www.docs.chipfind.ru
www.irf.com
1
10/11/04
IRF6665
Notes
through
are on page 2
PD - 96900
DirectFET
ISOMETRIC
SH
Applicable DirectFET Outline and Substrate Outline (see p. 6, 7 for details)
DIGITAL AUDIO MOSFET
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing
techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate
resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI.
The IRF6665 device utilizes DirectFET TM packaging technology. DirectFET TM packaging technology offers lower parasitic inductance and
resistance when compared to conventional wirebonded SOIC packaging. Lower inductance improves EMI performance by reducing the voltage
ringing that accompanies fast current transients. The DirectFET TM package is compatible with existing layout geometries used in power
applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is
followed regarding the manufacturing method and processes. The DirectFET TM package also allows dual sided cooling to maximize thermal
transfer in power systems, improving thermal resistance and power dissipation. These features combine to make this MOSFET a highly efficient,
robust and reliable device for Class-D audio amplifier applications.
Features
Latest MOSFET Silicon technology
Key parameters optimized for Class-D audio amplifier applications
Low R
DS(on)
for improved efficiency
Low Q
g
for better THD and improved efficiency
Low Q
rr
for better THD and lower EMI
Low package stray inductance for reduced ringing and lower EMI
Can deliver up to 100W per channel into 8 with no heatsink
Dual sided cooling compatible
Compatible with existing surface mount technologies
Lead and Bromide Free
Absolute Maximum Ratings
Parameter
Units
V
DS
Drain-to-Source Voltage
V
V
GS
Gate-to-Source Voltage
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ 10V
A
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
c
P
D
@T
C
= 25C
Maximum Power Dissipation
W
P
D
@T
A
= 25C
Power Dissipation
e
P
D
@T
A
= 70C
Power Dissipation
e
Linear Derating Factor
W/C
T
J
Operating Junction and
C
T
STG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
R
JA
Junction-to-Ambient
ek
58
C/W
R
JA
Junction-to-Ambient
hk
12.5
R
JA
Junction-to-Ambient
ik
20
R
JC
Junction-to-Case
jk
3.0
R
J-PCB
Junction-to-PCB Mounted
1.4
42
Max.
4.2
3.4
34
100
20
19
-40 to + 150
0.017
2.2
1.4
V
DS
100
V
R
DS(on)
typ. @ V
GS
= 10V
53
m
:
Q
g
typ.
8.7
nC
R
G(int)
typ.
1.9
Key Parameters
SQ
SX
ST
SH
MQ
MX
MT
MN
IRF6665
2
www.irf.com
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25C, L = 0.89mH, R
G
= 25
, I
AS
= 5.0A.
Surface mounted on 1 in. square Cu board.
Pulse width
400s; duty cycle 2%.
C
oss
eff. is a fixed capacitance that gives the same
charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with
metalized back and with small clip heatsink.
T
C
measured with thermal couple mounted to top
(Drain) of part.
R
is measured at T
J
of approximately 90C.
Based on testing done using a typical device & evaluation board
at Vbus=45V, f
SW
=400KHz, and T
A
=25C. The delta case
temperature
T
C
is 55C.
Static @ T
J
= 25C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage
100
V
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
0.12
V/C
R
DS(on)
Static Drain-to-Source On-Resistance
53
62
m
V
GS(th)
Gate Threshold Voltage
3.0
5.0
V
I
DSS
Drain-to-Source Leakage Current
20
A
250
I
GSS
Gate-to-Source Forward Leakage
100
nA
Gate-to-Source Reverse Leakage
-100
R
G(int)
Internal Gate Resistance
1.9
2.9
Dynamic @ T
J
= 25C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
gfs
Forward Transconductance
6.6
S
Q
g
Total Gate Charge
8.7
11.7
V
DS
= 50V
Q
gs1
Pre-Vth Gate-to-Source Charge
2.1
V
GS
= 10V
Q
gs2
Post-Vth Gate-to-Source Charge
0.58
I
D
= 5.0A
Q
gd
Gate-to-Drain Charge
2.8
nC
See Fig.6 and 16
Q
godr
Gate Charge Overdrive
3.2
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
3.38
t
d(on)
Turn-On Delay Time
7.4
t
r
Rise Time
2.8
t
d(off)
Turn-Off Delay Time
14
ns
t
f
Fall Time
4.3
C
iss
Input Capacitance
530
C
oss
Output Capacitance
110
C
rss
Reverse Transfer Capacitance
29
pF
C
oss
Output Capacitance
510
C
oss
Output Capacitance
67
C
oss
eff.
