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1
Parameter
Maximum
Units
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@4.5V
-2.9
A
I
D
@ T
A
= 70C
-2.3
I
DM
Pulsed Drain Current
-23
P
D
@T
A
= 25C
Power Dissipation
2.0
W
P
D
@T
A
= 70C
1.3
Linear Derating Factor
16
mW/C
V
GS
Gate-to-Source Voltage
12
V
dv/dt
Peak Diode Recovery dv/dt
-5.0
V/ns
T
J,
T
STG
Junction and Storage Temperature Range
-55 to +150
C
IRF7324D1
PRELIMINARY
PD- 91789
FETKY
TM
TM
TM
TM
TM
MOSFET / Schottky Diode
Notes:
Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)
I
SD
-2.2A, di/dt
-50A/s, V
DD
V
(BR)DSS
, T
J
150C
Pulse width
300s; duty cycle
2%
Surface mounted on FR-4 board, t
10sec.
Parameter
Maximum
Units
R
JA
Junction-to-Ambient
62.5
C/W
Absolute Maximum Ratings
(T
A
= 25C unless otherwise noted)
Thermal Resistance Ratings
The FETKY
family of co-packaged HEXFETs and Schottky diodes offer
the designer an innovative board space saving solution for switching
regulator applications. Generation 5 HEXFETs utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. Combining
this technology with International Rectifier's low forward drop Schottky
rectifiers results in an extremely efficient device suitable for use in a wide
variety of portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
Description
V
DSS
= -20V
R
DS(on)
= 0.18
Schottky Vf = 0.39V
S O -8
TM
T op V ie w
8
1
2
3
4
5
6
7
A
A
S
G
D
D
K
K
l
Co-packaged HEXFET
Power
MOSFET and Schottky Diode
l
Ideal for Mobile Phone Applications
l
Generation V Technology
l
SO-8 Footprint
IRF7324D1
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-20
--
--
V
V
GS
= 0V, I
D
= -250A
R
DS(on)
Static Drain-to-Source On-Resistance
--
0.070 0.180
V
GS
= -4.5V, I
D
= -2.9A
--
0.115 0.375
V
GS
= -2.7V, I
D
= -2.5A
V
GS(th)
Gate Threshold Voltage
-0.70
--
--
V
V
DS
= V
GS
, I
D
= -250A
g
fs
Forward Transconductance
4.0
--
--
S
V
DS
= -16V, I
D
= -2.2A
I
DSS
Drain-to-Source Leakage Current
--
--
-1.0
V
DS
= -16V, V
GS
= 0V
--
--
-25
V
DS
= -16V, V
GS
= 0V, T
J
= 125C
I
GSS
Gate-to-Source Forward Leakage
--
--
-100
V
GS
= -12V
Gate-to-Source Reverse Leakage
--
--
100
V
GS
= 12V
Q
g
Total Gate Charge
--
15
22
I
D
= -2.2A
Q
gs
Gate-to-Source Charge
--
2.2
3.3
nC
V
DS
= -16V
Q
gd
Gate-to-Drain ("Miller") Charge
--
6.0
9.0
V
GS
= -4.5V (see figure 10)
t
d(on)
Turn-On Delay Time
--
8.4
--
V
DD
= -10V
t
r
Rise Time
--
26
--
I
D
= -2.2A
t
d(off)
Turn-Off Delay Time
--
51
--
R
G
= 6.0
t
f
Fall Time
--
33
--
R
D
= 4.5
C
iss
Input Capacitance
--
610
--
V
GS
= 0V
C
oss
Output Capacitance
--
310
--
pF
V
DS
= -15V
C
rss
Reverse Transfer Capacitance
--
170
--
= 1.0MHz (see figure 9)
MOSFET Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
A
nA
ns
Parameter
Min. Typ. Max.
Units
Conditions
I
S
Continuous Source Current (Body Diode)
--
--
-2.0
A
I
SM
Pulsed Source Current (Body Diode)
--
--
-23
V
SD
Body Diode Forward Voltage
--
--
-1.2
V
T
J
= 25C, I
S
= -2.0A, V
GS
= 0V
t
rr
Reverse Recovery Time (Body Diode)
--
43
65
ns
T
J
= 25C, I
F
= -2.3A
Q
rr
Reverse Recovery Charge
--
44
66
nC
di/dt = 100A/s
MOSFET Source-Drain Ratings and Characteristics
Parameter
Max. Units.
