HEXFET
Power MOSFET
6/26/00
IRF7324
Absolute Maximum Ratings
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1
Thermal Resistance
Parameter Max.
Units
R
JA
Maximum Junction-to-Ambient
62.5 C/W
Parameter
Max.
Units
V
DS
Drain-Source Voltage
-20
V
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ -4.5V
-9.0
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ -4.5V
-7.1
A
I
DM
Pulsed Drain Current
-71
P
D
@T
A
= 25C
Maximum Power Dissipation
2.0
W
P
D
@T
A
= 70C
Maximum Power Dissipation
1.3
W
Linear Derating Factor 16 mW/C
V
GS
Gate-to-Source Voltage
12 V
T
J
, T
STG
Junction and Storage Temperature Range
-55 to + 150
C
V
DSS
= -20V
R
DS(on)
= 0.018
New trench HEXFET
Power MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in battery and load management
applications.
q
Trench Technology
q
Ultra Low On-Resistance
q
Dual P-Channel MOSFET
q
Low Profile (<1.1mm)
q
Available in Tape & Reel
q
2.5V Rated
Description
PD -93799A
D 1
D 1
D 2
D 2
G 1
S2
G 2
S 1
T o p V ie w
8
1
2
3
4
5
6
7
SO-8
IRF7324
2
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Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
-1.2
V
T
J
= 25C, I
S
= -2.0A, V
GS
= 0V
t
rr
Reverse Recovery Time
180
270
ns
T
J
= 25C, I
F
= -2.0A
Q
rr
Reverse Recovery Charge
300
450
nC
di/dt = -100A/s
Source-Drain Ratings and Characteristics
-71
-2.0
A
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-20
V
V
GS
= 0V, I
D
= -250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
-0.02
V/C
Reference to 25C, I
D
= -1mA
0.018
V
GS
= -4.5V, I
D
= -9.0A
0.026
V
GS
= -2.5V, I
D
= -7.7A
V
GS(th)
Gate Threshold Voltage
-0.45
-1.0
V
V
DS
= V
GS
, I
D
= -250A
g
fs
Forward Transconductance
19
S
V
DS
= -10V, I
D
= -9.0A
-1.0
V
DS
= -16V, V
GS
= 0V
-25
V
DS
= -16V, V
GS
= 0V, T
J
= 125C
Gate-to-Source Forward Leakage
-100
V
GS
= -12V
Gate-to-Source Reverse Leakage
100
V
GS
= 12V
Q
g
Total Gate Charge
42
63
I
D
= -9.0A
Q
gs
Gate-to-Source Charge
7.1
11
nC
V
DS
= -16V
Q
gd
Gate-to-Drain ("Miller") Charge
12
18
V
GS
= -5.0V
t
d(on)
Turn-On Delay Time
17
V
DD
= -10V
t
r
Rise Time
36
I
D
= -1.0A
t
d(off)
Turn-Off Delay Time
170
R
G
= 6.0
t
f
Fall Time
190
R
D
= 10
C
iss
Input Capacitance
2940
V
GS
= 0V
C
oss
Output Capacitance
630
pF
V
DS
= -15V
C
rss
Reverse Transfer Capacitance
420
= 1.0MHz
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
GSS
A
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width
300s; duty cycle
2%.
Surface mounted on FR-4 board, t
10sec.
S
D
G
IRF7324
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3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
-4.5V
-9.0A
0.01
0.1
1
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
-4.5V
-3.5V
-2.5V
-2.0V
-1.5V
-1.3V
-1.0V
-0.75V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-0.75V
0.01
0.1
1
10
100
1000
0.1
1
10
100
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
-4.5V
-3.5V
-2.5V
-2.0V
-1.5V
-1.3V
-1.0V
-0.75V
-V , Drain-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
DS
D
-0.75V
0.1
1
10
100
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V = -15V
20s PULSE WIDTH
DS
-V , Gate-to-Source Voltage (V)
-I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 150 C
J
IRF7324
4
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Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
1
10
100
0
1000
2000
3000
4000
5000
-V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss
gs
gd ,
ds
rss
gd
oss
ds
gd
Ciss
Coss
Crss
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-V ,Source-to-Drain Voltage (V)
-I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 150 C
J
1
10
100
1000
0.1
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
C
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)
I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
0
10
20
30
40
50
60
0
2
4
6
8
10
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D
-9.0A
V
= -16V
DS
IRF7324
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5
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
0.0
2.0
4.0
6.0
8.0
10.0
T , Case Temperature ( C)
-I , Drain Current (A)
C
D
V
DS
V
GS
Pulse Width
1
s
Duty Factor
0.1 %
R
D
V
GS
V
DD
R
G
D.U.T.
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
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