Effective Output Capacitance
130
Avalanche Characteristics
Parameter
Units
E
AS
Single Pulse Avalanche Energy
d
mJ
I
AR
Avalanche Current
A
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
I
S
Continuous Source Current
4.2
(Body Diode)
A
I
SM
Pulsed Source Current
34
(Body Diode)
V
SD
Diode Forward Voltage
1.3
V
t
rr
Reverse Recovery Time
31
ns
Q
rr
Reverse Recovery Charge
37
nC
V
GS
= 20V
Max.
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 80V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V
g
V
DD
= 50V
I
D
= 5.0A
R
G
= 6.0
V
GS
= -20V
T
J
= 25C, I
S
= 5.0A, V
GS
= 0V
f
T
J
= 25C, I
F
= 5.0A, V
DD
= 25V
di/dt = 100A/s
f
Conditions
V
GS
= 0V, I
D
= 250A
Reference to 25C, I
D
= 1mA
V
GS
= 10V, I
D
= 5.0A
f
V
DS
= V
GS
, I
D
= 250A
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 125C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Conditions
V
GS
= 10V
f
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
11
5.0
Typ.
Conditions
V
DS
= 10V, I
D
= 5.0A
IRF6665
www.irf.com
3
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (C)
0.5
1.0
1.5
2.0
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
ID = 5.0A
VGS = 10V
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
2
4
6
8
10
12
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
)
TJ = -40C
TJ = 25C
TJ = 150C
VDS = 25V
60s PULSE WIDTH
0
2
4
6
8
10
QG Total Gate Charge (nC)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
VDS= 80V
VDS= 50V
VDS= 20V
ID= 5.0A
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP 15V
10V
9.0V
8.0V
7.0V
BOTTOM
6.0V
60s PULSE WIDTH
Tj = 25C
6.0V
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
6.0V
60s PULSE WIDTH
Tj = 150C
VGS
TOP 15V
10V
9.0V
8.0V
7.0V
BOTTOM
6.0V
IRF6665
4
www.irf.com
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
1
10
100
I S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
TJ = -40C
TJ = 25C
TJ = 150C
VGS = 0V
25
50
75
100
125
150
TC , Case Temperature (C)
0
1
2
3
4
5
I D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
100
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
A
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
Ri (C/W)
i (sec)
1.6195 0.000126
2.1406 0.001354
22.2887 0.375850
20.0457 7.410000
11.9144 99
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci=
i/Ri
Ci=
i/Ri
C
4
4
R
4
R
4
5
5
R
5
R
5
0
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0.01
0.1
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
Tc = 25C
Tj = 150C
Single Pulse
100sec
1msec
10msec
DC
-75
-50
-25
0
25
50
75
100 125 150
TJ , Temperature ( C )
2.5
3.0
3.5
4.0
4.5
5.0
5.5
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
ID = 250A
ID = 1.0mA
ID = 1.0A
IRF6665
www.irf.com
5
Fig 14c. Maximum Avalanche Energy vs. Drain Current
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
V
GS
V
DS
90%
10%
t
d(on)
t
d(off)
t
r
t
f
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
RG
IAS
0.01
tp
D.U.T
L
VDS
+
- VDD
DRIVER
A
15V
20V
V
GS
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. On-Resistance vs. Drain Current
V
DS
Pulse Width 1 s
Duty Factor 0.1 %
R
D
V
GS
R
G
D.U.T.
10V
+
- V
DD
4
6
8
10
12
14
16
18
VGS, Gate -to -Source Voltage (V)
0
20
40
60
80
100
120
140
160
180
200
R
D
S
(
o
n
),
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(m
)
ID = 5.0A
TJ = 125C
TJ = 25C
25
50
75
100
125
150
Starting TJ , Junction Temperature (C)
0
10
20
30
40
50
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
ID
TOP 0.86A
1.3A
BOTTOM 5.0A
0
2
4
6
8
10
ID, Drain Current (A)
40
60
80
100
120
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(m
)
TJ = 25C
TJ = 125C
Vgs = 10V
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