Conditions
I
F(av)
Max. Average Forward Current
1.7
50% Duty Cycle. Rectangular Wave, T
A
= 25C
1.2
T
A
= 70C
I
SM
Max. peak one cycle Non-repetitive
120
5s sine or 3s Rect. pulse
Following any rated
Surge current
11
10ms sine or 6ms Rect. pulse load condition &
with V
RRM
applied
A
A
Schottky Diode Maximum Ratings
Parameter
Max. Units
Conditions
V
FM
Max. Forward voltage drop
0.50
I
F
= 1.0A, T
J
= 25C
0.62
I
F
= 2.0A, T
J
= 25C
0.39
I
F
= 1.0A, T
J
= 125C
0.57
I
F
= 2.0A, T
J
= 125C .
I
RM
Max. Reverse Leakage current
0.05
V
R
= 20V
T
J
= 25C
10
T
J
= 125C
C
t
Max. Junction Capacitance
92
pF
V
R
= 5Vdc ( 100kHz to 1 MHz) 25C
dv/dt
Max. Voltage Rate of Charge
3600 V/ s Rated V
R
Schottky Diode Electrical Specifications
V
mA
IRF7324D1
www.irf.com
3
Power Mosfet Characteristics
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Typical Source-Drain Diode
Forward Voltage
0.1
1
1 0
1 0 0
0.01
0.1
1
1 0
1 0 0
D
D S
2 0 s P U L S E W ID TH
T = 2 5 C
A
-
I
,
D
r
ai
n-
t
o
-
S
our
c
e
C
u
r
r
ent
(
A
)
-V , D ra in-to-S o urc e V o lta ge (V )
J
VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
-1 .5 V
0.1
1
1 0
1 0 0
0.01
0.1
1
1 0
1 0 0
D
D S
20 s P U L S E W ID T H
T = 1 5 0 C
A
-
I
,
D
r
ai
n-
t
o
-
S
ou
r
c
e
C
u
r
r
ent
(
A
)
-V , D ra in-to-S o urc e V o ltage (V )
J
VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
-1 .5 V
0.1
1
1 0
1 0 0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
T = 2 5 C
T = 1 5 0 C
J
J
G S
D
A
-
I
,
D
r
a
i
n
-
t
o
-S
o
u
rc
e
C
u
rre
n
t
(A
)
-V , G a te -to -S o u rc e V o lta g e (V )
V = -1 5 V
2 0 s P U L S E W ID T H
D S
0.1
1
1 0
1 0 0
0.3
0.6
0.9
1.2
1.5
T = 2 5 C
T = 1 5 0 C
J
J
V = 0 V
G S
S D
SD
A
-
I
, R
e
v
e
rs
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
-V , S o urc e-to -D rain V o lta ge (V )
IRF7324D1
4
www.irf.com
R
DS
(on) , Drain-to-Source On Resistance (
)
R
DS
(on) , Drain-to-Source On Resistance (
)
Power Mosfet Characteristics
Fig 8. Maximum Safe Operating Area
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
Fig 5. Normalized On-Resistance
Vs. Temperature
0.1
1
1 0
1 0 0
1
1 0
1 0 0
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R
D S (on)
A
-
I
,
D
r
ai
n C
u
r
r
ent
(
A
)
-V , D rain-to -S ourc e V oltage (V )
D S
D
1 00 s
1m s
1 0m s
T = 2 5 C
T = 1 0 0 C
S in g le P u ls e
A
J
0.0
0.5
1.0
1.5
2.0
-60
-40
-20
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
1 6 0
J
T , J u nc tion T em pe rature (C )
R
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
DS
(
o
n
)
(
N
or
m
a
l
i
z
ed)
A
I = -3 .6 A
D
V = -4 .5 V
G S
0.04
0.06
0.08
0.10
0.12
0.14
2
4
6
8
A
I = -2 .9 A
D
G S
-V , G a te -to-S o u rc e V o lta ge (V )
0.05
0.06
0.07
0.08
0.09
0.10
0
1
2
3
A
V G S = -5 .0 V
D
-I , D ra in C u rren t (A )
IRF7324D1
www.irf.com
5
Power Mosfet Characteristics
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
0
500
1000
1500
1
10
10 0
C
,
C
apaci
t
a
n
c
e
(
p
F
)
A
D S
-V , D rain-to -S ourc e V oltage (V )
V = 0 V , f = 1 M H z
C = C + C , C S H O R TE D
C = C
C = C + C
G S
is s g s g d d s
rs s g d
o ss d s gd
C
is s
C
o s s
C
rs s
0
2
4
6
8
10
0
5
1 0
1 5
2 0
2 5
G
GS
A
F O R T E S T C IR C U IT
S E E F IG U R E 1 2
-
V
, G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(V
)
Q , Tota l G ate C h arg e (n C )
I = -2 .2 A
V = -1 6 V
D
D S
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