Control Fet
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1
07/11/06
IRF6629PbF
IRF6629TRPbF
DirectFET
Power MOSFET
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
T
C
measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25C, L = 4.4mH, R
G
= 25
, I
AS
= 23A.
Notes:
PD - 97235
Description
The IRF6629PbF combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows
dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6629PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6629PbF has been optimized for parameters that are critical in synchronous buck
including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6629PbF offers particularly low Rds(on) and high Cdv/dt
immunity for synchronous FET applications.
SQ
SX
ST
MQ
MX
MT
MP
0
10
20
30
40
QG Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
VDS= 20V
VDS= 13V
VDS= 5.0V
ID= 23A
Absolute Maximum Ratings
Parameter
Units
V
DS
Drain-to-Source Voltage
V
V
GS
Gate-to-Source Voltage
I
D
@ T
A
= 25C
Continuous Drain Current, V
GS
@ 10V
e
I
D
@ T
A
= 70C
Continuous Drain Current, V
GS
@ 10V
e
A
I
D
@ T
C
= 25C
Continuous Drain Current, V
GS
@ 10V
f
I
DM
Pulsed Drain Current
g
E
AS
Single Pulse Avalanche Energy
h
mJ
I
AR
Avalanche Current
g
A
23
Max.
23
180
230
20
25
29
1170
l
RoHs Compliant
l
Lead-Free (Qualified up to 260C Reflow)
l
Application Specific MOSFETs
l
Ideal for CPU Core DC-DC Converters
l
Low Conduction Losses
l
High Cdv/dt Immunity
l
Low Profile (<0.7mm)
l
Dual Sided Cooling Compatible
l
Compatible with existing Surface Mount Techniques
2
4
6
8
10
12
14
16
VGS, Gate -to -Source Voltage (V)
0
1
2
3
4
5
6
7
8
T
y
p
i
c
a
l
R
D
S
(
o
n
)
(
m
)
ID = 29A
TJ = 25C
TJ = 125C
DirectFET
ISOMETRIC
MX
Typical values (unless otherwise specified)
V
DSS
V
GS
R
DS(on)
R
DS(on)
25V max 20V max 1.6m
@ 10V 2.1m@ 4.5V
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
34nC
11nC
4.2nC
27nC
23nC
1.8V
IRF6629PbF
2
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Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width
400s; duty cycle 2%.
Static @ T
J
= 25C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage
25
V
V
DSS
/
T
J
Breakdown Voltage Temp. Coefficient
17
mV/C
R
DS(on)
Static Drain-to-Source On-Resistance
1.6
2.1
m
2.1
2.7
V
GS(th)
Gate Threshold Voltage
1.35
1.8
2.35
V
V
GS(th)
/
T
J
Gate Threshold Voltage Coefficient
-6.2
mV/C
I
DSS
Drain-to-Source Leakage Current
1.0
A
150
I
GSS
Gate-to-Source Forward Leakage
100
nA
Gate-to-Source Reverse Leakage
-100
gfs
Forward Transconductance
150
S
Q
g
Total Gate Charge
34
51
Q
gs1
Pre-Vth Gate-to-Source Charge
7.8
Q
gs2
Post-Vth Gate-to-Source Charge
4.2
nC
Q
gd
Gate-to-Drain Charge
11
Q
godr
Gate Charge Overdrive
11
See Fig. 15
Q
sw
Switch Charge (Q
gs2
+ Q
gd
)
15
Q
oss
Output Charge
23
nC
R
G
Gate Resistance
1.3
3.2
t
d(on)
Turn-On Delay Time
20
t
r
Rise Time
67
t
d(off)
Turn-Off Delay Time
20
ns
t
f
Fall Time
7.4
C
iss
Input Capacitance
4260
C
oss
Output Capacitance
1130
pF
C
rss
Reverse Transfer Capacitance
550
Diode Characteristics
Parameter
Min. Typ. Max. Units
I
S
Continuous Source Current
3.5
(Body Diode)
A
I
SM
Pulsed Source Current
230
(Body Diode)
g
V
SD
Diode Forward Voltage
1.0
V
t
rr
Reverse Recovery Time
22
33
ns
Q
rr
Reverse Recovery Charge
27
41
nC
MOSFET symbol
Clamped Inductive Load
V
DS
= 15V, I
D
= 23A
Conditions
See Fig. 17
= 1.0MHz
V
DS
= 16V, V
GS
= 0V
V
GS
= 20V
V
GS
= -20V
V
DS
= 20V, V
GS
= 0V
V
DS
= 13V
V
DS
= 20V, V
GS
= 0V, T
J
= 125C
Conditions
V
GS
= 0V, I
D
= 250A
Reference to 25C, I
D
= 1mA
V
GS
= 10V, I
D
= 29A
i
V
GS
= 4.5V, I
D
= 23A
i
V
DS
= V
GS
, I
D
= 100A
T
J
= 25C, I
F
= 23A
V
GS
= 4.5V
I
D
= 23A
V
GS
= 0V
V
DS
= 13V
I
D
= 23A
V
DD
= 13V, V
GS
= 4.5V
i
di/dt = 220A/s
i See Fig. 18
T
J
= 25C, I
S
= 23A, V
GS
= 0V
i
showing the
integral reverse
p-n junction diode.
