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Max.
N-Channel
P-Channel
V
DS
Drain-to-Source Voltage
12
-12
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ 4.5V
6.3
-3.0
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ 4.5V
5.2
-2.5
I
DM
Pulsed Drain Current
26
-13
P
D
@T
A
= 25C
Power Dissipation
2.0
W
P
D
@T
A
= 70C
Power Dissipation
1.3
Linear Derating Factor
16
mW/C
V
GS
Gate-to-Source Voltage
12
8.0
V
T
J,
T
STG
Junction and Storage Temperature Range
C
N-Ch P-Ch
V
DSS
12V -12V
R
DS(on)
0.034
0.150
HEXFET
Power MOSFET
6/2/03
IRF7338
Description
www.irf.com
1
These N and P channel MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
the extremely low on-resistance per silicon area. This
benefit provides the designer with an extremely efficient
device for use in battery and load management
applications.
This Dual SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With these improvements, multiple devices
can be used in an application with dramatically reduced
board space. The package is designed for vapor phase,
infrared, or wave soldering technique
s.
Parameter
Units
A
Absolute Maximum Ratings
-55 to + 150
l
Ultra Low On-Resistance
l
Dual N and P Channel MOSFET
l
Surface Mount
l
Available in Tape & Reel
SO-8
D1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
Symbol
Parameter
Typ.
Max.
Units
R
JL
Junction-to-Drain Lead
20
R
JA
Junction-to-Ambient
62.5
C/W
Thermal Resistance
PD - 94372C
IRF7338
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
N-Ch
12
--
--
V
GS
= 0V, I
D
= 250A
P-Ch -12
--
--
V
GS
= 0V, I
D
= -250A
N-Ch
--
0.01
--
Reference to 25C, I
D
= 1mA
P-Ch
--
-0.01
--
Reference to 25C, I
D
= -1mA
--
-- 0.034
V
GS
= 4.5V, I
D
= 6.0A
--
-- 0.060
V
GS
= 3.0V, I
D
= 2.0A
--
-- 0.150
V
GS
= -4.5V, I
D
= -2.9A
--
-- 0.200
V
GS
= -2.7V, I
D
= -1.5A
N-Ch 0.6
--
1.5
V
DS
= V
GS
, I
D
= 250A
P-Ch -0.40
--
-1.0
V
DS
= V
GS
, I
D
= -250A
N-Ch 9.2
--
--
V
DS
= 6.0V, I
D
= 6.0A
P-Ch 3.5
--
--
V
DS
= -6.0V, I
D
= -1.5A
N-Ch
--
--
20
V
DS
= 9.6V, V
GS
= 0V
P-Ch
--
--
-1.0
V
DS
= -9.6 V, V
GS
= 0V
N-Ch
--
--
50
V
DS
= 9.6V, V
GS
= 0V, T
J
= 55C
P-Ch
--
--
-25
V
DS
= -9.6V, V
GS
= 0V, T
J
= 55C
I
GSS
Gate-to-Source Forward Leakage
N-Ch
--
100 nA
V
GS
= 12V
P-Ch
--
--
100
V
GS
= 8.0V
N-Ch
--
--
8.6
P-Ch
--
--
6.6
N-Ch
--
--
1.9
P-Ch
--
--
1.3
N-Ch
--
--
3.9
P-Ch
--
--
1.6
N-Ch
--
6.0
--
P-Ch
--
9.6
--
N-Ch
--
7.6
--
P-Ch
--
13
--
N-Ch
--
26
--
P-Ch
--
27
--
N-Ch
--
34
--
P-Ch
--
25
--
N-Ch
--
640
--
P-Ch
--
490
--
N-Ch
--
340
--
P-Ch
--
80
--
N-Ch
--
110
--
P-Ch
--
58
--
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
V
V/C
V
S
A
nC
ns
pF
N-Channel
I
D
= 6.0A, V
DS
= 6.0V, V
GS
= 4.5V
P-Channel
I
D
= -2.9A, V
DS
= -9.6V, V
GS
= -4.5 V
N-Channel
V
DD
= 6.0V, I
D
= 1.0A, R
G
= 6.0
,
V
GS
= 4.5V
P-Channel
V
DD
= -6.0V, I
D
= -2.9A, R
G
= 6.0
,
V
GS
= -4.5V
N-Channel
V
GS
= 0V, V
DS
= 9.0V, = 1.0MHz
P-Channel
V
GS
= 0V, V
DS
= -9.0V, = 1.0KHz
N-Ch
P-Ch
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width
400s; duty cycle
2%.
