ct
Max. Junction Capacitance
145
pF
Vr = 5Vdc ( 100kHz to 1 MHz) 25C
IRF7342D2
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3
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
-
Power Mosfet Characteristics
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
-10V
-3.4 A
0.1
1
10
100
-VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
-I
D
, Drain-to-Source Current (A)
-2.5V
20s PULSE WIDTH
Tj = 25C
VGS
TOP -15V
-10V
-6.0V
-5.0V
-4.5V
-3.5V
-3.0V
BOTTOM -2.5V
0.1
1
10
100
-VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
-I
D
, Drain-to-Source Current (A)
-2.5V
20s PULSE WIDTH
Tj = 150C
VGS
TOP -15V
-10V
- 6.0V
-5.5V
-4.5V
-3.5V
-3.0V
BOTTOM - 2.5V
0.1
1
10
100
2.0
3.0
4.0
5.0
6.0
7.0
V = -25V
20s PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 150 C
J
IRF7342D2
4
www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
-
Fig 7. Typical Source-Drain Diode
Forward Voltage
Power Mosfet Characteristics
1
10
100
0
200
400
600
800
1000
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
0
10
20
30
40
0
4
8
12
16
20
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D
-3.1A
V
= -12V
DS
V
= -30V
DS
V
= -48V
DS
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 150 C
J
0.1
1
10
100
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)
I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
IRF7342D2
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5
Power Mosfet Characteristics
Fig 9. Maximum Drain Current Vs.
Case Temperature
V
DS
V
GS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
T , Case Temperature
( C)
-I , Drain Current (A)
C
D
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