IRF6629PbF
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3
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
10
100
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
A
)
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
Ri (C/W)
i (sec)
7.628 0.069875
20.661 1.140300
16.718 39.9
J
J
1
1
2
2
3
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci=
i/Ri
Ci=
i/Ri
A
A
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Notes:
R
is measured at
T
J
of approximately 90C.
Surface mounted on 1 in. square Cu
(still air).
Mounted to a PCB with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
Absolute Maximum Ratings
Parameter
Units
P
D
@T
A
= 25C
Power Dissipation
e
W
P
D
@T
A
= 70C
Power Dissipation
e
P
D
@T
C
= 25C
Power Dissipation
f
T
P
Peak Soldering Temperature
C
T
J
Operating Junction and
T
STG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
R
JA
Junction-to-Ambient
em
45
R
JA
Junction-to-Ambient
km
12.5
R
JA
Junction-to-Ambient
lm
20
C/W
R
JC
Junction-to-Case
fm
1.2
R
J-PCB
Junction-to-PCB Mounted
1.0
Linear Derating Factor
e
W/C
1.8
0.022
270
-40 to + 150
Max.
100
2.8
IRF6629PbF
4
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Fig 5. Typical Output Characteristics
Fig 4. Typical Output Characteristics
Fig 6. Typical Transfer Characteristics
Fig 7. Normalized On-Resistance vs. Temperature
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Typical On-Resistance vs.
Drain Current and Gate Voltage
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
VGS
TOP
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
BOTTOM
2.5V
60s PULSE WIDTH
Tj = 25C
2.5V
0.1
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
2.5V
60s PULSE WIDTH
Tj = 150C
VGS
TOP 10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
BOTTOM
2.5V
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Junction Temperature (C)
0.6
0.8
1.0
1.2
1.4
1.6
T
y
p
i
c
a
l
R
D
S
(
o
n
)
(
N
o
r
m
a
l
i
z
e
d
)
ID = 29A
VGS = 10V
VGS = 4.5V
1
10
100
VDS, Drain-to-Source Voltage (V)
100
1000
10000
100000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
1
2
3
4
VGS, Gate-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
TJ = 150C
TJ = 25C
TJ = -40C
VDS = 15V
60s PULSE WIDTH
0
20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
0
2
4
6
8
10
T
y
p
i
c
a
l
R
D
S
(
o
n
)
(
m
)
TJ = 25C
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
IRF6629PbF
www.irf.com
5
Fig 13. Typical Threshold Voltage vs. Junction
Temperature
Fig 12. Maximum Drain Current vs. Case Temperature
Fig 10. Typical Source-Drain Diode Forward Voltage
Fig 11. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy vs. Drain Current
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, Source-to-Drain Voltage (V)
1
10
100
1000
I S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
TJ = 150C
TJ = 25C
TJ = -40C
VGS = 0V
25
50
75
100
125
150
TC , Case Temperature (C)
0
20
40
60
80
100
120
140
160
180
200
I D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( C )
0.5
1.0
1.5
2.0
2.5
3.0
T
y
p
i
c
a
l
V G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
ID = 100A
ID = 250A
ID = 1.0mA
ID = 1.0A
25
50
75
100
125
150
Starting TJ , Junction Temperature (C)
0
1000
2000
3000
4000
5000
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
ID
TOP 0.71A
1.2A
BOTTOM 23A
0.01
0.10
1.00
10.00
100.00
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
I D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
OPERATION IN THIS AREA
LIMITED BY RDS(on)
TA = 25C
TJ = 150C
Single Pulse
100sec
1msec
10msec
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