irf7325.p65
Parameter
Max.
Units
V
DS
Drain- Source Voltage
-12
V
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ -4.5V
-7.8
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ -4.5V
-6.2
A
I
DM
Pulsed Drain Current
-39
P
D
@T
A
= 25C
Power Dissipation
2.0
P
D
@T
A
= 70C
Power Dissipation
1.3
Linear Derating Factor
16
mW/C
V
GS
Gate-to-Source Voltage
8.0
V
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
C
2/5/01
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1
IRF7325
HEXFET
Power MOSFET
PD- 94094
Absolute Maximum Ratings
W
Symbol
Parameter
Typ.
Max.
Units
R
JL
Junction-to-Drain Lead
20
R
JA
Junction-to-Ambient
62.5
C/W
Thermal Resistance
V
DSS
R
DS(on)
max (m
)
)
)
)
)
I
D
-12V
24@V
GS
= -4.5V
7.8A
33@V
GS
= -2.5V
6.2A
49@V
GS
= -1.8V
3.9A
SO-8
D 1
D 1
D 2
D 2
G 1
S2
G 2
S 1
T o p V ie w
8
1
2
3
4
5
6
7
Description
q
Trench Technology
q
Ultra Low On-Resistance
q
Dual P-Channel MOSFET
q
Low Profile (<1.8mm)
q
Available in Tape & Reel
New P-Channel HEXFET
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
IRF7325
2
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Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
-1.2
V
T
J
= 25C, I
S
= -2.0A, V
GS
= 0V
t
rr
Reverse Recovery Time
36
54
ns
T
J
= 25C, I
F
= -2.0A
Q
rr
Reverse Recovery Charge
28
42
nC
di/dt = -100A/s
Source-Drain Ratings and Characteristics
-39
-2.0
A
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width
400s; duty cycle
2%.
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-12
V
V
GS
= 0V, I
D
= -250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.007
V/C
Reference to 25C, I
D
= -1mA
24
V
GS
= -4.5V, I
D
= -7.8A
33
V
GS
= -2.5V, I
D
= -6.2A
49
V
GS
= -1.8V, I
D
= -3.9A
V
GS(th)
Gate Threshold Voltage
-0.40 -0.90
V
V
DS
= V
GS
, I
D
= -250A
g
fs
Forward Transconductance
17
S
V
DS
= -10V, I
D
= -7.8A
-1.0
V
DS
= -9.6V, V
GS
= 0V
-25
V
DS
= -9.6V, V
GS
= 0V, T
J
= 70C
Gate-to-Source Forward Leakage
-100
V
GS
= -8.0V
Gate-to-Source Reverse Leakage
100
V
GS
= 8.0V
Q
g
Total Gate Charge
22
33
I
D
= -7.8A
Q
gs
Gate-to-Source Charge
5.0
7.5
nC
V
DS
= -6.0V
Q
gd
Gate-to-Drain ("Miller") Charge
4.7
7.0
V
GS
= -4.5V
t
d(on)
Turn-On Delay Time
9.4
V
DD
= -6.0V
t
r
Rise Time
9.8
I
D
= -1.0A
t
d(off)
Turn-Off Delay Time
240
R
D
= 6.0
t
f
Fall Time
180
V
GS
= -4.5V
C
iss
Input Capacitance
2020
V
GS
= 0V
C
oss
Output Capacitance
520
pF
V
DS
= -10V
C
rss
Reverse Transfer Capacitance
330
= 1.0MHz
I
GSS
A
m
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
When mounted on 1 inch square copper board.
IRF7325
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3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
-4.5V
-7.8A
0.1
1
10
100
0.1
1
10
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
-10V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
-1.2V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.2V
0.1
1
10
100
0.1
1
10
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
-10V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
-1.2V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-1.2V
0.1
1
10
100
1.0
1.5
2.0
2.5
3.0
V = -10V
20s PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 150 C
J
IRF7325
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0
10
20
30
40
50
0
2
4
6
8
10
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D
-7.8A
V
= -6V
DS
V
= -9.6V
DS
0.1
1
10
100
0.2
0.6
1.0
1.4
1.8
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 150 C
J
1
10
100
0.1
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
A
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)
I , Drain Current (A)
DS
D
100us
1ms
10ms
1
10
100
-VDS, Drain-to-Source Voltage (V)
0
500
1000
1500
2000
2500
3000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
IRF7325
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5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
0.0
2.0
4.0
6.0
8.0
T , Case Temperature ( C)
-I , Drain Current (A)
C
D
V
DS
V
GS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
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