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N-Ch P-Ch

DSS

20V

-20V

DS(on)

0.125

0.20

3.0A

-2.5A

IRF7106

HEXFET

Power MOSFET

PD - 9.1098B

Advanced Process Technology
Ultra Low On-Resistance
Dual N and P Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching

Description

Fourth Generation HEXFETs from International Rectifier utilize advanced

processing techniques to achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized device
design for which HEXFET Power MOSFETs are well known, provides the designer

with an extremely efficient device for use in a wide variety of applications.

The SO-8 has been modified through a customized leadframe for enhanced

thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in an
application with dramatically reduced board space. The package is designed for

vapor phase, infra-red, or wave soldering techniques. Power dissipation of greater
than 0.8W is possible in a typical PCB mount application.

N-CHANNEL MOSFET

P-CHANNEL MOSFET

Top View

PRELIMINARY

Absolute Maximum Ratings

Parameter

Units

Max.

N-Channel

P-Channel

@ T

= 25°C

Continuous Drain Current, V

@ 10V

3.0

-2.5

@ T

= 70°C

Continuous Drain Current, V

@ 10V

2.5

-2.0

Pulsed Drain Current

-10

= 25°C

Power Dissipation

2.0

Linear Derating Factor

0.016

Gate-to-Source Voltage

± 20

dv/dt

Peak Diode Recovery dv/dt

3.0

-3.0

V/ns

STG

Junction and Storage Temperature Range

-55 to + 150

°C

W/°C

SO-8

Thermal Resistance

Parameter

Min.

Typ.

Max.

Units

Junction-to-Ambient (PCB Mount)**

62.5

°C/W

** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.

Revision 3

IRF7106

Parameter

Min. Typ. Max. Units

Conditions

N-Ch 20

= 0V, I

= 250µA

P-Ch -20

= 0V, I

= -250µA

N-Ch -- 0.037 --

Reference to 25°C, I

= 1mA

P-Ch -- -0.022 --

Reference to 25°C, I

= -1mA

-- 0.125

= 10V, I

= 1.0A

0.25

= 4.5V, I

= 0.50A

0.20

= -10V, I

= -1.0A

0.35

= -4.5V, I

= -0.50A

N-Ch 1.0

= V

, I

= 250µA

P-Ch -1.0

= V

, I

= -250µA

N-Ch --

4.4

= 15V, I

= 3.0A

P-Ch --

3.0

= -15V, I

= -3.0A

N-Ch --

2.0

= 16V, V

= 0V

P-Ch --

-2.0

= -16V, V

= 0V

N-Ch --

= 16V, V

= 0V, T

= 125°C

P-Ch --

-25

= -16V, V

= 0V, T

= 125°C

GSS

Gate-to-Source Forward Leakage

N-P

-- ±100 nA

= ± 20V

N-Ch --

9.1

P-Ch --

N-Ch --

1.2

P-Ch --

1.6

N-Ch --

2.5

P-Ch --

3.5

N-Ch --

5.0

P-Ch --

N-Ch --

P-Ch --

N-Ch --

P-Ch --

N-Ch --

P-Ch --

Internal Drain Inductace

N-P

4.0

Between lead tip

Internal Source Inductance

N-P

6.0

and center of die contact

N-Ch --

300

P-Ch --

280

N-Ch --

260

P-Ch --

250

N-Ch --

P-Ch --

Parameter

Min. Typ. Max. Units

Conditions

N-Ch --

1.7

P-Ch --

-1.6

N-Ch --

P-Ch --

-10

N-Ch --

0.90 1.2

= 25°C, I

= 1.6A, V

= 0V

P-Ch -- -0.90 -1.6

= 25°C, I

= -1.3A, V

= 0V

N-Ch --

100

P-Ch --

100

N-Ch --

120

P-Ch --

180

Forward Turn-On Time

N-P

(BR)DSS

Drain-to-Source Breakdown Voltage

(BR)DSS

Breakdown Voltage Temp. Coefficient

DS(ON)

Static Drain-to-Source On-Resistance

GS(th)

Gate Threshold Voltage

Forward Transconductance

DSS

Drain-to-Source Leakage Current

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

d(on)

Turn-On Delay Time

Rise Time

d(off)

Turn-Off Delay Time

Fall Time

iss

Imput Capacitance

oss

Output Capacitance

rss

Reverse Transfer Capacitance

Electrical Characteristics @ T

= 25°C (unless otherwise specified)

Source-Drain Ratings and Characteristics

V/°C

µA

N-Channel
I

= 2.3A, V

= 10V, V

= 10V

P-Channel
I

= -2.3A, V

= -10V, V

= -10V

N-Channel
V

= 20V, I

= 1.0A, R

= 6.0

= 20

P-Channel
V

= -20V, I

= -1.0A, R

= 6.0

= 20

N-Channel
V

= 0V, V

= 15V, = 1.0MHz

P-Channel
V

= 0V, V

= -15V, = 1.0MHz

N-Ch

P-Ch

Continuous Source Current (Body Diode)

Pulsed Source Current (Body Diode)

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

N-Channel
T

= 25°C, I

= 1.25A, di/dt = 100A/µs

P-Channel
T

= 25°C, I

= -1.25A, di/dt = 100A/µs

Intrinsic turn-on time is neglegible (turn-on is dominated by L

)

N-Channel I

2.3A, di/dt

100A/µs, V

(BR)DSS

, T

150°C

P-Channel I

-2.3A, di/dt

50A/µs, V

(BR)DSS

, T

150°C

Pulse width

300µs; duty cycle

2%.