Notes:
Parameter
Min. Typ. Max. Units
Conditions
N-Ch
--
--
6.3
P-Ch
--
--
-3.0
N-Ch
--
--
26
P-Ch
--
--
-13
N-Ch
--
--
1.3
T
J
= 25C, I
S
= 1.7A, V
GS
= 0V
P-Ch
--
--
-1.2
T
J
= 25C, I
S
= -2.9A, V
GS
= 0V
N-Ch
--
51
76
P-Ch
--
37
56
N-Ch
--
43
64
P-Ch
--
20
30
Source-Drain Ratings and Characteristics
I
S
Continuous Source Current (Body Diode)
I
SM
Pulsed Source Current (Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
A
V
ns
nC
N-Channel
T
J
= 25C, I
F
= 1.7A, di/dt = 100A/s
P-Channel
T
J
= 25C, I
F
= -2.9A, di/dt = -100A/s
Surface mounted on 1 in square Cu board.
The N-channel MOSFET can withstand 15V V
GS
max
for up to 24 hours over the life of the device.
IRF7338
www.irf.com
3
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Typical Source-Drain Diode
Forward Voltage
N-Channel
0.1
1
10
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
1.5V
20s PULSE WIDTH
Tj = 25C
VGS
TOP 7.5V
4.5V
4.0V
3.5V
3.0V
2.7V
2.0V
BOTTOM 1.5V
0.1
1
10
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
1.5V
20s PULSE WIDTH
Tj = 150C
VGS
TOP 7.5V
4.5V
4.0V
3.5V
3.0V
2.7V
2.0V
BOTTOM 1.5V
1.0
2.0
3.0
4.0
VGS, Gate-to-Source Voltage (V)
1
10
100
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
TJ = 25C
TJ = 150C
VDS = 10V
20s PULSE WIDTH
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-toDrain Voltage (V)
0.1
1.0
10.0
100.0
I S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
TJ = 25C
TJ = 150C
VGS = 0V
IRF7338
4
www.irf.com
Fig 5. Normalized On-Resistance
Vs. Temperature
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
N-Channel
0
5
10
15
20
25
30
ID , Drain Current (A)
0.00
0.02
0.04
0.06
0.08
0.10
0.12
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
)
VGS = 3.0V
VGS = 4.5V
3.0
4.0
5.0
6.0
7.0
8.0
VGS, Gate -to -Source Voltage (V)
0.02
0.03
0.04
0.05
R
D
S
(
o
n
),
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
)
ID = 6.3A
Fig 8.
Typical Power Vs. Time
0.00
0.00
0.00
0.01
0.10
1.00
10.00
Time (sec)
0
20
40
60
80
P
o
w
e
r
(
W
)
-60
-40
-20
0
20
40
60
80
100
120
140
160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature
( C)
R
, D
r
a
i
n
-
to
-S
o
u
r
c
e
On
R
e
s
i
s
t
a
n
c
e
(
N
or
m
a
l
i
z
ed)
J
D
S
(
on)
V
=
I
=
GS
D
4.5V
6.3A
IRF7338
www.irf.com
5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
N-Channel
1
10
100
VDS, Drain-to-Source Voltage (V)
0
200
400
600
800
1000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
C iss = C gs + C gd , C ds
SHORTED
Crss = Cgd
Coss = Cds + Cgd
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal
R
e
s
pons
e
(
Z
)
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
VDS= 12V
ID= 6.0A
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