HEXFET
Power MOSFET
PD - 9.1239D
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Generation V Technology
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Ultra Low On-Resistance
l
Dual N-Channel Mosfet
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Surface Mount
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Available in Tape & Reel
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Dynamic dv/dt Rating
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Fast Switching
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques. Power dissipation of greater than 0.8W
is possible in a typical PCB mount application.
IRF7303
S O -8
D1
D 1
D2
D 2
G 1
S 2
G 2
S 1
Top V iew
8
1
2
3
4
5
6
7
Parameter
Max.
Units
I
D
@ T
A
= 25C
10 Sec. Pulsed Drain Current, V
GS
@ 10V
5.3
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ 10V
4.9
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ 10V
3.9
I
DM
Pulsed Drain Current
20
P
D
@T
A
= 25C
Power Dissipation
2.0
W
Linear Derating Factor
0.016
W/C
V
GS
Gate-to-Source Voltage
20
V
dv/dt
Peak Diode Recovery dv/dt
5.0
V/ns
T
J,
T
STG
Junction and Storage Temperature Range
-55 to + 150
C
Absolute Maximum Ratings
A
V
DSS
= 30V
R
DS(on)
= 0.050
8/25/97
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
R
JA
Maximum Junction-to-Ambient
62.5
C/W
IRF7303
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
30
V
V
GS
= 0V, I
D
= 250A
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.032
V/C
Reference to 25C, I
D
= 1mA
0.050
V
GS
= 10V, I
D
= 2.4A
0.080
V
GS
= 4.5V, I
D
= 2.0A
V
GS(th)
Gate Threshold Voltage
1.0
V
V
DS
= V
GS
, I
D
= 250A
g
fs
Forward Transconductance
5.2
S
V
DS
= 15V, I
D
= 2.4A
1.0
V
DS
= 24V, V
GS
= 0V
25
V
DS
= 24V, V
GS
= 0V, T
J
= 125 C
Gate-to-Source Forward Leakage
100
V
GS
= 20V
Gate-to-Source Reverse Leakage
-100
V
GS
= - 20V
Q
g
Total Gate Charge
25
I
D
= 2.4A
Q
gs
Gate-to-Source Charge
2.9
nC
V
DS
= 24V
Q
gd
Gate-to-Drain ("Miller") Charge
7.9
V
GS
= 10V, See Fig. 6 and 12
t
d(on)
Turn-On Delay Time
6.8
V
DD
= 15V
t
r
Rise Time
21
I
D
= 2.4A
t
d(off)
Turn-Off Delay Time
22
R
G
= 6.0
t
f
Fall Time
7.7
R
D
= 6.2
,
See Fig. 10
Between lead tip
and center of die contact
C
iss
Input Capacitance
520
V
GS
= 0V
C
oss
Output Capacitance
180
pF
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
72
= 1.0MHz, See Fig. 5
Notes:
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
I
SM
Pulsed Source Current
integral reverse
(Body Diode)
p-n junction diode.
V
SD
Diode Forward Voltage
1.0
V
T
J
= 25C, I
S
= 1.8A, V
GS
= 0V
t
rr
Reverse Recovery Time
47
71
ns
T
J
= 25C, I
F
= 2.4A
Q
rr
Reverse RecoveryCharge
56
84
nC
di/dt = 100A/s
t
on
Forward Turn-On Time
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
2.4A, di/dt
73A/s, V
DD
V
(BR)DSS
,
T
J
150C
Pulse width
300s; duty cycle
2%.
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
20
2.5
A
S
D
G
I
GSS
I
DSS
Drain-to-Source Leakage Current
L
S
Internal Source Inductance
6.0
L
D
Internal Drain Inductance
4.0
nH
ns
nA
A
R
DS(ON)
Static Drain-to-Source On-Resistance
S
D
G
Surface mounted on FR-4 board, t
10sec.
IRF7303
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1
10
100
1000
0.1
1
10
100
I
, D
r
a
i
n
-
to
-
S
o
u
r
c
e
C
u
r
r
e
n
t (
A
)
D
V , D ra in-to-S ource V olta ge (V )
D S
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
20 s P UL SE W ID TH
T = 25C
A
4.5 V
J
1
10
100
1000
0.1
1
10
100
I
,
D
r
a
i
n
-
t
o
-
S
our
c
e
C
u
r
r
ent
(
A
)
D
V , Dra in -to-So urce V oltag e (V)
D S
VGS
TOP 15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
2 0 s PU L SE W ID TH
T = 1 50 C
A
4.5 V
J
1 0
1 0 0
4
5
6
7
8
9
1 0
T = 2 5 C
T = 15 0 C
J
J
G S
V , Ga te -to -S o u rce V o lta g e (V )
D
I
,
D
r
ai
n
-
t
o
-
S
ou
r
c
e
C
u
r
r
ent
(
A
)
A
V = 1 5 V
2 0 s PU L SE W ID T H
DS
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
- 6 0
- 4 0
- 2 0
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0 1 6 0
J
T , Jun ction Te mpe ratu re (C )
R
,
D
r
a
i
n
-
to
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
D
S
(
on)
(
N
or
m
a
l
i
z
ed)
V = 10 V
G S
A
I = 4 .0A
D
IRF7303
Fig 7. Typical Source-Drain Diode
Forward Voltage
Fig 8. Maximum Safe Operating Area
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
0
200
400
600
800
1000
1
10
100
C
,
C
a
pac
i
t
anc
e (
p
F
)
D S
V , D rain-to -S ou rce Volta ge (V )
A
V = 0 V, f = 1 MH z
C = C + C , C S HO R TED
C = C
C = C + C
G S
is s g s gd ds
rs s gd
os s ds gd
C
is s
C
o s s
C
rs s
0
4
8
12
16
20
0
5
10
15
20
25
Q , To tal Ga te Ch arg e (nC )
G
V
, G
a
te
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
GS
A
FO R TES T C IR CU I T
SEE FIG U R E 12
I = 2 .4A
V = 2 4V
D
DS
0 . 1
1
1 0
1 0 0
0 . 0
0 . 5
1 . 0
1 . 5
2 . 0
2 . 5
T = 25 C
T = 150 C
J
J
V = 0 V
G S
V , So urce-to-Dra in Vo ltage (V )
I
, R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
S D
SD
A
1
10
100
0.1
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25 C
J
A
V , Drain-to-Source Voltage (V)
I , Drain Current (A)
I , Drain Current (A)
DS
D
100us
1ms
10ms
IRF7303
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
Notes:
1. Duty factor D =
t / t
2. Peak T
= P
x Z
+ T
1
2
J
DM
thJA
A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response
(Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 10a. Switching Time Test Circuit
+
-
V
DS
90%
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
V
DS
10V
Pulse Width
1
s
Duty Factor
0.1 %
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
Fig 10b. Switching Time Waveforms
R
D
V
GS
V
DD
R
G
D.U.T.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
25
50
75
100
125
150
0.0
1.0
2.0
3.0
4.0
5.0
T , Case Temperature
( C)
I , Drain Current (A)
C
D
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