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HEXFET
Power MOSFET
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
5/29/01
S O -8
V
DSS
= 20V
R
DS(on)
= 0.029
IRF7311
Description
Symbol
Maximum
Units
Drain-Source Voltage
V
DS
20
Gate-Source Voltage
V
GS
12
T
A
= 25C
6.6
T
A
= 70C
5.3
Pulsed Drain Current
I
DM
26
Continuous Source Current (Diode Conduction)
I
S
2.5
T
A
= 25C
2.0
T
A
= 70C
1.3
Single Pulse Avalanche Energy
E
AS
100
mJ
Avalanche Current
I
AR
4.1
A
Repetitive Avalanche Energy
E
AR
0.20
mJ
Peak Diode Recovery dv/dt
dv/dt
5.0
V/ ns
Junction and Storage Temperature Range
T
J,
T
STG
-55 to + 150
C
Thermal Resistance Ratings
Parameter
Symbol
Limit
Units
Maximum Junction-to-Ambient
R
JA
62.5
C/W
Absolute Maximum Ratings
( T
A
= 25C Unless Otherwise Noted)
Continuous Drain Current
Maximum Power Dissipation
A
I
D
P
D
V
W
D 1
D 1
D 2
D 2
G 1
S2
G 2
S 1
T o p V ie w
8
1
2
3
4
5
6
7
l
Generation V Technology
l
Ultra Low On-Resistance
l
Dual N-Channel MOSFET
l
Surface Mount
l
Fully Avalanche Rated
PD - 91435C
IRF7311
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
0.72
1.0
V
T
J
= 25C, I
S
= 1.7A, V
GS
= 0V
t
rr
Reverse Recovery Time
52
77
ns
T
J
= 25C, I
F
= 1.7A
Q
rr
Reverse RecoveryCharge
58
86
nC
di/dt = 100A/s
Source-Drain Ratings and Characteristics
26
2.5
A
S
D
G
Surface mounted on 1 in square Cu board
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
4.1A, di/dt
92A/s, V
DD
V
(BR)DSS
,
T
J
150C
Notes:
Starting T
J
= 25C, L = 12mH
R
G
= 25
, I
AS
= 4.1A.
Pulse width
300s; duty cycle
2%.
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
20
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.027
V/C
Reference to 25C, I
D
= 1mA
0.023 0.029
V
GS
= 4.5V, I
D
= 6.0A
0.030 0.046
V
GS
= 2.7V, I
D
= 5.2A
V
GS(th)
Gate Threshold Voltage
0.7
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
20
S
V
DS
= 10V, I
D
= 6.0A
1.0
V
DS
= 16V, V
GS
= 0V
5.0
V
DS
= 16V, V
GS
= 0V, T
J
= 55C
Gate-to-Source Forward Leakage
100
V
GS
= 12V
Gate-to-Source Reverse Leakage
-100
V
GS
= -12V
Q
g
Total Gate Charge
18
27
I
D
= 6.0A
Q
gs
Gate-to-Source Charge
2.2
3.3
nC
V
DS
= 10V
Q
gd
Gate-to-Drain ("Miller") Charge
6.2
9.3
V
GS
= 4.5V, See Fig. 10
t
d(on)
Turn-On Delay Time
8.1
12
V
DD
= 10V
t
r
Rise Time
17
25
I
D
= 1.0A
t
d(off)
Turn-Off Delay Time
38
57
R
G
= 6.0
t
f
Fall Time
31
47
R
D
= 10
C
iss
Input Capacitance
900
V
GS
= 0V
C
oss
Output Capacitance
430
pF
V
DS
= 15V
C
rss
Reverse Transfer Capacitance
200
= 1.0MHz, See Fig. 9
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
GSS
A
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
IRF7311
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Typical Source-Drain Diode
Forward Voltage
1
10
100
0.1
1
10
20s PULSE WIDTH
T = 25 C
J
TOP
BOTTOM
VGS
7.50V
4.50V
4.00V
3.50V
3.00V
2.70V
2.00V
1.50V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
1.50V
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J
T = 150 C
J
1
10
100
0.1
1
10
20s PULSE WIDTH
T = 150 C
J
TOP
BOTTOM
VGS
7.50V
4.50V
4.00V
3.50V
3.00V
2.70V
2.00V
1.50V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
1.50V
1
10
100
1.5
2.0
2.5
3.0
V = 10V
20s PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J
T = 150 C
J
IRF7311
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
Fig 6. Typical On-Resistance Vs. Drain
Current
Fig 7. Typical On-Resistance Vs. Gate
Voltage
Fig 5. Normalized On-Resistance
Vs. Temperature
R
DS
(on) , Drain-to-Source On Resistance (
)
R
DS
(on) , Drain-to-Source On Resistance (
)
25
50
75
100
125
150
0
50
100
150
200
250
300
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
ID
TOP
BOTTOM
1.8A
3.3A
4.1A
-60 -40 -20
0
20
40
60
80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
V
=
I =
GS
D
4.5V
6.0A
0 . 0 1
0 . 0 2
0 . 0 3
0 . 0 4
0 . 0 5
0
2
4
6
8
A
G S
V , Gate-to-S ource V oltage (V)
I = 6.6A
D
0 . 0 2 0
0 . 0 2 4
0 . 0 2 8
0 . 0 3 2
0
1 0
2 0
3 0
A
I , Drain C urrent (A)
D
V = 4.5V
G S
V = 2.7V
G S
IRF7311
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
0
4 0 0
8 0 0
1 2 0 0
1 6 0 0
1
1 0
1 0 0
C
,
Cap
ac
i
t
a
n
c
e
(
p
F
)
D S
V , D rain-to-S ourc e V oltage (V )
A
V = 0V , f = 1 M H z
C = C + C , C S H O R TE D
C = C
C = C + C
G S
iss g s g d d s
rs s g d
o ss ds g d
C
is s
C
os s
C
rs s
0
5
10
15
20
25
30
0
2
4
6
8
10
Q , Total Gate Charge (nC)
-V , Gate-to-Source Voltage (V)
G
GS
I =
D
6.0A
V
= 10V
DS
0.1
1
10
100
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
0.50
SINGLE PULSE
(THERMAL RESPONSE)
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