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 23 )

Notes:

IRF7106

Fig 1. Typical Output Characteristics,

= 25

Fig 2. Typical Output Characteristics,

= 150

0.1

100

0.01

0.1

100

I

,

D

r
a
i
n
-
t
o
-
S

o
u
r
c
e

C

u
r
r
e
n
t

(
A

)

V , Drain-to-Source Voltage (V)

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

20µs PULSE WIDTH
T = 150°C

4.5V

0.1

100

0.01

0.1

100

I

,

D

r
a
i
n
-
t
o
-
S

o
u
r
c
e

C

u
r
r
e
n
t

(
A

)

V , Drain-to-Source Voltage (V)

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

20µs PULSE WIDTH
T = 25°C

4.5V

Q , Total Gate Charge (nC)

,

G

a
t
e
-
t
o
-
S

o
u
r
c
e

V

o
l
t
a
g
e

(
V

)

I = 2.3A
V = 10V

D
DS

FOR TEST CIRCUIT
SEE FIGURE 11

200

400

600

800

100

,

C

a
p
a
c
i
t
a
n
c
e

(
p
F

)

V , Drain-to-Source Voltage (V)

V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C

GS
iss gs gd ds
rss gd
oss ds gd

iss

oss

rss

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

T = 25°C

T = 150°C

V , Gate-to-Source Voltage (V)

I

,

D

r
a

i
n

-
t
o

-
S

r
c
e

r
r
e

t

(
A

)

V = 15V
20µs PULSE WIDTH

0.0

0.5

1.0

1.5

2.0

-60 -40 -20

100 120 140 160

T , Junction Temperature (°C)

,

D

r
a
i
n
-
t
o
-
S

o
u
r
c
e

O

n

R

e
s
i
s
t
a
n
c
e

(
o
n

)

(
N

o
r
m

a
l
i
z
e
d
)

V = 10V

I = 3.0A

Fig 4. Normalized On-Resistance

Vs. Temperature

Fig 3. Typical Transfer Characteristics

N-Channel

IRF7106

0.1

100

0.4

0.6

0.8

1.0

1.2

1.4

T = 25°C

T = 150°C

V = 0V

V , Source-to-Drain Voltage (V)

I

,

R

e
v
e
r
s
e

D

r
a
i
n

C

u
r
r
e
n
t

(
A

)

0.1

100

0.1

100

V , Drain-to-Source Voltage (V)

I

,

D

r
a
i
n

C

u
r
r
e
n
t

(
A

)

OPERATION IN THIS AREA LIMITED
BY R

DS(on)

T = 25°C
T = 150°C
Single Pulse

1ms

10ms

100ms

A
J

Fig 7. Typical Source-Drain Diode

Forward Voltage

Fig 8. Maximum Safe Operating Area

Fig 9. Maximum Drain Current Vs.

Ambient Temperature

0.0

0.5

1.0

1.5

2.0

2.5

3.0

100

125

150

I

,

D

r
a
i
n

C

u
r
r
e
n
t

(
A

p
s
)

T , Ambient Temperature (°C)

N-Channel

Fig 11a. Gate Charge Test Circuit

Fig 11b. Basic Gate Charge Waveform

Fig 10b. Switching Time Waveforms

Fig 10a. Switching Time Test Circuit

IRF7106

0.1

100

0.1

100

-
I

,

D

r
a
i
n
-
t
o
-
S

o
u
r
c
e

C

u
r
r
e
n
t

(
A

)

-V , Drain-to-Source Voltage (V)

VGS

TOP - 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V

BOTTOM - 4.5V

-4.5V

20µs PULSE WIDTH
T = 25°C

0.1

100

0.1

100

20µs PULSE WIDTH
T = 150°C

-
I

,

D

r
a
i
n
-
t
o
-
S

o
u
r
c
e

C

u
r
r
e
n
t

(
A

)

-V , Drain-to-Source Voltage (V)

VGS

TOP - 15V

- 10V

- 8.0V

- 7.0V

- 6.0V

- 5.5V

- 5.0V

BOTTOM - 4.5V

-4.5V

Fig 12. Typical Output Characteristics,

= 25

Fig 13. Typical Output Characteristics,

= 150

100

T = 25°C

T = 150°C

-
I

,

D

r
a

i
n

-
t
o

-
S

r
c
e

r
r
e

t

(
A

)

-V , Gate-to-Source Voltage (V)

V = -15V
20µs PULSE WIDTH

0.0

0.5

1.0

1.5

2.0

-60 -40 -20

100 120 140 160

T , Junction Temperature (°C)

,

D

r
a
i
n
-
t
o
-
S

o
u
r
c
e

O

n

R

e
s
i
s
t
a
n
c
e

(
o
n
)

(
N

o
r
m

a
l
i
z
e
d
)

V = -10V

I = -2.5A

Fig 15. Normalized On-Resistance

Vs. Temperature

Fig 14. Typical Transfer Characteristics

Fig 16. Typical Capacitance Vs.

Drain-to-Source Voltage

200

400

600

800

100

,

C

a
p
a
c
i
t
a
n
c
e

(
p
F

)

-V , Drain-to-Source Voltage (V)

V = 0V, f = 1MHz
C = C + C , C SHORTED
C = C
C = C + C

GS
iss gs gd ds
rss gd
oss ds gd

iss

oss

rss

Fig 17. Typical Gate Charge Vs.

Gate-to-Source Voltage

-
V

,

G

t
e
-
t
o
-
S

o
u
r
c
e

o
l
t
a
g

e

(
V

)

Q , Total Gate Charge (nC)

I = -2.3A
V = -10V

D
DS

FOR TEST CIRCUIT
SEE FIGURE 22

P-Channel

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ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: IRF7106