HEXFET
Power MOSFET
PD - 9.1240C
8/25/97
l
Generation V Technology
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Ultra Low On-Resistance
l
Dual P-Channel Mosfet
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Surface Mount
l
Available in Tape & Reel
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Dynamic dv/dt Rating
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Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in an
application with dramatically reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques. Power dissipation of greater
than 0.8W is possible in a typical PCB mount application.
IRF7304
D 1
D 1
D 2
D 2
G 1
S 2
G 2
S 1
T o p V iew
8
1
2
3
4
5
6
7
S O -8
Parameter
Max.
Units
I
D
@ T
A
= 25C
10 Sec. Pulsed Drain Current, V
GS
@ -4.5V
-4.7
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ -4.5V
-4.3
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ -4.5V
-3.4
A
I
DM
Pulsed Drain Current
-17
P
D
@T
A
= 25C
Power Dissipation
2.0
Linear Derating Factor
0.016
V
GS
Gate-to-Source Voltage
12
V
dv/dt
Peak Diode Recovery dv/dt
-5.0
V/ns
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
C
Absolute Maximum Ratings
W
W/C
V
DSS
= -20V
R
DS(on)
= 0.090
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
R
JA
Maximum Junction-to-Ambient
62.5
C/W
IRF7304
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
-20
V
V
GS
= 0V, ID = -250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
-0.012
V/C
Reference to 25C, I
D
= -1mA
0.090
V
GS
= -4.5V, I
D
= -2.2A
0.140
V
GS
= -2.7V, I
D
= -1.8A
V
GS(th)
Gate Threshold Voltage
-0.70
V
V
DS
= V
GS
, I
D
= -250A
g
fs
Forward Transconductance
4.0
S
V
DS
= -16V, I
D
= -2.2A
-1.0
V
DS
= -16V, V
GS
= 0V
-25
V
DS
= -16V, V
GS
= 0V, T
J
= 125C
Gate-to-Source Forward Leakage
-100
V
GS
= -12V
Gate-to-Source Reverse Leakage
100
V
GS
= 12V
Q
g
Total Gate Charge
22
I
D
= -2.2A
Q
gs
Gate-to-Source Charge
3.3
nC
V
DS
= -16V
Q
gd
Gate-to-Drain ("Miller") Charge
9.0
V
GS
= -4.5V, See Fig. 6 and 12
t
d(on)
Turn-On Delay Time
8.4
V
DD
= -10V
t
r
Rise Time
26
I
D
= -2.2A
t
d(off)
Turn-Off Delay Time
51
R
G
= 6.0
t
f
Fall Time
33
R
D
= 4.5
,
See Fig. 10
Between lead tip
and center of die contact
C
iss
Input Capacitance
610
V
GS
= 0V
C
oss
Output Capacitance
310
pF
V
DS
= -15V
C
rss
Reverse Transfer Capacitance
170
= 1.0MHz, See Fig. 5
Notes:
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
-1.0
V
T
J
= 25C, I
S
= -1.8A, V
GS
= 0V
t
rr
Reverse Recovery Time
56
84
ns
T
J
= 25C, I
F
= -2.2A
Q
rr
Reverse RecoveryCharge
71
110
C
di/dt = 100A/s
t
on
Forward Turn-On Time
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
-2.2A, di/dt
-
50A/s, V
DD
V
(BR)DSS
,
T
J
150C
Pulse width
300s; duty cycle
2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
-17
-2.5
A
I
GSS
I
DSS
Drain-to-Source Leakage Current
L
S
Internal Source Inductance
6.0
L
D
Internal Drain Inductance
4.0
nH
ns
nA
A
R
DS(ON)
Static Drain-to-Source On-Resistance
S
D
G
S
D
G
IRF7304
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
0 . 1
1
1 0
1 0 0
0 . 0 1
0 . 1
1
1 0
1 0 0
D
D S
2 0 s PU LSE W I DTH
T = 25 C
A
-I
,
D
r
a
i
n
-
t
o
-S
o
u
rc
e
C
u
rre
n
t
(A
)
-V , Dra in -to -So urce Vo lta ge (V )
J
VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
-1 .5V
0 . 1
1
1 0
1 0 0
0 . 0 1
0 . 1
1
1 0
1 0 0
D
D S
2 0 s PU LSE W I DT H
T = 15 0C
A
-
I
,
D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t (
A
)
-V , D rain-to-S ou rce V olta ge (V )
J
VGS
TOP - 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
-1.5 V
0 . 1
1
1 0
1 0 0
1 . 5
2 . 0
2 . 5
3 . 0
3 . 5
4 . 0
4 . 5
5 . 0
T = 2 5 C
T = 1 5 0 C
J
J
G S
D
A
-
I
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
-V , Ga te -to -S o u rce V o lta g e (V )
V = - 15 V
2 0 s P U L S E W ID TH
D S
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0 1 2 0
1 4 0 1 6 0
J
T , Ju nction T em pe ra ture (C)
R
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
DS
(
o
n
)
(
N
or
m
a
l
i
z
ed
)
A
I = -3.6 A
D
V = -4. 5V
G S
IRF7304
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
5 0 0
1 0 0 0
1 5 0 0
1
1 0
1 0 0
C
,
C
a
p
a
c
i
t
a
nc
e (
p
F
)
A
D S
-V , D ra in-to-S ource V oltag e (V)
V = 0V, f = 1 MH z
C = C + C , C SH O R TE D
C = C
C = C + C
G S
iss gs gd d s
rs s gd
oss ds gd
C
is s
C
o s s
C
r s s
0
2
4
6
8
1 0
0
5
1 0
1 5
2 0
2 5
G
GS
A
FO R TES T C IR C U IT
SEE FIG U R E 1 2
-
V
, G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
Q , Tota l Ga te Ch arg e (nC )
I = -2 .2A
V = -1 6V
D
DS
0 . 1
1
1 0
1 0 0
0 . 3
0 . 6
0 . 9
1 . 2
1 . 5
T = 2 5C
T = 1 50 C
J
J
V = 0 V
G S
S D
SD
A
-
I
,
R
e
v
e
r
s
e D
r
ai
n C
u
r
r
ent
(
A
)
-V , So urce-to-Drai n Vo lta ge (V )
1
10
100
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
A
-V , Drain-to-Source Voltage (V)
-I , Drain Current (A)
I , Drain Current (A)
DS
D
1ms
10ms
IRF7304
+
-
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
-4.5 V
Pulse Width
1
s
Duty Factor
0.1 %
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Fig 10b. Switching Time Waveforms
R
D
V
GS
V
DD
R
G
D.U.T.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D =
t / t
2. Peak T = P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25
50
75
100
125
150
0.0
1.0
2.0
3.0
4.0
5.0
T , Case Temperature
( C)
-I , Drain Current (A)
C
D
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